Optical manipulation of nanoparticles and biomolecules in sub-wavelength slot waveguides.

The ability to manipulate nanoscopic matter precisely is critical for the development of active nanosystems. Optical tweezers are excellent tools for transporting particles ranging in size from several micrometres to a few hundred nanometres. Manipulation of dielectric objects with much smaller diameters, however, requires stronger optical confinement and higher intensities than can be provided by these diffraction-limited systems. Here we present an approach to optofluidic transport that overcomes these limitations, using sub-wavelength liquid-core slot waveguides. The technique simultaneously makes use of near-field optical forces to confine matter inside the waveguide and scattering/adsorption forces to transport it. The ability of the slot waveguide to condense the accessible electromagnetic energy to scales as small as 60 nm allows us also to overcome the fundamental diffraction problem. We apply the approach here to the trapping and transport of 75-nm dielectric nanoparticles and lambda-DNA molecules. Because trapping occurs along a line, rather than at a point as with traditional point traps, the method provides the ability to handle extended biomolecules directly. We also carry out a detailed numerical analysis that relates the near-field optical forces to release kinetics. We believe that the architecture demonstrated here will help to bridge the gap between optical manipulation and nanofluidics.

Optofluidic trapping and transport on solid core waveguides within a microfluidic device.

In this work we demonstrate an integrated microfluidic/photonic architecture for performing dynamic optofluidic trapping and transport of particles in the evanescent field of solid core waveguides. Our architecture consists of SU-8 polymer waveguides combined with soft lithography defined poly(dimethylsiloxane) (PDMS) microfluidic channels. The forces exerted by the evanescent field result in both the attraction of particles to the waveguide surface and propulsion in the direction of optical propagation both perpendicular and opposite to the direction of pressure-driven flow. Velocities as high as 28 mum/s were achieved for 3 mum diameter polystyrene spheres with an estimated 53.5 mW of guided optical power at the trapping location. The particle-size dependence of the optical forces in such devices is also characterized.

Broad-band optical parametric gain on a silicon photonic chip.

Developing an optical amplifier on silicon is essential for the success of silicon-on-insulator (SOI) photonic integrated circuits. Recently, optical gain with a 1-nm bandwidth was demonstrated using the Raman effect, which led to the demonstration of a Raman oscillator, lossless optical modulation and optically tunable slow light. A key strength of optical communications is the parallelism of information transfer and processing onto multiple wavelength channels. However, the relatively narrow Raman gain bandwidth only allows for amplification or generation of a single wavelength channel. If broad gain bandwidths were to be demonstrated on silicon, then an array of wavelength channels could be generated and processed, representing a critical advance for densely integrated photonic circuits. Here we demonstrate net on/off gain over a wavelength range of 28 nm through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides. We also demonstrate wavelength conversion in the range 1,511-1,591 nm with peak conversion efficiencies of +5.2 dB, which represents more than 20 times improvement on previous four-wave-mixing efficiencies in SOI waveguides. These advances allow for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit. Additionally, all-optical delays, all-optical switches, optical signal regenerators and optical sources for quantum information technology, all demonstrated using four-wave mixing in silica fibres, can now be transferred to the SOI platform.

Tailored anomalous group-velocity dispersion in silicon channel waveguides.

We present the first experimental demonstration of anomalous group-velocity dispersion (GVD) in silicon waveguides across the telecommunication bands. We show that the GVD in such waveguides can be tuned from -2000 to 1000 ps/(nm*km) by tailoring the cross-sectional size and shape of the waveguide.

High confinement in silicon slot waveguides with sharp bends.

Slot waveguides allow for high optical confinement in a planar optical waveguide. Here we show a method for maintaining this high degree of confinement in slot waveguides with sharp bends. This high confinement can be achieved by using an asymmetric slot-based structure, where the mode in the bend remains localized in the slot region. We show that the relative power inside the slot can be as high as 28% for a 1 mum radius bend in an air-clad silicon waveguide.

Generation of correlated photons in nanoscale silicon waveguides.

.We experimentally study the generation of correlated pairs of photons through four-wave mixing (FWM) in embedded silicon waveguides. The waveguides, which are designed to exhibit anomalous group-velocity dispersion at wavelengths near 1555 nm, allow phase matched FWM and thus efficient pair-wise generation of non-degenerate signal and idler photons. Photon counting measurements yield a coincidence-to-accidental ratio (CAR) of around 25 for a signal (idler) photon production rate of about 0.05 per pulse. We characterize the variation in CAR as a function of pump power and pump-to-sideband wavelength detuning. These measurements represent a first step towards the development of tools for quantum information processing which are based on CMOS-compatible, silicon-on-insulator technology.

Ultrafast all-optical modulation on a silicon chip.

We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip.