Energy level alignment at organic/inorganic semiconductor heterojunctions: Fermi level pinning at the molecular interlayer with a reduced energy gap.

The electronic properties of the organic/inorganic semiconductor heterojunction formed by para-sexiphenyl (6P) and three different faces of ZnO are investigated using photoelectron spectroscopy and X-ray absorption. While multilayer molecules stand almost upright with respect to the surface plane, we evidence the presence of a lying 6P interlayer, which exhibits a higher electron affinity. This is due to an energy gap narrowing because of the close vicinity of that interlayer to the higher dielectric constant ZnO and a more planar molecular conformation compared to molecules in the bulk. Both effects have a significant impact on the level alignment mechanisms at the three interfaces, i.e., surface electron push-back and Fermi level pinning. We disentangle the contribution of each effect to the level alignment for both standing and lying 6P layers and show that on ZnO(0001[combining macron]) only the push-back contributes, while on ZnO(101[combining macron]0) and ZnO(0001) Femi level pinning occurs in addition. In all three cases the lying 6P interlayer establishes the same work function to which the levels of the 6P multilayer align. Only the identification of the complex interplay of level alignment mechanisms and molecular degrees of freedom allows deriving a reliable picture of the energy levels at this heterojunction. This is important as the presence of an interlayer and its modified electronic states might go unnoticed, and conclusions on the correlation between purported interfacial energy levels and functionality of such semiconductor heterojunctions could be misleading.

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces.

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb0) directly impact the energy level alignment at perovskite (CH3NH3PbI3-xClx) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.

Charge Transfer Absorption and Emission at ZnO/Organic Interfaces.

We investigate hybrid charge transfer states (HCTS) at the planar interface between α-NPD and ZnO by spectrally resolved electroluminescence (EL) and external quantum efficiency (EQE) measurements. Radiative decay of HCTSs is proven by distinct emission peaks in the EL spectra of such bilayer devices in the NIR at energies well below the bulk α-NPD or ZnO emission. The EQE spectra display low energy contributions clearly red-shifted with respect to the α-NPD photocurrent and partially overlapping with the EL emission. Tuning of the energy gap between the ZnO conduction band and α-NPD HOMO level (Eint) was achieved by modifying the ZnO surface with self-assembled monolayers based on phosphonic acids. We find a linear dependence of the peak position of the NIR EL on Eint, which unambiguously attributes the origin of this emission to radiative recombination between an electron on the ZnO and a hole on α-NPD. In accordance with this interpretation, we find a strictly linear relation between the open-circuit voltage and the energy of the charge state for such hybrid organic-inorganic interfaces.

Space-charge transfer in hybrid inorganic-organic systems.

We discuss density functional theory calculations of hybrid inorganic-organic systems that explicitly include the global effects of doping (i.e., position of the Fermi level) and the formation of a space-charge layer. For the example of tetrafluoro-tetracyanoquinodimethane on the ZnO(0001[over ¯]) surface we show that the adsorption energy and electron transfer depend strongly on the ZnO doping. The associated work function changes are large, for which the formation of space-charge layers is the main driving force. The prominent doping effects are expected to be quite general for charge-transfer interfaces in hybrid inorganic-organic systems and important for device design.