1.
Opt Express
; 23(10): 12732-9, 2015 May 18.
Article
in English
| MEDLINE
| ID: mdl-26074527
ABSTRACT
We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift of three time the cavity linewidth for the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the GaAs band edge. The probe transmission is modified by nearly 30% for an estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.