2D Rhenium- and Niobium-Doped WSe2 Photoactive Cathodes in Photo-Enhanced Hybrid Zn-Ion Capacitors.

Designing a multifunctional device that combines solar energy conversion and energy storage is an appealing and promising approach for the next generation of green power and sustainable society. In this work, we fabricated a single-piece device incorporating undoped WSe2, Re- or Nb-doped WSe2 photocathode, and zinc foil anode system enabling a light-assisted rechargeable aqueous zinc metal cell. Comparison of structural, optical, and photoelectric characteristics of undoped and doped WSe2 has further confirmed that ionic insertion of donor metal (rhenium and niobium) plays an important role in enhancing photoelectrochemical energy storage properties. The electrochemical energy storage cell consisting of Re-doped WSe2 (as the photoactive cathode and zinc metal as anode) showed the best photodriven enhancement in the specific capacitance of around 45% due to efficient harvesting of visible light irradiation. The assembled device exhibited a loss of 20% of its initial specific capacitance after 1500 galvanostatic charge-discharge cycles at 50 mA g-1. The cell also provided a specific energy density of 574.21 mWh kg1- and a power density of 5906 mW kg1- at 15 mA g-1. Under otherwise similar conditions, the pristine WSe2 and Nb-doped WSe2 showed photoenhanced induced capacitance of 43% and 27% at 15 mA g-1 and supplied an energy density of 436.4 mWh kg1- and 202 mWh kg1-, respectively. As a result, a reasonable capacitance improvement obtained by the Re-WSe2 photoenhanced zinc-ion capacitor could provide a facile and constructive way to achieve a highly efficient and low-cost solar-electrochemical capacitor system.

Exploration of Charge Storage Behavior of Binder-Free EDL Capacitors in Aqueous Electrolytes.

Charge storage in electrochemical double-layer capacitors (EDLCs) is via the adsorption of electrolyte counterions in their positive and negative electrodes under an applied potential. This study investigates the EDLC-type charge storage in carbon nanotubes (CNT) electrodes in aqueous acidic (NaHSO4), basic (NaOH), and neutral (Na2SO4) electrolytes of similar cations but different anions as well as similar anions but different cations (Na2SO4 and Li2SO4) in a two-electrode Swagelok-type cell configuration. The physicochemical properties of ions, such as mobility/diffusion and solvation, are correlated with the charge storage parameters. The neutral electrolytes offer superior charge storage over the acidic and basic counterparts. Among the studied ions, SO4 2- and Li+ showed the most significant capacitance owing to their larger solvated ion size. The charge stored by the anions and cations follows the order SO4 2- > HSO4 - > OH- and Li+ > Na+, respectively. Consequently, the CNT//Li2SO4//CNT cell displayed outstanding charge storage indicators (operating voltage ∼0-2 V, specific capacitance ∼122 F·g-1, specific energy ∼67 W h·kg-1, and specific power ∼541 W·kg-1 at 0.5 A·g-1) than the other cells, which could light a red light-emitting diode (2.1 V) for several minutes. Besides, the CNT//Li2SO4//CNT device showed exceptional rate performance with a capacitance retention of ∼95% at various current densities (0.5-2.5 A·g-1) after 6500 cycles. The insights from this work could be used to design safer electrochemical capacitors of high energy density and power density.

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory.

In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 108 V/m. The current transport mechanism was explained from the output characteristics using the Fowler-Nordheim tunneling theory. Capacitance-voltage (C-V) measurements have been employed to determine the value of the oxide capacitance and to examine the memory effect. The hysteresis behavior observed from the C-V characteristics show the suitability of the device for memory applications with a low operating voltage of 3 V. The charge trapping behavior of GO was explained by the energy band diagram. Frequency-dependent C-V measurements in the range 100 kHz to 1 MHz were also performed to account for the memory window obtained in the devices. The charge retention and endurance characteristics were evaluated under a constant voltage stress to check the reliability of device operation.