Growth of Li x La y Sr z MnO3 thin films by pulsed laser deposition: complex relation between thin film composition and deposition parameters.

Li x La y Sr z MnO3 thin films of various compositions (x,y,z) have been grown using pulsed laser deposition. The compositions of the films have been studied as a function of deposition temperature, target-to-substrate distance and deposition pressure with respect to different cation ratios of the targets by inductively coupled plasma mass spectrometry. When growing multi-elemental oxide thin films containing lithium (with its large mass difference to other elements), lithium loss is most probably inevitable. But the desired thin film composition can be achieved by selecting specific growth conditions and different target compositions. The experiments also elucidate some of the mechanisms behind the incongruent lithium transfer from the targets to thin films.

Crystallization of zirconia based thin films.

The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C.

Multiferroic properties of o-LuMnO3 controlled by b-axis strain.

Strain is a leading candidate for controlling magnetoelectric coupling in multiferroics. Here, we use x-ray diffraction to study the coupling between magnetic order and structural distortion in epitaxial films of the orthorhombic (o-) perovskite LuMnO(3). An antiferromagnetic spin canting in the E-type magnetic structure is shown to be related to the ferroelectrically induced structural distortion and to a change in the magnetic propagation vector. By comparing films of different orientations and thicknesses, these quantities are found to be controlled by b-axis strain. It is shown that compressive strain destabilizes the commensurate E-type structure and reduces its accompanying ferroelectric distortion.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Interface superconductor with gap behaviour like a high-temperature superconductor.

The physics of the superconducting state in two-dimensional (2D) electron systems is relevant to understanding the high-transition-temperature copper oxide superconductors and for the development of future superconductors based on interface electron systems. But it is not yet understood how fundamental superconducting parameters, such as the spectral density of states, change when these superconducting electron systems are depleted of charge carriers. Here we use tunnel spectroscopy with planar junctions to measure the behaviour of the electronic spectral density of states as a function of carrier density, clarifying this issue experimentally. We chose the conducting LaAlO3-SrTiO3 interface as the 2D superconductor, because this electron system can be tuned continuously with an electric gate field. We observed an energy gap of the order of 40 microelectronvolts in the density of states, whose shape is well described by the Bardeen-Cooper-Schrieffer superconducting gap function. In contrast to the dome-shaped dependence of the critical temperature, the gap increases with charge carrier depletion in both the underdoped region and the overdoped region. These results are analogous to the pseudogap behaviour of the high-transition-temperature copper oxide superconductors and imply that the smooth continuation of the superconducting gap into pseudogap-like behaviour could be a general property of 2D superconductivity.

Strain-induced ferromagnetism in antiferromagnetic LuMnO3 thin films.

Single phase and strained LuMnO(3) thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1µ(B)), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

Electric-field-induced polar order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures.

With ellipsometry, x-ray diffraction, and resistance measurements we investigated the electric-field effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at negative gate voltage is induced, or at least enhanced, by a polar phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent screening. In particular, we show that the charge localization and the polar order of SrTiO3 both develop below ∼50 K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage.

Tunable conductivity threshold at polar oxide interfaces.

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO(3) and LaAlO(3) have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO(3) and LaAlO(3), and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO(3) layer is diluted with SrTiO(3), and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO(3) in this solid solution, and thereby also with the layer's formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.

Evolution of the interfacial structure of LaAlO3 on SrTiO3.

The evolution of the atomic structure of LaAlO_{3} grown on SrTiO_{3} was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO_{3}, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. Based on these structures, the threshold for formation of a two-dimensional electron system at a film thickness of 4 monolayers is quantitatively explained. The findings are also qualitatively reproduced by density-functional-theory calculations.

Dynamical response and confinement of the electrons at the LaAlO3/SrTiO3 interface.

With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier concentration of N(s) approximately = 5-9x10(13) cm(-2), an effective mass of m*=3.2+/-0.4m(e), and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi(1-x)Nb(x)O3 and therefore suggestive of polaronic correlations. We also determined the vertical concentration profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm.

Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures with hard x-ray photoelectron spectroscopy.

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

Electron scattering at dislocations in LaAlO3/SrTiO3 interfaces.

We report experimental investigations of the effects of microstructural defects and of disorder on the properties of 2D electron gases at oxide interfaces. The cross section for scattering of electrons at dislocations in LaAlO(3)/SrTiO(3) interfaces has been measured and found to equal approximately 5 nm. Our experiments reveal that the transport properties of these electron gases are strongly influenced by scattering at dislocation cores.

Chemical and structural changes of quartz surfaces due to structuring by laser-induced backside wet etching.

Various physical and chemical processes which are involved in laser-induced backside wet etching are investigated. The surface of quartz etched by the laser-induced backside wet etching using a XeCl excimer laser at various fluences is analyzed by Raman microscopy, X-ray photoelectron spectroscopy and fiber-tip attenuated total-reflection Fourier-transform infrared spectroscopy. The investigations reveal the formation of a high amount of amorphous carbon deposits at low laser fluences, which strongly adhere to the quartz surface. Combining X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy reveals that the quartz is also chemically and structurally modified due to a loss of oxygen and by a change of the quartz polymorph at intermediate and high laser fluences. These modification and their differences for different fluences are explained by the etching mechanisms itself, i.e. different magnitudes of temperature and pressure jumps. The results show clearly which conditions for etching must be applied to machine high-quality structures, e.g. micro-optical elements in quartz.

Nanoscale control of an interfacial metal-insulator transition at room temperature.

Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

Superconducting interfaces between insulating oxides.

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of congruent with 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of congruent with 10 nanometers.

Tunable quasi-two-dimensional electron gases in oxide heterostructures.

We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high-electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.

Electron transport through YBa2Cu3O7-delta grain boundary interfaces between 4.2 and 300 K.

The current-induced dissipation in YBa(2)Cu(3)O(7-delta) grain boundary tunnel junctions has been measured between 4.2 and 300 K. It is found that the resistance of 45 degrees (100)/(110) junctions decreases linearly by a factor of 4 when their temperature is increased from 100 to 300 K. At the superconducting transition temperature T(c) the grain boundary resistance of the normal state and of the superconducting state extrapolates to the same value.

d-wave induced zero-field resonances in dc pi-superconducting quantum interference devices.

A dc pi SQUID consists of a superconducting ring interrupted by two Josephson junctions, one of which carries in equilibrium a pi phase difference, caused, for example, by the d-wave pairing symmetry of the high- T(c) cuprates. If this phase shift is maintained in the voltage state, anomalous resonance currents are expected in the SQUIDs transport characteristics. Here we report the observation of such resonances for high- T(c) dc pi SQUIDs, providing evidence for the influence of the d-wave symmetry on the voltage state of a Josephson junction for frequencies of several tens of GHz.

Evidence of doping-dependent pairing symmetry in cuprate superconductors.

Scanning tunneling spectroscopy studies reveal long-range spatial homogeneity and predominantly d(x(2)-y(2))-pairing spectral characteristics in under- and optimally doped YBa2Cu 3O (7-delta) superconductors, whereas STS on YBa2(Cu 0.9934Zn 0.0026Mg (0.004))3O (6.9) exhibits microscopic spatial modulations and strong scattering near the Zn or Mg impurity sites, together with global suppression of the pairing potential. In contrast, in overdoped (Y 0.7Ca (0.3))Ba 2Cu 3O (7-delta), (d(x(2)-y(2))+s)-pairing symmetry is found, suggesting significant changes in the superconducting ground state at a critical doping value.