High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography.

Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process.

Hierarchical Self-Assembly of Thickness-Modulated Block Copolymer Thin Films for Controlling Nanodomain Orientations inside Bare Silicon Trenches.

We study the orientation and ordering of nanodomains of a thickness-modulated lamellar block copolymer (BCP) thin film at each thickness region inside a topological nano/micropattern of bare silicon wafers without chemical pretreatments. With precise control of the thickness gradient of a BCP thin film and the width of a bare silicon trench, we successfully demonstrate (i) perfectly oriented lamellar nanodomains, (ii) pseudocylindrical nanopatterns as periodically aligned defects from the lamellar BCP thin film, and (iii) half-cylindrical nanostructure arrays leveraged by a trench sidewall with the strong preferential wetting of the PMMA block of the BCP. Our strategy is simple, efficient, and has an advantage in fabricating diverse nanopatterns simultaneously compared to conventional BCP lithography utilizing chemical pretreatments, such as a polymer brush or a self-assembled monolayer (SAM). The proposed self-assembly nanopatterning process can be used in energy devices and biodevices requiring various nanopatterns on the same device and as next-generation nanofabrication processes with minimized fabrication steps for low-cost manufacturing techniques.