Toward a Metal Anode-Free Zinc-Air Battery for Next-Generation Energy Storage.

Rechargeable aqueous zinc-air batteries (ZABs) promise high energy density and safety. However, the use of conventional zinc anodes affects the energy output from the battery, so that the theoretical energy density is not achievable under operation conditions. A large portion of the zinc is shielded by anode passivation during the discharge process and remains electrochemically unused, making the operation of rechargeable ZABs inefficient up to date. In a metal anode-free ZAB, there is no unnecessary excess zinc if the zinc reservoir can be precisely adjusted by electrodeposition of zinc from the electrolyte. In this respect, an anode-free battery uses the electrolyte offering a dual-mode functionality not only providing ionic conductivity but also being the source of zinc. In addition, it is shown that a defined porous anode architecture is crucial for high rechargeability in this new type of ZAB. 3D-spatially arranged carbon nanotubes as geometrically defined host structures allow a homogeneous zinc deposition from the electrolyte. Together with carbon nanohorns as an active 2e- catalyst on the cathode side, the rechargeability of this new concept reaches up to 92%.

Comment on Pashchanka, M. Conceptual Progress for Explaining and Predicting Self-Organization on Anodized Aluminum Surfaces. Nanomaterials 2021, 11, 2271.

In the review article "Conceptual Progress for Explaining and Predicting Self-Organization on Anodized Aluminum Surfaces" [...].

Gas phase synthesis and adsorption properties of a 3D ZIF-8 CNT composite.

The metal organic framework structure ZIF-8 has been grown directly on vertically aligned carbon nano tubes (VACNT) by a solid vapour transformation of a ZnO@VACNT composite with gaseous 2-methylimidazole. The ZnO@VACNT composite was synthesised by atomic layer deposition (ALD) using diethylzinc and water as precursors resulting in a homogeneous distribution of crystalline ZnO particles with an average size of 13 nm within the 3D VACNT host structure. The ZnO@VACNT composite was transformed to ZIF-8 by reaction with 2-methyl-imidazole (Hmim) while maintaining the 3D VACNT structure employing a solid vapour transformation reaction. Reaction time and temperature were identified as key parameters to control the generated surface area and the degree of conversion of the nanoscaled ZnO particles. 80 °C and 72 h were found to be sufficient for a complete conversion while longer reaction times result in even higher surface areas of the formed ZIF-8@VACNT composite. Surface areas of up to 1569 m2 g-1 could be achieved. Temperatures below 80 °C led to an incomplete conversion even under longer reaction times of up to 6 weeks. Finally, the CO2 adsorption properties of the ZIF-8@VACNT composite were evaluated. A composite with a 27 w% content of CNTs and a surface area of 1277 m2 g-1 shows an adsorption of 6.05 mmol g-1 CO2 at 30 bar. From the comparison with the pristine materials ZIF-8 and VACNT alone the observed overall CO2 adsorption behaviour of the composite is a combination of the behaviour of the individual components, ZIF-8 and VACNTs. Namely the typical steep rise of the ZIF-8 in the low-pressure regime with a nearly linear steady progression in the medium pressure size regime, the latter typical for VACNTs, proves that the combination of both components leads to enhanced adsorption properties of the ZIF-8@VACNT composite compared to the sole components ZIF-8 and VACNTs.

Conductive Geopolymers as Low-Cost Electrode Materials for Microbial Fuel Cells.

Geopolymer (GP) inorganic binders have a superior acid resistance compared to conventional cement (e.g., Portland cement, PC) binders, have better microbial compatibility, and are suitable for introducing electrically conductive additives to improve electron and ion transfer properties. In this study, GP-graphite (GPG) composites and PC-graphite (PCG) composites with a graphite content of 1-10 vol % were prepared and characterized. The electrical conductivity percolation threshold of the GPG and PCG composites was around 7 and 8 vol %, respectively. GPG and PCG composites with a graphite content of 8 to 10 vol % were selected as anode electrodes for the electrochemical analysis in two-chamber polarized microbial fuel cells (MFCs). Graphite electrodes were used as the positive control reference material. Geobacter sulfurreducens was used as a biofilm-forming and electroactive model organism for MFC experiments. Compared to the conventional graphite anodes, the anode-respiring biofilms resulted in equal current production on GPG composite anodes, whereas the PCG composites showed a very poor performance. The largest mean value of the measured current densities of a GPG composite used as anodes in MFCs was 380.4 µA cm-2 with a standard deviation of 129.5 µA cm-2. Overall, the best results were obtained with electrodes having a relatively low Ohmic resistance, that is, GPG composites and graphite. The very first approach employing sustainable GPs as a low-cost electrode binder material in an MFC showed promising results with the potential to greatly reduce the production costs of MFCs, which would also increase the feasibility of MFC large-scale applications.

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation.

Alumina thin films are synthesized by combustion synthesis of mixtures of aluminium nitrate (ALN) and methylcarbazate (MCZ). The interdependence of the ratio of oxidizer and reducing agent on composition, microstructure and electronic properties of the resulting oxide layers is investigated. The dielectric and insulating behaviour is improved by addition of different amounts of MCZ (MCZ : ALN = 0.67 or 2.5). In this way films (thickness ∼140 nm) with a dielectric constant κ of 9.7 and a dielectric loss tan δ below 0.015 can be achieved. Medium concentrations of MCZ (MCZ : ALN = 1.0 or 1.5) lead to films with lower performance, though. Our studies indicate two opposing effects of the organic additive. Removal of organic residues during film formation as combustion gases is potentially detrimental. Larger amounts of MCZ, however, cause condensation reactions in the precusor mixture, which improve the microstructure. The porosity of the films can be sucessfully analyzed by positron annihilation liftetime studies. In this way the impact of the organic ligand sphere on the resulting microstructure can be quantified. Samples prepared from ALN alone exhibit mesopores and also larger micropores. In contrast, the formation of mesopores can be inhibited by addition of MCZ.

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In2 O3 , SnO2 , and Al2 O3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2 O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2 O3 /SnO2 /Al2 O3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (µsat ) of 2.0 cm2 ⋅ V-1 s-1 , a threshold-voltage (Vth ) of 8.6 V, a high current on/off ratio (IOn /IOff ) of 1.0×107 , and a subthreshold swing (SS) of 485 mV ⋅ dec-1 . The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc. Thin Film Transistor and Sensoric Behaviour of ZnO Films and Rods.

Invited for the cover of this issue is Jörg J. Schneider and co-workers at Technical University Darmstadt, Helmholtz-Zentrum Dresden-Rossendorf and KIT Karlsruhe. The image depicts the application of high energy generated electron/positron couples which are able to detect defects sites in semiconducting zinc oxide thin films. Read the full text of the article at 10.1002/chem.202004270.

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods.

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm2 V-1 s-1 . The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (VZn ) with one or more oxygen vacancies (VO ) in larger structural entities. Such VO -VZn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.

Environmentally Benign Solution-Based Procedure for the Fabrication of Metal Oxide Coatings on Metallic Pigments.

Aluminum pigments were coated with Fe2O3 and CuO by solution-based thermal decomposition of the urea nitrate compounds hexakisureairon(III)nitrate and tetrakisureacopper(II)nitrate. The deposition process was optimized to obtain homogeneously coated aluminum pigments. The growth of the surface coatings was controlled by investigation with scanning electron microscopy, energy dispersive X-ray spectroscopy and static light scattering as well as infrared, X-ray diffraction and thermogravimetric analysis. The iron precursor showed an incomplete decomposition in solution, incorporating traces of urea molecules inside the coatings while the copper precursor showed complete dissociation accompanied by in situ formation of amine complexes. The amount of organic residues resulting from ligand fragments in the final oxide coatings could be reduced to 22 % for the iron oxide and 12 % for the copper oxide by further temperature treatment in solution (259 °C). Colorimetric investigations of the obtained pigments revealed an excellent hiding power, outperforming the pigments used in current state-of-the-art formulations.

A 3D-polyphenylalanine network inside porous alumina: Synthesis and characterization of an inorganic-organic composite membrane.

Surface functionalization of porous materials allows for the introduction of additional functionality coupled with high mechanical stability of functionalized inner pores. Herein, we investigate the surface-initiated ring-opening polymerization (SI-ROP) of phenylalanine-N-carboxyanhydride (PA-NCA) in porous alumina membranes (ALOX-membranes) with respect to different solvent mixtures (tetrahydrofuran (THF) and dichloromethane (DCM)). It was found that increasing the volume fraction of DCM leads to an increasing amount of fibrillar polymer structures within the porous ALOX-membrane. A three-dimensional fibrillar network with intrinsic porosity was formed in DCM, whereas in THF, a dense and smooth polypeptide film was observed. A post-treatment with a mixture of chloroform and dichloroacetic acid leads to rearrangement of the morphology of the grafted polymer films. The analysis by scanning electron microscopy (SEM), near-infrared spectroscopy (NIR) and contact angle measurements (CA) reveals a change in morphology of the grafted polymer films, which is due to the rearrangement of the secondary structure of the polypeptides. No significant loss of the surface-grafted polypeptides was determined by thermogravimetric (TG) measurements, which indicates that the change in morphology of the polymer films is solely a result of a conformational change of the surface-grafted polypeptides. Furthermore, adsorption of a test analyte (chloroanilic acid) was investigated with respect to different polymer functionalization schemes for reversed-phase solid phase extraction applications. The adsorption capability of the functionalized composite membrane was increased from 16.7% to 38.1% compared to the native ALOX-membrane.

Synthesis and Assembly of Zinc Oxide Microcrystals by a Low-Temperature Dissolution-Reprecipitation Process: Lessons Learned About Twin Formation in Heterogeneous Reactions.

Cobalt-doped zinc oxide single crystals with the shape of hexagonal platelets were synthesized by thermohydrolysis of zinc acetate, cobalt acetate, and hexamethylenetetramine (HMTA) in mixtures of ethanol and water. The mineralization proceeds by a low-temperature dissolution-reprecipitation process from the liquid phase by the formation of basic cobalt zinc salts as intermediates. The crystal shape as well as twin formation of the resulting oxide phase can be influenced by careful choice of the solvent mixture and the amount of doping. An understanding of the course of the reaction was achieved by comprehensive employment of analytical techniques (i.e., SEM, XRD, IR) including an in-depth HRTEM study of precipitates from various reaction stages. In addition, EPR as well as UV/Vis spectroscopic measurements provide information about the insertion of the cobalt dopant into the zincite lattice. The Langmuir-Blodgett (LB) technique is shown to be suitable for depositing coatings of the platelets on glass substrates functionalized with polyelectrolyte multilayers and hence is applied for the formation of monolayers containing domains with ordered tessellation. No major differences are found between deposits on substrates with anionic or cationic surface modification. The adherence to the substrates is sufficient to determine the absolute orientation of the deposited polar single crystals by piezoresponse force microscopy (PFM) and Kelvin probe force microscopy (KPFM) studies.

Photothermal catalytic properties of layered titanium chalcogenide nanomaterials.

The search for novel photocatalysts that make use of almost the entire solar spectrum remains an ongoing task to achieve high efficiency in energy conversion. While titanium chalcogenides offer a variety of phase compositions with different photophysical properties, their photocatalytic performance in pollutant degradation has not been investigated to date. In contrast to the model photocatalyst titanium dioxide, titanium chalcogenides possess small band gaps which make them eligible to absorb light in the visible range up to the near-infrared region, thus making them interesting candidates for photocatalysis. Herein titanium chalcogenide-based photocatalysts are synthesized by the chemical vapor transport (CVT) method and studied for their photocatalytic activity towards pollutant degradation. A series of titanium chalcogenides TiXn (X = S, n = 1-3; X = Se, n = 2; X = Te, n = 1) have been characterized by a variety of physico-chemical methods. Due to the expected non-stoichiometry of some titanium sulfides, they offer a large number of defect states which make them interesting candidates for photocatalysis. Thus, these titanium-chalcogenides were systematically studied for the photocatalytic degradation of pollutants using methyl orange dye as the test pollutant under simulated sunlight. Particularly TiS and TiS3 show high photocatalytic and thermocatalytic activity, outperforming the activity of titanium dioxide (pure anatase). By controlling the ratios of titanium and chalcogen elements and the specific reaction conditions, a variety of titanium chalcogenides with different compositions and phases showing a high photocatalytic activity can be accessed. Furthermore, it is found that the formation of a titanium dioxide passivation layer during photocatalysis results in a titanium oxide/titanium sulfide heterostructure. This allows further enhancement of the photocatalytic and thermocatalytic activity compared to the bare Ti-chalcogenides.

Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO21) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1-3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm-2, leakage current densities below 1.0 × 10-9 A cm-2 (at 1 MV cm-1) and breakdown voltages above 2 MV cm-1. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed Y x O y based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (µ sat) of 2.1 cm2 V-1 s-1, a threshold voltage (V th) of 6.9 V and an on/off current ratio (I on/off) of 7.6 × 105.

Tungsten oxide nanorod architectures as 3D anodes in binder-free lithium-ion batteries.

Tungsten oxide nanorods were synthesized using a template assisted process. A polycarbonate membrane (pore diameter 100 nm) was vacuum infiltrated by an aqueous solution of ammonium paratungstate ((NH4)10H2W12O42·xH2O) and yielded crystalline 3D oriented WO3 nanorod arrays after template etching and calcination. By coating the nanorod arrays with carbon, a binder-free 3D WO3/C composite electrode could be fabricated, allowing capacities up to 1149, 811, 699, 559 and 253 mA h g-1 for cycles 1, 2, 20, 50 and 200 as well as a coulombic efficiency of around 99%. Moreover, as prepared WO3 nanorod structures without that specific type of carbon coating deliver capacities in a range of 200-250 mA h g-1 after 20 cycles. Finally, a full cell lithium ion battery system is fabricated. It consists of LiCoO2 nanoparticles as cathode and binder-free carbon coated 3D WO3 composite material as anode. Pre-lithiation of this 3D WO3/C composite material as pre-conditioning before full cell assembly leads to a cell capacity of almost twice of that without pre-lithiation. Discharge capacities of 111, 91, 41 and 23 mA h g-1 can be obtained for cycles 2, 20, 100 and 200 with a coulombic efficiency of around 99% in the case of the pre-lithiated 3D WO3/C composite anode.

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS.

The design of efficient substrates for surface-enhanced Raman spectroscopy (SERS) for large-scale fabrication at low cost is an important issue in further enhancing the use of SERS for routine chemical analysis. Here, we systematically investigate the effect of different radio frequency (rf) plasmas (argon, hydrogen, nitrogen, air and oxygen plasma) as well as combinations of these plasmas on the surface morphology of thin silver films. It was found that different surface structures and different degrees of surface roughness could be obtained by a systematic variation of the plasma type and condition as well as plasma power and treatment time. The differently roughened silver surfaces act as efficient SERS substrates showing greater enhancement factors compared to as prepared, sputtered, but untreated silver films when using rhodamine B as Raman probe molecule. The obtained roughened silver films were fully characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron (XPS and Auger) and ultraviolet-visible spectroscopy (UV-vis) as well as contact angle measurements. It was found that different morphologies of the roughened Ag films could be obtained under controlled conditions. These silver films show a broad range of tunable SERS enhancement factors ranging from 1.93 × 102 to 2.35 × 105 using rhodamine B as probe molecule. The main factors that control the enhancement are the plasma gas used and the plasma conditions, i.e., pressure, power and treatment time. Altogether this work shows for the first time the effectiveness of a plasma treatment for surface roughening of silver thin films and its profound influence on the interface-controlled SERS enhancement effect. The method can be used for low-cost, large-scale production of SERS substrates.

Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.

Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well-defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). For all precursors a multistep decomposition involving a complex redox-reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2 /(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.

SO2 gas adsorption on carbon nanomaterials: a comparative study.

Owing to their high stability against corrosive gases, carbon-based adsorbents are preferentially used for the adsorptive removal of SO2. In the present study, SO2 adsorption on different carbon nanomaterials namely carbon nanohorns (CNHs), multiwalled carbon nanotubes (MWNTs), single-walled carbon nanotubes (SWNTs) and vertically aligned carbon nanotubes (VACNTs) are investigated and compared against the adsorption characteristics of activated carbon and graphene oxide (GO). A comprehensive overview of the adsorption behavior of this family of carbon adsorbents is given for the first time. The relative influence of surface area and functional groups on the SO2 adsorption characteristics is discussed. The isosteric heat of adsorption values are calculated to quantify the nature of the interaction between the SO2 molecule and the adsorbent. Most importantly, while chemisorption is found to dominate the adsorption behavior in activated carbon, SO2 adsorption on carbon nanomaterials occurs by a physisorption mechanism.

A 3D MoOx/carbon composite array as a binder-free anode in lithium-ion batteries.

Molybdenum(vi) oxide (MoO3) nanorod arrays were synthesized employing a template-assisted method. A polycarbonate membrane as a template was vacuum infiltrated with an aqueous solution of ammonium heptamolybdate. Template removal by oxygen plasma etching and calcination leads to the formation of highly crystalline 3D MoO3 nanorod arrays as a negative replica of the template. By applying sucrose as the carbon precursor, the mantling of the MoO3 nanorods with a thin carbon coating is obtained. Simultaneously, the direct and binder-free contact between the 3D MoOx nanorod arrays and the current collector resulting from the carbon coating could be achieved and leads to high capacities of up to 1376, 783, 856, 804 and 324 mA h g-1 for cycles 1, 2, 20, 50 and 200 as well as a coulombic efficiency of 99% for such 3D MoOx/C composite electrodes. The cycling performance of this 3D MoOx/C composite material is even more impressive, when comparing the determined experimental capacities with the theoretical capacities of graphite (372 mA h g-1) and MoO2 (838 mA h g-1). Additionally, MoO3 nanorod array electrodes without such an encapsulating carbon coating show an average capacity of only 175 mA h g-1 between cycles 20 and 200. Thus, the carbon coating of the MoO3 nanorod array can increase the electrochemical performance of a lithium-ion cell compared to conventional carbon additives when using MoO3 as the active anode material. This emphasizes the positive effects of the intimate and efficient electron transport and large surface area of the electrode material based on a minimal footprint architecture in Li-ion cells.

Complete charge separation provoked by full cation encapsulation in the radical mono- and di-anions of 5,6:11,12-di-o-phenylene-tetracene.

Herein, we report the synthesis and molecular structure of the mono- and dianionic aromatic molecules [(B15C5-κ5O)2K+](LDOPT˙-) (1) and [(B15C5-κ5O)2K+]2(LDOPT2-)THFsolv (2) derived from the parent aromatic polyhydrocarbon 5,6:11,12-di-o-phenylenetetracene (DOPT, LDOPT) by a controlled stepwise one and two electron chemical reduction. The effect of single and double electron charge transfer to a polycondensed aromatic hydrocarbon (PAH) without any disturbing influence of an associated metal cation has been demonstrated. This was achieved by fully sandwiching the cationic K+ counterions between two benzo-15-crown-5-ether (B15C5) ligands resulting in a fully encapsulating (κ10O) geometry which ensures a complete separation of the K+ counterions and the bare anionic PAH species [LDOPT˙-] and [LDOPT2-]. The structural changes accompanied by the stepwise reduction from LDOPT to [LDOPT˙-] to [LDOPT2-] are discussed and compared to earlier predictions based on density functional theory (DFT) as well as the results of previous studies of alkaline metal cationic PAH anion interactions of DOPT in which only a partial metal cation encapsulation has been achieved so far.

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.

The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (µsat.) of 9.3 cm2 V-1 s-1 ( W/ L = 500), an on/off ratio ( Ion/ Ioff) of 5.3 × 109, and a subthreshold swing of 162 mV dec-1, combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In2O3/ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.