ABSTRACT
The pressure dependence of the resistivities of a single-component molecular conductor, [Ni(hfdt)2] (hfdt = bis(trifluoromethyl)tetrathiafulvalenedithiolate) with semiconducting properties at ambient pressure was examined. The four-probe resistivity measurements were performed up to â¼10 GPa using a diamond anvil cell. The low-temperature insulating phase was suppressed above 7.5 GPa and the resistivity dropped, indicating the superconducting transition occurred around 7.5-8.7 GPa with a maximum Tc (onset temperature) of 5.5 K. The high-pressure crystal and electronic band structures were derived by the first-principle calculations at 6-11 GPa. The crystal was found to retain the semiconducting band structure up to 6 GPa. But the electron and hole Fermi surfaces appear at 8 GPa. These results of the calculations agree well with the observation that the pressure-induced superconducting phase of [Ni(hfdt)2] appeared just above the critical pressure where the low-temperature insulating phase was suppressed.
ABSTRACT
The infrared spectra of the crystal of transition metal complex molecules with extended-TTF ligands, Ni(tmdt)2, which is the first single-component molecular metal that has a stable metallic state even at low temperatures, exhibited an extremely low-energy electronic absorption around 2200 cm-1 (tmdt = trimethylenetetrathiafulvalenedithiolate). The systematic shift of the absorption peaks for molecules similar to Ni(tmdt)2, which range from metallic to semiconducting crystals, shows that the single-component molecular conductors are composed of molecules with unprecedentedly small HOMO-LUMO gaps.