Physical properties of a generalized model of multilayer adsorption of dimers.

We investigate the transport properties of a complex porous structure with branched fractal architectures formed due to the gradual deposition of dimers in a model of multilayer adsorption. We thoroughly study the interplay between the orientational anisotropy parameter p_{0} of deposited dimers and the formation of porous structures, as well as its impact on the conductivity of the system, through extensive numerical simulations. By systematically varying the value of p_{0}, several critical and off-critical scaling relations characterizing the behavior of the system are examined. The results demonstrate that the degree of orientational anisotropy of dimers plays a significant role in determining the structural and physical characteristics of the system. We find that the Einstein relation relating to the size scaling of the electrical conductance holds true only in the limiting case of p_{0}→1. Monitoring the fractal dimension of the interface of the multilayer formation for various p_{0} values, we reveal that in a wide range of p_{0}>0.2 interface shows the characteristic of a self-avoiding random walk, compared to the limiting case of p_{0}→0 where it is characterized by the fractal dimension of the backbone of ordinary percolation cluster at criticality. Our results thus can provide useful information about the fundamental mechanisms underlying the formation and behavior of wide varieties of amorphous and disordered systems that are of paramount importance both in science and technology as well as in environmental studies.

Transport properties in multilayer adsorption of dimers.

In this paper, we study the transport properties (percolation and conductivity) of a two-dimensional structure created by depositing dimers on a one-dimensional substrate where multilayer deposition is allowed. Specifically, we are interested in studying how the mentioned properties vary as a function of the height of the multilayer. The critical parameters of the percolation transition are calculated using finite-size scaling analysis, obtaining the scaling laws for the probability of percolation and the conductivity of the system. To calculate the electrical conductivity of the multilayer, we use the Frank-Lobb algorithm.

Precise dose evaluation using a commercial phototransistor as a radiation detector.

An experimental arrangement and a circuitry based on an NPN phototransistor-type silicon radiation detector have been used for evaluating the X-ray beam dose in the diagnostic range. The circuitry was built to allow alteration of the electric field in the phototransistor internal structure, with some devices that have an available base connection. By changing the transistor base bias it is possible to alter its operation point to obtain a response gain from the selected photon energy range. In this way we have made an electronic energy-domain discretisation and we are investigating a model to calculate the dose contribution from each energy discretised into 10 keV steps. The method has been tested in filtered radiation beams generated from an HF-160 Pantak X-ray unit and compared with the usual dosimetry method. Our results have demonstrated that it is possible to make such a dose deconvolution from 40 to 140 keV energies by controlling the phototransistor base bias properly.

Filtered X ray beam dosimetry from 10(-3) to 10(2) Gy dose range by using phototransistors.

Low-cost, commercially available phototransistor-type semiconductor devices have been tested for monitoring filtered X ray beam dose. A Pantak X-ray unit was used to generate aluminium filtered X ray beams from 60 to 120 kV potentials. The analysis of the radiation detection behaviour as a function of the X ray tube parameters (peak kilovoltage and electrical current) are presented. The changes of the phototransistor electronic parameters have been evaluated and the results indicate that phototransistors can be used as X ray detectors for dose estimation in two different ways: electrical current read-out from 1 to 100 mGy dose range, and the changing of the radiation detection sensitivity in the dose range from 0.1 to 100 Gy. In addition, the devices show high reliability with no sign of substantial performance degradation with use and, in certain dose ranges, the cumulative dose evaluations could be performed up to 10,000 times with no need for re-calibration.