High energy density in artificial heterostructures through relaxation time modulation.

Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.

Toxoplasma gondii IST suppresses inflammatory and apoptotic responses by inhibiting STAT1-mediated signaling in IFN-γ/TNF-α-stimulated hepatocytes.

The dense granule protein of Toxoplasma gondii, inhibitor of signal transducer and activator of transcription 1 (IST) is an inhibitor of signal transducer and activator of transcription 1 (STAT1) transcriptional activity that binds to STAT1 and regulates the expression of inflammatory molecules in host cells. A sterile inflammatory liver injury in pathological acute liver failures occurs when excessive innate immune function, such as the massive release of IFN-γ and TNF-α, is activated without infection. In relation to inflammatory liver injury, we hypothesized that Toxoplasma gondii inhibitor of STAT1 transcription (TgIST) can inhibit the inflammatory response induced by activating the STAT1/IRF-1 mechanism in liver inflammation. This study used IFN-γ and TNF-α as inflammatory inducers at the cellular level of murine hepatocytes (Hepa-1c1c7) to determine whether TgIST inhibits the STAT1/IRF-1 axis. In stable cells transfected with TgIST, STAT1 expression decreased with a decrease in interferon regulatory factor (IRF)-1 levels. Furthermore, STAT1 inhibition of TgIST resulted in lower levels of NF-κB and COX2, as well as significantly lower levels of class II transactivator (CIITA), iNOS, and chemokines (CLXCL9/10/11). TgIST also significantly reduced the expression of hepatocyte proapoptotic markers (Caspase3/8/9, P53, and BAX), which are linked to sterile inflammatory liver injury. TgIST also reduced the expression of adhesion (ICAM-1 and VCAM-1) and infiltration markers of programmed death-ligand 1 (PD-L1) induced by hepatocyte and tissue damage. TgIST restored the cell apoptosis induced by IFN-γ/TNF-α stimulation. These results suggest that TgIST can inhibit STAT1-mediated inflammatory and apoptotic responses in hepatocytes stimulated with proinflammatory cytokines.

Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.

Negative-differential-resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multivalued logic computing. Nevertheless, conventional approaches aimed at attaining the NDR phenomenon involve intricate junction configurations and/or external doping processes in the channel region, impeding the progress of NDR devices to the circuit and system levels. Here, an NDR device is presented that incorporates a channel without junctions. The NDR phenomenon is achieved by introducing a metal-insulator-semiconductor capacitor to a portion of the channel area. This approach establishes partial potential barrier and well that effectively restrict the movement of hole and electron carriers within specific voltage ranges. Consequently, this facilitates the implementation of both a ternary inverter and a ternary static-random-access-memory, which are essential components in the development of multivalued logic computing technology.

Stimuli-responsive nanoparticle self-assembly at complex fluid interfaces: a new insight into dynamic surface chemistry.

The self-assembly of core/shell nanoparticles (NPs) at fluid interfaces is a rapidly evolving area with tremendous potential in various fields, including biomedicine, display devices, catalysts, and sensors. This review provides an in-depth exploration of the current state-of-the-art in the programmed design of stimuli-responsive NP assemblies, with a specific focus on inorganic core/organic shell NPs below 100 nm for their responsive adsorption properties at fluid and polymer interfaces. The interface properties, such as ligands, charge, and surface chemistry, play a significant role in dictating the forces and energies governing both NP-NP and NP-hosting matrix interactions. We highlight the fundamental principles governing the reversible surface chemistry of NPs and present detailed experimental examples in the following three key aspects of stimuli-responsive NP assembly: (i) stimuli-driven assembly of NPs at the air/liquid interface, (ii) reversible NP assembly at the liquid/liquid interface, including films and Pickering emulsions, and (iii) hybrid NP assemblies at the polymer/polymer and polymer/water interfaces that exhibit stimuli-responsive behaviors. Finally, we address current challenges in existing approaches and offer a new perspective on the advances in this field.

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.

Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality. A total of six layers of transistor and memristor arrays were vertically integrated into a 3D nanosystem to perform AI tasks, by peeling and stacking of AI processing layers made from bottom-up synthesized two-dimensional materials. This fully monolithic-3D-integrated AI system substantially reduces processing time, voltage drops, latency and footprint due to its densely packed AI processing layers with dense interlayer connectivity. The successful demonstration of this monolithic-3D-integrated AI system will not only provide a material-level solution for hetero-integration of electronics, but also pave the way for unprecedented multifunctional computing hardware with ultimate parallelism.

Non-epitaxial single-crystal 2D material growth by geometric confinement.

Two-dimensional (2D) materials and their heterostructures show a promising path for next-generation electronics1-3. Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. Here we introduce a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. We geometrically confine the growth of the first set of nuclei by defining a selective growth area via patterning SiO2 masks on two-inch substrates. Owing to substantial reduction of the growth duration at the micrometre-scale SiO2 trenches, we obtain wafer-scale single-domain monolayer WSe2 arrays on the arbitrary substrates by filling the trenches via short growth of the first set of nuclei, before the second set of nuclei is introduced, thus without requiring epitaxial seeding. Further growth of transition metal dichalcogenides with the same principle yields the formation of single-domain MoS2/WSe2 heterostructures. Our achievement will lay a strong foundation for 2D materials to fit into industrial settings.

Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices.

Ever since the invention of solid-state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi-valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal-oxide-semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, the recent achievements toward the development of compact MVL unit devices are reviewed. First, basic principles of MVL technologies are introduced by describing methods of obtaining multiple logic states and discussing radix-related aspects of MVL computation. Next, MVL unit devices are classified and overviewed with emphasis on principles of operation, technologies, and applications. Finally, a comparative discussion of strengths and weaknesses is provided for each class of MVL devices, and the review concludes with the outlook for the MVL field.

PTEN/AKT signaling pathway related to hTERT downregulation and telomere shortening induced in Toxoplasma GRA16-expressing colorectal cancer cells.

This study investigated whether the molecular mechanism of granule protein 16 (GRA16), a dense granule protein of Toxoplasma gondii (T. gondii) that induces cancer cell apoptosis, results in telomere shortening in cancer cells. The molecular mechanism of GRA16 responsible for regulating telomerase reverse transcriptase (hTERT) activity and telomere shortening was investigated using GRA16-transferred HCT116 human colorectal cancer cells (GRA16-stable cells). GRA16 directly decreased hTERT expression by downregulating the expression and phosphorylation of hTERT transcriptional factors accompanied by decreased expression of shelterin complex molecules. Moreover, GRA16 resulted in cancer cell death through reduction of telomerase activity which leads to telomere shortening (decreased relative ratio of telomeric repeat-amplified sequence to that of a single-copy gene) (T/S ratio)), and at the same time gamma-H2A histone family member X (γ-H2A.X) stained nucleus was increased in the cells. The molecular mechanism between GRA16 and hTERT inactivation was revealed using inhibitors for phosphatase and tensin homolog (PTEN) and protein phosphatase 2A (PP2A) as well as siRNAs against PTEN and PP2A. hTERT dephosphorylation was induced effectively by the signaling pathway of HAUSP/PTEN/p-AKT(S473) but not by PP2A-B55/p-AKT(T308). Inhibition of the PTEN signaling pathway increased mRNA expressions in hTERT transcriptional factors, cell cycle activating factors, and apoptosis-inhibiting factors. When HCT116 cells were infected with T. gondii, the number of γ-H2A.X-stained nuclei also increased and p-hTERT/hTERT decreased as in GRA16-stable cells. Altogether, our results emphasize that GRA16 is a novel promising telomerase inhibitor that causes telomere shortening through telomerase inactivation by inducing the activation of the tumor suppressor PTEN.

A Van Der Waals Reconfigurable Multi-Valued Logic Device and Circuit Based on Tunable Negative-Differential-Resistance Phenomenon.

Multi-valued logic (MVL) technology that utilizes more than two logic states has recently been reconsidered because of the demand for greater power saving in current binary logic systems. Extensive efforts have been invested in developing MVL devices with multiple threshold voltages by adopting negative differential transconductance and resistance. In this study, a reconfigurable, multiple negative-differential-resistance (m-NDR) device with an electric-field-induced tunability of multiple threshold voltages is reported, which comprises a BP/ReS2 heterojunction and a ReS2 /h-BN/metal capacitor. Tunability for the m-NDR phenomenon is achieved via the resistance modulation of the ReS2 layer by electrical pulses applied to the capacitor region. Reconfigurability is verified in terms of the function of an MVL circuit composed of a reconfigurable m-NDR device and a load transistor, wherein staggered-type and broken-type double peak-NDR device operations are adopted for ternary inverter and latch circuits, respectively.

Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks.

For valence change memory (VCM)-type synapses, a large number of vacancies help to achieve very linearly changed dynamic range, and also, the low activation energy of vacancies enables low-voltage operation. However, a large number of vacancies increases the current of artificial synapses by acting like dopants, which aggravates low-energy operation and device scalability. Here, mixed-dimensional formamidinium bismuth iodides featuring in-situ formed type-I band structure are reported for the VCM-type synapse. As compared to the pure 2D and 0D phases, the mixed phase increases defect density, which induces a better dynamic range and higher linearity. In addition, the mixed phase decreases conductivity for non-paths despite a large number of defects providing lots of conducting paths. Thus, the mixed phase-based memristor devices exhibit excellent potentiation/depression characteristics with asymmetricity of 3.15, 500 conductance states, a dynamic range of 15, pico ampere-scale current level, and energy consumption per spike of 61.08 aJ. A convolutional neural network (CNN) simulation with the Canadian Institute for Advanced Research-10 (CIFAR-10) dataset is also performed, confirming a maximum recognition rate of approximately 87%. This study is expected to lay the groundwork for future research on organic bismuth halide-based memristor synapses usable for a neuromorphic computing system.

A Wearable All-Gel Multimodal Cutaneous Sensor Enabling Simultaneous Single-Site Monitoring of Cardiac-Related Biophysical Signals.

The human cutaneous sensory organ is a highly evolved biosensor that is efficient, sensitive, selective, and adaptable. Recently, with the development of various materials and structures inspired by sensory organs, artificial cutaneous sensors have been widely studied. In this study, the acquisition of biophysical signals is demonstrated at one point on the body using a wearable all-gel-integrated multimodal sensor composed of four element sensors, inspired by the slow/rapid adapting functions of the skin sensory receptors. The gel-type sensors ensure flexibility, compactness, portability, adherence, and integrity. The wearable all-gel multimodal sensor is easily attached to the wrist and simultaneously gathers blood pressure (BP), electrocardiogram (ECG), electromyogram (EMG), and mechanomyogram (MMG) signals related to cardiac and muscle health. Human activity causes muscle contraction, which affects blood flow; therefore, the relationship between the muscle and heart is crucial for screening and predicting heart health. Cardiac health is monitored by obtaining the two types of phase time differences (i.e., Δtbe : BP and ECG, Δtem : ECG and MMG) generated during muscle movement. The suggested multimodal sensor has potential applicability in monitoring biophysical conditions and diagnosing cardiac-related health problems.

Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.

Recently, three-terminal synaptic devices, which separate read and write terminals, have attracted significant attention because they enable nondestructive read-out and parallel-access for updating synaptic weights. However, owing to their structural features, it is difficult to address the relatively high device density compared with two-terminal synaptic devices. In this study, a vertical synaptic device featuring remotely controllable weight updates via e-field-dependent movement of mobile ions in the ion-gel layer is developed. This synaptic device successfully demonstrates all essential synaptic characteristics, such as excitatory/inhibitory postsynaptic current (E/IPSC), paired-pulse facilitation (PPF), and long-term potentiation/depression (LTP/D) by electrical measurements, and exhibits competitive LTP/D characteristics with a dynamic range (Gmax /Gmin ) of 31.3, and asymmetry (AS) of 8.56. The stability of the LTP/D characteristics is also verified through repeated measurements over 50 cycles; the relative standard deviations (RSDs) of Gmax /Gmin and AS are calculated as 1.65% and 0.25%, respectively. These excellent synaptic properties enable a recognition rate of ≈99% in the training and inference tasks for acoustic and emotional information patterns. This study is expected to be an important foundation for the realization of future parallel computing networks for energy-efficient and high-speed data processing.

Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption.

Flexible and transparent artificial synapses with extremely low energy consumption have potential for use in brain-like neuromorphic electronics. However, most of the transparent materials for flexible memristive artificial synapses were reported to show picojoule-scale high energy consumption with kiloohm-scale low resistance, which limits the scalability for parallel operation. Here, we report on a flexible memristive artificial synapse based on Cs3Cu2I5 with energy consumption as low as 10.48 aJ (= 10.48 × 10-18 J) µm-2 and resistance as high as 243 MΩ for writing pulses. Interface-type resistive switching at the Schottky junction between p-type Cu3Cs2I5 and Au is verified, where migration of iodide vacancies and asymmetric carrier transport owing to the effective hole mass is three times heavier than effective electron mass are found to play critical roles in controlling the conductance, leading to high resistance. There was little difference in synaptic weight updates with high linearity and 250 states before and after bending the flexible device. Moreover, the MNIST-based recognition rate of over 90% is maintained upon bending, indicative of a promising candidate for highly efficient flexible artificial synapses.

Flexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation.

We propose a flexible artificial synapse based on a silicon-indium-zinc-oxide (SIZO)/ion gel hybrid structure directly fabricated on a polyimide substrate, where the channel conductance is effectively modulated via ion movement in the ion gel. This synaptic operation is possible because of the low-temperature deposition process of the SIZO layer (<150°C) and the surface roughness improvement of the poly(4-vinylphenol) buffer layer (12.29→1.81 nm). The flexible synaptic device exhibits extremely stable synaptic performance under high mechanical (bending 1500 times with a radius of 5 mm) and electrical stress (application of voltage pulses 104 times) without any degradation. Last, a sensory-neuromorphic system for sign language translation, which consists of stretchable resistive sensors and flexible artificial synapses, is designed and successfully evaluated via training and recognition simulation using hand sign patterns obtained by stretchable sensors (maximum recognition rate, 99.4%).

A Bioinspired Stretchable Sensory-Neuromorphic System.

Conventional stretchable electronics that adopt a wavy design, a neutral mechanical plane, and conformal contact between abiotic and biotic interfaces have exhibited diverse skin-interfaced applications. Despite such remarkable progress, the evolution of intelligent skin prosthetics is challenged by the absence of the monolithic integration of neuromorphic constituents into individual sensing and actuating components. Herein, a bioinspired stretchable sensory-neuromorphic system, comprising an artificial mechanoreceptor, artificial synapse, and epidermal photonic actuator is demonstrated; these three biomimetic functionalities correspond to a stretchable capacitive pressure sensor, a resistive random-access memory, and a quantum dot light-emitting diode, respectively. This system features a rigid-island structure interconnected with a sinter-free printable conductor, which is optimized by controlling the evaporation rate of solvent (≈160% stretchability and ≈18 550 S cm-1 conductivity). Devised design improves both areal density and structural reliability while avoiding the thermal degradation of heat-sensitive stretchable electronic components. Moreover, even in the skin deformation range, the system accurately recognizes various patterned stimuli via an artificial neural network with training/inferencing functions. Therefore, the new bioinspired system is expected to be an important step toward implementing intelligent wearable electronics.

An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network.

Optogenetics refers to a technique that uses light to modulate neuronal activity with a high spatiotemporal resolution, which enables the manipulation of learning and memory functions in the human brain. This strategy of controlling neuronal activity using light can be applied for the development of intelligent systems, including neuromorphic and in-memory computing systems. Herein, a flexible van der Waals (vdW) optoelectronic synapse is reported, which is a core component of optogenetics-inspired intelligent systems. This synapse is fabricated on 2D vdW layered rhenium disulfide (ReS2 ) that features an inherent photosensitive memory nature derived from the persistent photoconductivity (PPC) effect, successfully mimicking the dynamics of biological synapses. Based on first-principles calculations, the PPC effect is identified to originate from sulfur vacancies in ReS2 that have an inherent tendency to form shallow defect states near the conduction band edges and under optical excitation lead to large lattice relaxation. Finally, the feasibility of applying the synapses in optogenetics-inspired intelligent systems is demonstrated via training and inference tasks for the CIFAR-10 dataset using a convolutional neural network composed of vdW optoelectronic synapse devices.

Two-Dimensional MXene Synapse for Brain-Inspired Neuromorphic Computing.

MXenes, an emerging class of two-dimensional (2D) transition metal carbides and nitrides, have attracted wide attention because of their fascinating properties required in functional electronics. Here, an atomic-switch-type artificial synapse fabricated on Ti3 C2 Tx MXene nanosheets with lots of surface functional groups, which successfully mimics the dynamics of biological synapses, is reported. Through in-depth analysis by X-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy, it is found that the synaptic dynamics originated from the gradual formation and annihilation of the conductive metallic filaments on the MXene surface with distributed functional groups. Subsequently, via training and inference tasks using a convolutional neural network for the Canadian-Institute-For-Advanced-Research-10 dataset, the applicability of the artificial MXene synapse to hardware neural networks is demonstrated.

Self-Powered, Stretchable, and Wearable Ion Gel Mechanoreceptor Sensors.

Mechanoreceptors in human skin are important and efficient cutaneous sensors that are highly sensitive, selective, and adaptive to the environment. Among these, Merkel disk (MD) and cilia are capable of sensing an external mechanical force through a receptor with a sharp pillar-like structure at its end. Then, the signal of the action potential is generated by pumping Na+ ions through ion channels. In this study, a self-powered, stretchable, and wearable gel mechanoreceptor sensor is developed inspired by the structural features of the MD and cilia with sharp tips and the signaling characteristics of mechanoreceptor ion migration. Poly(vinylidene fluoride-co-trifluoroethylene) gel is used to implement a self-powered system, and polyvinylchloride-based elastic gel is utilized to detect sensing signals based on charge transfer and distribution. The surface of all gels is that of a conical structure to achieve high sensor sensitivity and conformal contact with a target surface. In addition, using the developed sensors, various biological signals related to pressure/strain occurring in the human body (e.g., blood pressure (BP), muscle movement, and motion) are acquired. Furthermore, the behavior of arterial BP was investigated during the contraction and relaxation of the muscles.

Reduction of Amyloid Burden by Proliferated Homeostatic Microglia in Toxoplasma gondii-Infected Alzheimer's Disease Model Mice.

In this study, we confirmed that the number of resident homeostatic microglia increases during chronic Toxoplasma gondii infection. Given that the progression of Alzheimer's disease (AD) worsens with the accumulation of amyloid ß (Aß) plaques, which are eliminated through microglial phagocytosis, we hypothesized that T. gondii-induced microglial proliferation would reduce AD progression. Therefore, we investigated the association between microglial proliferation and Aß plaque burden using brain tissues isolated from 5XFAD AD mice (AD group) and T. gondii-infected AD mice (AD + Toxo group). In the AD + Toxo group, amyloid plaque burden significantly decreased compared with the AD group; conversely, homeostatic microglial proliferation, and number of plaque-associated microglia significantly increased. As most plaque-associated microglia shifted to the disease-associated microglia (DAM) phenotype in both AD and AD + Toxo groups and underwent apoptosis after the lysosomal degradation of phagocytosed Aß plaques, this indicates that a sustained supply of homeostatic microglia is required for alleviating Aß plaque burden. Thus, chronic T. gondii infection can induce microglial proliferation in the brains of mice with progressed AD; a sustained supply of homeostatic microglia is a promising prospect for AD treatment.

Ferroelectric polymer-based artificial synapse for neuromorphic computing.

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far. Here, we investigated the effects by (i) the formation temperature of the ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and (ii) the nature of the contact metals (Ti, Cr, Pd) of the FeFET on the operating performance of a FeFET-based artificial synapse in terms of various synaptic performance indices. Excellent ferroelectric properties were induced by maximizing the size and coverage ratio of the ß-phase domains by annealing the P(VDF-TrFE) film at 140 °C. A metal that forms a relatively high barrier improved the dynamic range and nonlinearity by suppressing the contribution of the tunneling current to the post-synaptic current. Subsequently, we studied the influence of the synaptic characteristics on the training and recognition tasks by using two MNIST datasets (fashion and handwritten digits) and the multi-layer perceptron concept of neural networks.