A new approach to three-dimensional microstructure reconstruction of a polycrystalline solar cell using high-efficiency Cu(In,Ga)Se2.

A new method for efficiently converting electron backscatter diffraction data obtained using serial sectioning by focused ion beam of a polycrystalline thin film into a computational, three-dimensional (3D) structure is presented. The reported data processing method results in a more accurate representation of the grain surfaces, reduced computer memory usage, and improved processing speed compared to traditional voxel methods. The grain structure of a polycrystalline absorption layer from a high-efficiency Cu(In,Ga)Se2 solar cell (19.5%) is reconstructed in 3D and the grain size and surface distribution is investigated. The grain size distribution is found to be best fitted by a log-normal distribution. We further find that the grain size is determined by the [Ga]/([Ga] + [In]) ratio in vertical direction, which was measured by glow discharge optical emission spectroscopy. Finally, the 3D model derived from the structural information is applied in optoelectronic simulations, revealing insights into the effects of grain boundary recombination on the open-circuit voltage of the solar cell. An accurate 3D structure like the one obtained with our method is a prerequisite for a detailed understanding of mechanical properties and for advanced optical and electronic simulations of polycrystalline thin films.

Impact of dynamic co-evaporation schemes on the growth of methylammonium lead iodide absorbers for inverted solar cells.

A variety of different synthesis methods for the fabrication of solar cell absorbers based on the lead halide perovskite methylammonium lead iodide (MAPbI3, MAPI) have been successfully developed in the past. In this work, we elaborate upon vacuum-based dual source co-evaporation as an industrially attractive processing technology. We present non-stationary processing schemes and concentrate on details of co-evaporation schemes where we intentionally delay the start/end points of one of the two evaporated components (MAI and PbI2). Previously, it was found for solar cells based on a regular n-i-p structure, that the pre-evaporation of PbI[Formula: see text] is highly beneficial for absorber growth and solar cell performance. Here, we apply similar non-stationary processing schemes with pre/post-deposition sequences for the growth of MAPI absorbers in an inverted p-i-n solar cell architecture. Solar cell parameters as well as details of the absorber growth are compared for a set of different evaporation schemes. Contrary to our preliminary assumptions, we find the pre-evaporation of PbI2 to be detrimental in the inverted configuration, indicating that the beneficial effect of the seed layers originates from interface properties related to improved charge carrier transport and extraction across this interface rather than being related to an improved absorber growth. This is further evidenced by a performance improvement of inverted solar cell devices with pre-evaporated MAI and post-deposited PbI2 layers. Finally, we provide two hypothetical electronic models that might cause the observed effects.

Importance of methylammonium iodide partial pressure and evaporation onset for the growth of co-evaporated methylammonium lead iodide absorbers.

Vacuum-based co-evaporation promises to bring perovskite solar cells to larger scales, but details of the film formation from the physical vapor phase are still underexplored. In this work, we investigate the growth of methylammonium lead iodide (MAPbI[Formula: see text]) absorbers prepared by co-evaporation of methylammonium iodide (MAI) and lead iodide (PbI[Formula: see text]) using an in situ X-ray diffraction setup. This setup allows us to characterize crystallization and phase evolution of the growing thin film. The total chamber pressure strongly increases during MAI evaporation. We therefore assume the total chamber pressure to be mainly built up by an MAI atmosphere during deposition and use it to control the MAI evaporation. At first, we optimize the MAI to PbI[Formula: see text] impingement ratios by varying the MAI pressure at a constant PbI[Formula: see text] flux rate. We find a strong dependence of the solar cell device performance on the chamber pressure achieving efficiencies > 14[Formula: see text] in a simple n-i-p structure. On the road to further optimizing the processing conditions we vary the onset time of the PbI[Formula: see text] and MAI deposition by delaying the start of the MAI evaporation by t = 0/8/16 min. This way, PbI[Formula: see text] nucleates as a seed layer with a thickness of up to approximately 20 nm during this initial stage. Device performance benefits from these PbI[Formula: see text] seed layers, which also induce strong preferential thin film orientation as evidenced by grazing incidence wide angle X-ray scattering (GIWAXS) measurements. Our insights into the growth of MAPbI[Formula: see text] thin films from the physical vapor phase help to understand the film formation mechanisms and contribute to the further development of MAPbI[Formula: see text] and related perovskite absorbers.

Influence of the Rear Interface on Composition and Photoluminescence Yield of CZTSSe Absorbers: A Case for an Al2O3 Intermediate Layer.

The rear interface of kesterite absorbers with Mo back contact represents one of the possible sources of nonradiative voltage losses (ΔVoc,nrad) because of the reported decomposition reactions, an uncontrolled growth of MoSe2, or a nonoptimal electrical contact with high recombination. Several intermediate layers (IL), such as MoO3, TiN, and ZnO, have been tested to mitigate these issues, and efficiency improvements have been reported. However, the introduction of IL also triggers other effects such as changes in alkali diffusion, altered morphology, and modifications in the absorber composition, all factors that can also influence ΔVoc,nrad. In this study, the different effects are decoupled by designing a special sample that directly compares four rear structures (SLG, SLG/Mo, SLG/Al2O3, and SLG/Mo/Al2O3) with a Na-doped kesterite absorber optimized for a device efficiency >10%. The IL of choice is Al2O3 because of its reported beneficial effect to reduce the surface recombination velocity at the rear interface of solar cell absorbers. Identical annealing conditions and alkali distribution in the kesterite absorber are preserved, as measured by time-of-flight secondary ion mass spectrometry and energy-dispersive X-ray spectroscopy. The lowest ΔVoc,nrad of 290 mV is measured for kesterite grown on Mo, whereas the kesterite absorber on Al2O3 exhibits higher nonradiative losses up to 350 mV. The anticipated field-effect passivation from Al2O3 at the rear interface could not be observed for the kesterite absorbers prepared by the two-step process, further confirmed by an additional experiment with air annealing. Our results suggest that Mo with an in situ formed MoSe2 remains a suitable back contact for high-efficiency kesterite devices.

Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells.

Thin-film solar cells based on polycrystalline absorbers have reached very high conversion efficiencies of up to 23-25%. In order to elucidate the limiting factors that need to be overcome for even higher efficiency levels, it is essential to investigate microscopic origins of loss mechanisms in these devices. In the present work, a high efficiency (21% without anti-reflection coating) copper indium gallium diselenide (CIGSe) solar cell is characterized by means of a correlative microscopy approach and corroborated by means of photoluminescence spectroscopy. The values obtained by the experimental characterization are used as input parameters for two-dimensional device simulations, for which a real microstructure was used. It can be shown that electrostatic potential and lifetime fluctuations exhibit no substantial impact on the device performance. In contrast, nonradiative recombination at random grain boundaries can be identified as a significant loss mechanism for CIGSe solar cells, even for devices at a very high performance level.

Monitoring the Phase Formation of Coevaporated Lead Halide Perovskite Thin Films by in Situ X-ray Diffraction.

Perovskite solar cells based on (CH3NH3)Pb(I,Cl)3 have recently demonstrated rapidly increasing cell efficiencies. Here, we show progress identifying phases present during the growth of (CH3NH3)Pb(I,Cl)3 perovskite thin films with the vacuum-based coevaporation approach using two sources under varying deposition conditions. With in situ X-ray diffraction, crystalline phases can be identified and monitored in real time. For different (CH3NH3)I-to-PbCl2 flux ratios, two distinct (CH3NH3)Pb(IxCl(1-x))3 phases with high (x > 0.95) and with lower (x < 0.5) iodine content as well as a broad miscibility gap in-between were found. During post deposition annealing we observe recrystallization and preferential orientation effects and finally the decomposition of the perovskite film to PbI2 at temperatures above 200 °C.