A flexible insulator of a hollow SiO2 sphere and polyimide hybrid for flexible OLEDs.

The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) not only requires flexible materials with a low dielectric constant, but also ones that possess the electrical, thermal, chemical, and mechanical properties required for optimal device performance. Porous polymer-silica hybrid materials were prepared to satisfy these requirements. Hollow SiO2 spheres were synthesized using atomic layer deposition (ALD) and a thermal calcination process. The hybrid film, which consists of hollow SiO2 spheres and polyimide, shows a low dielectric constant of 1.98 and excellent thermal stability up to 500 °C. After the bending test for 50 000 cycles, the porous hybrid film exhibits no degradation in its dielectric constant or leakage current. These results indicate that the hybrid film made up of hollow SiO2 spheres and polyimide (PI) is useful as a flexible insulator with a low dielectric constant and high thermal stability for flexible OLEDs.

Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation.

Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al2O3 barrier film. As a result, the OLEDs with a SiO/Al2O3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al2O3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al2O3 bilayer film was 0.0033 g/(m(2) day), 2.3 times lower than the rate of a single Al2O3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.