Development of a pulsed, variable-energy positron beam for atomic scale defect studies.

Positron annihilation spectroscopy provides a sensitive means of non-destructive characterization of materials, capable of probing single atom vacancies in solids with 10-7 sensitivity. We detail here the development of a magnetically guided, variable energy, pulsed positron beam designed to conduct depth-dependent defect studies in metals, semiconductors, and dielectrics, which will be the first of its kind in the United States. The design of the target stage provides capabilities for measurements during in situ annealing up to 800 °C and incorporates a new approach to minimize the background due to energetic backscattered positrons. The developed beam at Bowling Green State University provides a powerful tool for characterization of thin films, devices, and ion irradiated materials.

A new mechanism for void-cascade interaction from nondestructive depth-resolved atomic-scale measurements of ion irradiation-induced defects in Fe.

The nondestructive investigation of single vacancies and vacancy clusters in ion-irradiated samples requires a depth-resolved probe with atomic sensitivity to defects. The recent development of short-pulsed positron beams provides such a probe. Here, we combine depth-resolved Doppler broadening and positron annihilation lifetime spectroscopies to identify vacancy clusters in ion-irradiated Fe and measure their density as a function of depth. Despite large concentrations of dislocations and voids in the pristine samples, positron annihilation measurements uncovered the structure of vacancy clusters and the change in their size and density with irradiation dose. When combined with transmission electron microscopy measurements, the study demonstrates an association between the increase in the density of small vacancy clusters with irradiation and a remarkable reduction in the size of large voids. This, previously unknown, mechanism for the interaction of cascade damage with voids in ion-irradiated materials is a consequence of the high porosity of the initial microstructure.

Interaction of positronium with dissolved oxygen in liquids.

The interaction of positronium (Ps) with molecular oxygen dissolved in liquids is experimentally investigated. Computer software has been developed for fitting the positron annihilation lifetime spectra in liquids using parameters with clear physical meaning: rate constants of the Ps chemical reactions, annihilation rate constants of the different positron states, probability of Ps formation in a quasi-free state, typical formation time of a Ps nanobubble. Such processing of the spectra allowed identification of the dominant interaction of the Ps atom with dissolved oxygen. It turns out to be mainly ortho-para-conversion (Ps → 1/4 p-Ps + 3/4 o-Ps), but not oxidation (Ps + O2→ e+ + O2-). Values of the reaction rate constants are obtained.

ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation, and gamma-induced positron spectroscopy.

The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors, and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.

X-ray luminescence based spectrometer for investigation of scintillation properties.

A new x-ray luminescence based spectrometer was developed and installed to examine the scintillation properties of materials while revealing the origins of luminescence and investigating trapping defects. Measurements were performed on a number of undoped and Ce doped yttrium aluminum garnet crystals and various luminescence centers were characterized. The measured x-ray luminescence spectra provide information about the spectral range and the scintillation efficiency and linearity. The efficiency of charge-carriers production due to x ray, their energy transfer to the luminescence centers, and the efficiency of luminescence are all reflected in the efficiency of x-ray luminescence.

Nature of native defects in ZnO.

This study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental evidence that the donor nature of oxygen vacancy is approximately 0.7 eV. In addition, this work showed the Zn interstitial was not the donor in the as-grown ZnO and supported recent calculations that predicted hydrogen in an oxygen vacancy forms multicenter bonds and acts as a shallow donor.