ABSTRACT
The role of graphene in mediating the exchange interaction is theoretically investigated when placed between two ferromagnetic dielectric materials. The calculation based on a tight-binding model illustrates that the magnetic interactions at the interfaces affect not only the graphene band structure but also the thermodynamic potential of the system, leading to an effective exchange bias between magnetic layers. The analysis indicates a strong dependence of the exchange bias on the properties of the mediating layer, revealing an efficient mechanism of electrical control even at room temperature.
ABSTRACT
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast with the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of phonon-mediated fluctuation in the electron spin preces-sion and subsequent spin phase diffusion. Specifically, we consider modulations in the longitudinal g factor and hyperfine interaction induced by the phonon-assisted transitions between the lowest electronic states. Prominent differences in the temperature and magnetic field dependence between the proposed mechanism and the spin-flip transitions are expected to facilitate its experimental verification. Numerical estimation demonstrates highly efficient spin relaxation in typical semiconductor quantum dots.