Entropy-Driven Self-Healing of Metal Oxides Assisted by Polymer-Inorganic Hybrid Materials.

Enabling self-healing of materials is crucially important for saving resources and energy in numerous emerging applications. While strategies for the self-healing of polymers are advanced, mechanisms for semiconducting inorganic materials are scarce due to the lack of suitable healing agents. Here a concept for the self-healing of metal oxides is developed. This concept consists of metal oxide nanoparticle growth inside the bulk of halogenated polymers and their subsequent entropy-driven migration to externally induced defect sites, leading to recovery of the defect. Herein, it is demonstrated that the pool of self-healing materials is expanded to include semiconductors, thereby increasing the reliability and sustainability of functional materials through the use of metal oxides. It is revealed that electrical properties of tin-doped indium oxide can be partially restored upon healing. Such properties are of immediate interest for the further development of transparent flexible electrodes.

Radical-triggered cross-linking for molecular layer deposition of SiAlCOH hybrid thin films.

Here, we report on a simultaneous growth and radical-initiated cross-linking of a hybrid thin film in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited a self-limiting MLD growth behavior and improved properties like 12% higher film density and enhanced stability compared to the non-cross-linked film.

Omniphobic Etched Aluminum Surfaces with Anti-Icing Ability.

In this work, omniphobic surfaces are developed by combining chemical etching and surface modification of aluminum. In the first step, hierarchical micro/nanostructuring is carried out by chemical etching. Thereafter, a perfluoropolyether is grafted onto the corrugated aluminum substrate, decreasing its surface free energy and turning the system omniphobic. The morphology and chemical composition of the developed surfaces are characterized. We observed a low affinity toward liquids, regardless of their chemical nature and surface tension. The surface shows superhydrophobic properties with a water contact angle of 160° and simultaneously strong oleophobic properties with a hexadecane contact angle of 141°. Furthermore, these omniphobic surfaces significantly delay the freezing time of water droplets to 5100 s, which is about 20-fold of the freezing time on pristine aluminum (260 s), and they even inhibit ice growth by repelling the incoming droplets prior to ice nucleation.

Molecular layer deposition of hybrid siloxane thin films by ring opening of cyclic trisiloxane (V3D3) and azasilane.

In this work, we report the first ring opening vapor to solid polymerization of cyclotrisiloxane and N-methyl-aza-2,2,4-trimethylsilacyclopentane by molecular layer deposition (MLD). This process was studied in situ with a quartz crystal microbalance and the thin film was characterized by X-ray photoelectron spectroscopy, ATR-FTIR and high-resolution transmission electron microscopy.

'Sandwich'-like hybrid ZnO thin films produced by a combination of atomic layer deposition and wet-chemistry using a mercapto silane as single organic precursor.

This study describes a straightforward preparation of hybrid organic-inorganic thin films containing a stable 'sandwich'-like structure of two atomic layer deposited (ALD) ZnO layers separated by a thin organosilane phase, which is built from a single organic component (3-mercaptopropyl)trimethoxysilane (MPTMS). Grafting of MPTMS on the first ALD ZnO layer was performed in solution and driven by the strong affinity of the terminal thiol functionality (-SH) towards ZnO. We demonstrate that under different reaction conditions, either MPTMS monolayers are prepared or a 5 nm thick cross-linked polymeric network is formed due to the self-condensation of silane, which covers the ALD ZnO surface. This film served as a soft template for the nucleation of an ALD ZnO top layer by creation of S-Zn and Si-O-Zn bonds at the upper interface, as confirmed by XPS measurements. An increase in surface roughness, as compared to the initial ZnO film, is observed after removal of the organic layer from the hybrid structure by calcination, which is accompanied by an improvement in UVA photocatalytic activity towards the degradation of methyl orange dye. Thus, MPTMS can be used as a sacrificial agent in combination with low temperature ALD processes for building rougher and photocatalytically efficient ZnO coatings.

Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices.

The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al2O3, Si3N4, SiC matrices by self-assembled growth was studied. The materials were produced by magnetron sputtering deposition, using different substrate temperatures. The deposition regimes leading to the self-assembled growth type and the formation of three-dimensionally ordered Ge QD lattices in different matrices were investigated and determined. The oxidation of the Ge QDs in different matrices was monitored and the best conditions for the production of non-oxidized Ge QDs were found. The optical properties of the Ge QD lattices in different matrices show a strong dependence on the Ge oxidation and the matrix type.

Introducing the concept of pulsed vapor phase copper-free surface click-chemistry using the ALD technique.

We report for the first time on a pulsed vapor phase copper-free azide-alkyne click reaction on ZnO by using the atomic layer deposition (ALD) process technology. This reproducible and fast method is based on an in situ two-step reaction consisting of sequential exposures of ZnO to propiolic acid and benzyl azide.

Ta2N3 nanocrystals grown in Al2O3 thin layers.

Tantalum nitride nanoparticles (NPs) and cubic bixbyite-type Ta2N3 nanocrystals (NCs) were grown in (Ta-N+Al2O3)/Al2O3 periodic multilayers (MLs) after thermal treatment. The MLs were prepared by magnetron deposition at room temperature and characterized using grazing incidence small-angle X-ray scattering (GISAXS), X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). We found amorphous tantalum nitride NPs at 600-800 °C, with a high degree of ordering along the surface normal and short-range ordering within the layers containing tantalum (metallic layers). At an even higher annealing temperature of 900 °C the NPs crystallize in the rare and relatively unexplored Ta2N3 phase. However, the environment, morphology and spatial ordering of the NCs depend on the thickness of the metallic layers. For 12 nm thick metallic layers, the Ta2N3 NCs have an average diameter of 6 nm and they are confined and short-range ordered within the metallic layers. When the metallic layers are thinner, the NCs grow over 20 nm in diameter, show no spatial ordering, while the periodic structure of the ML was completely destroyed. The results presented here demonstrate a self-assembly process of tantalum nitride NPs, the morphological properties of which depend on the preparation conditions. This can be used as a generic procedure to realize highly tunable and designable optical properties of thin films containing transition-metal nitride nanocrystals.

The effect of thermal treatment of radiation-induced EPR signals of different polymorphic forms of trehalose.

Electron paramagnetic resonance (EPR) signals induced by γ-radiation in different polymorphic forms of trehalose were studied with dosimetry applications in view. Dose response of trehalose in terms of the concentration of induced paramagnetic centers was studied in the dose range from 0.5 to 50 kGy. The dependences of the dose responses of anhydrous ß-crystalline trehalose (TRE(ß)) and glassy trehalose (TRE(g)) on dose are linear up to 15 kGy, whereas the linearity of the dependence for trehalose dihydrate (TRE(h)) is limited to about 10 kGy. At doses above 15 kGy, the dependences get saturated for all three forms. The relative radiation sensitivities pointed to the following order of decreasing concentrations of radiation-induced paramagnetic centers in the forms: TRE(g)>TRE(ß)>TRE(h). The results showed that at all three trehalose polymorphic forms are suitable for dosimetry, especially for retrospective dose measurements. Also, thermal stability and decay kinetics of the EPR signals of the different forms of trehalose were studied in isothermal annealing experiments. The kinetic parameters, which had been derived by fitting the Arrhenius function to the measured decay rate constants, indicated that the fading of the EPR signals varied from one polymorphic form of trehalose to another. This emphasizes the impact of the molecular packing in the vicinity of the radiation-induced paramagnetic centers on their stability.