Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics.

We theoretically and experimentally investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with a thickness (55 nm from simulation) that is optimized to guarantee a low reflectivity at the resonance was deposited on nanoporous GaN DBRs fabricated using electrochemical (EC) etching on freestanding semipolar (2021¯) GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The experimental results indicate the presence of a TP mode at ∼ 454 nm on the structure after the Ag deposition, which is also supported by theoretical calculations using a transfer-matrix algorithm. The results from mode dispersion with energy-momentum reflectance spectroscopy measurements also support the presence of a TP mode at the metal-nanoporous GaN DBR interface. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (∼ 4-7 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3), suggesting an application of the nanoporous GaN-based TP structure for optical sensing.

Hybrid optical antennas with photonic resistors.

Hybrid optical antennas, comprising active materials placed in the gaps of plasmonic split-ring-resonators and nano-dimers, have been the subject of numerous recent investigations. Engineered coupling between the two plasmonic resonators is achieved by modulating the active material, enabling control over the near- and far-field electromagnetic properties. Here, using electromagnetics calculations, we study the evolving optical response of a hybrid metal-semiconductor-metal nanorod antenna as the semiconductor free charge carrier density is continuously varied. In particular, we demonstrate qualitatively new behavior arising from epsilon-near-zero properties in intermediately doped semiconductors. In agreement with optical nano-circuit theory, we show that in the epsilon-near-zero regime such a load acts as an ideal optical resistor with an optimized damping response and strongly suppressed electromagnetic scattering. In periodic arrays, or metasurfaces, we then show how to use these effects to construct high-efficiency nanophotonic intensity modulators for dynamically shaping light.