Sr[Li2Al2O2N2]:Eu2+-A high performance red phosphor to brighten the future.

Innovative materials for phosphor converted white light-emitting diodes are in high demand owing to the huge potential of the light-emitting diode technology to reduce energy consumption worldwide. As the primary blue diode is already highly optimized, the conversion phosphors are of crucial importance for any further improvements. We report on the discovery of the high performance red phosphor Sr[Li2Al2O2N2]:Eu2+ meeting all requirements for a phosphor's optical properties. It combines the optimal spectral position for a red phosphor, as defined in the 2016 Research & Development-plan of the United States government, with an exceptionally small spectral full width at half maximum and excellent thermal stability. A white mid-power phosphor-converted light-emitting diode prototype utilising Sr[Li2Al2O2N2]:Eu2+ shows an increase of 16% in luminous efficacy compared to currently available commercial high colour-rendering phosphor-converted light-emitting diodes, while retaining excellent high colour rendition. This phosphor enables a big leap in energy efficiency of white emitting phosphor-converted light-emitting-diodes.

Nanostructures in Te/Sb/Ge/Ag (TAGS) thermoelectric materials induced by phase transitions associated with vacancy ordering.

Te/Sb/Ge/Ag (TAGS) materials with rather high concentrations of cation vacancies exhibit improved thermoelectric properties as compared to corresponding conventional TAGS (with constant Ag/Sb ratio of 1) due to a significant reduction of the lattice thermal conductivity. There are different vacancy ordering possibilities depending on the vacancy concentration and the history of heat treatment of the samples. In contrast to the average α-GeTe-type structure of TAGS materials with cation vacancy concentrations <∼3%, quenched compounds like Ge0.53Ag0.13Sb0.27□0.07Te1 and Ge0.61Ag0.11Sb0.22□0.06Te1 exhibit "parquet-like" multidomain nanostructures with finite intersecting vacancy layers. These are perpendicular to the pseudocubic <111> directions but not equidistantly spaced, comparable to the nanostructures of compounds (GeTe)nSb2Te3. Upon heating, the nanostructures transform into long-periodically ordered trigonal phases with parallel van der Waals gaps. These phases are slightly affected by stacking disorder but distinctly different from the α-GeTe-type structure reported for conventional TAGS materials. Deviations from this structure type are evident only from HRTEM images along certain directions or very weak intensities in diffraction patterns. At temperatures above ∼400 °C, a rock-salt-type high-temperature phase with statistically disordered cation vacancies is formed. Upon cooling, the long-periodically trigonal phases are reformed at the same temperature. Quenched nanostructured Ge0.53Ag0.13Sb0.27□0.07Te1 and Ge0.61Ag0.11Sb0.22□0.06Te1 exhibit ZT values as high as 1.3 and 0.8, respectively, at 160 °C, which is far below the phase transition temperatures. After heat treatment, i.e., without pronounced nanostructure and when only reversible phase transitions occur, the ZT values of Ge0.53Ag0.13Sb0.27□0.07Te1 and Ge0.61Ag0.11Sb0.22□0.06Te1 with extended van der Waals gaps amount to 1.6 at 360 °C and 1.4 at 410 °C, respectively, which is at the top end of the range of high-performance TAGS materials.

The solid solution series (GeTe)x(LiSbTe2)2 (1 ≤ x ≤ 11) and the thermoelectric properties of (GeTe)11(LiSbTe2)2.

Exchanging one Ge(2+) with two Li(+) per formula unit in (GeTe)n(Sb2Te3) (n = 1, 2, 3, ...) eliminates cation vacancies, because it leads to an equal number of cations and anions. This substitution results in the solid solution (GeTe)x(LiSbTe2)2 (with x = n - 1, but n not necessarily an integer). For x < 6, these stable compounds crystallize in a rock-salt-type structure with random cation disorder. Neutron data show that a small fraction of Ge occupies tetrahedral voids for x = 2 and 3. For x > 6, (GeTe)x(LiSbTe2)2 forms a GeTe-type structure that shows a phase transition to a cubic high-temperature phase at ca. 280 °C. The thermoelectric properties of (GeTe)11(LiSbTe2)2 have been investigated and show that this compound is a promising thermoelectric material with a ZT value of 1.0 at 450 °C. The high ZT value of the thermodynamically stable compound is caused by a low phononic contribution to the thermal conductivity; probably, Li acts as a "pseudo-vacancy".

From metastable to stable modifications-in situ Laue diffraction investigation of diffusion processes during the phase transitions of (GeTe)nSb2Te3 (6 < n < 15) crystals.

Temperature dependent phase transitions of compounds (GeTe)(n)Sb(2)Te(3) (n = 6, 12, 15) have been investigated by in situ microfocus Laue diffraction. Diffusion processes involving cation defect ordering at ~300 °C lead to different nanostructures which are correlated to changes of the thermoelectric characteristics.