1.
Sci Technol Adv Mater
; 15(3): 035001, 2014 Jun.
Article
in English
| MEDLINE
| ID: mdl-27877677
ABSTRACT
Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1 µm2) and a Hall mobility of â¼240 cm2 V-1 s-1. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.