Single ion implantation for single donor devices using Geiger mode detectors.

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method for detecting a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 microm from the center of the collecting junction. This detection efficiency is achieved with sensitivity to approximately 600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example a 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is, furthermore, achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as approximately 10(-1) and 10(-4) for operation temperatures of approximately 300 K and approximately 77 K, respectively. Low temperature operation and reduced false, 'dark', counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10(-4) at an average ion number per gated window of 0.015.

Coulomb drag in the exciton regime in electron-hole bilayers.

Electron-hole bilayers are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the barrier between the layers is reduced. Coulomb drag measurements on devices with a 30 nm barrier are consistent with two weakly coupled 2D Fermi systems where the drag decreases with temperature. For a 20 nm barrier, however, we observe an increase in the drag resistance as the temperature is reduced when a current is driven in the electron layer and voltage measured in the hole layer. These results indicate the onset of strong coupling possibly due to exciton formation or phenomena related to exciton condensation.