ABSTRACT
This work uses the direct current magnetron sputtering (DCMS) of equi-atomic (AlTiZrHfTa) and Si targets in dynamic sweep mode to deposit nano-layered (AlTiZrHfTa)Nx/SiNx refractory high-entropy coatings (RHECs). Transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are used to investigate the effect of Si addition on the oxidation behavior of the nano-layered coatings. The Si-free nitride coating exhibits FCC structure and columnar morphology, while the Si-doped nitride coatings present a FCC (AlTiZrHfTa)N/amorphous-SiNx nano-layered architecture. The hardness decreases from 24.3 ± 1.0 GPa to 17.5 ± 1.0 GPa because of the nano-layered architecture, whilst Young's modulus reduces from 188.0 ± 1.0 GPa to roughly 162.4 ± 1.0 GPa. By increasing the thickness of the SiNx nano-layer, kp values decrease significantly from 3.36 × 10-8 g2 cm-4 h-1 to 6.06 × 10-9 g2 cm-4 h-1. The activation energy increases from 90.8 kJ·mol-1 for (AlTiZrHfTa)Nx nitride coating to 126.52 kJ·mol-1 for the (AlTiZrHfTa)Nx/SiNx nano-layered coating. The formation of a FCC (AlTiZrHfTa)-Nx/a-SiNx nano-layered architecture results in the improvement of the resistance to oxidation at high temperature.
ABSTRACT
The data presented in this article are related to the published research of "Effect of nitrogen content on structural and mechanical properties of AlTiZrTaHf(-N) high entropy films deposited by reactive magnetron sputtering". This database contains X-ray photoelectron spectroscopy (XPS) measurements, performed in order to determine the extents of nitrides formed in AlTiTaZrHf high entropy films. The latter were prepared by DC magnetron sputtering technique in reactive mode by adding the nitrogen to argon gas. The nitrogen flow rate is calculated by RN2 = N2/(N2+Ar). XPS measurements were done one month later. Oxides were detected on the top surface of the samples. 2p, 3d and 4f core level peaks were fitted in order to determine accurately the chemical composition of the nitride films. Al2p, Ti2p, Zr3d, Ta4f, and Hf4f reveal the formation of nitrides of all elements constituting the films. Atomic percentage of each element was calculated revealing an increase of nitrogen loading and decrease of the metallic fractions of the elements as RN2 grows from 5% to 50%. Nitridation behaviour of each element, as a function of the nitrogen flow rate, is investigated and presented.
