ABSTRACT
The manufacture of high-power diode laser systems highly depends on the quality of the collimation of semiconductor laser diodes. The collimation process is conducted by precise alignment of micro-optics, where the first and the most critical step is the placement of the fast axis collimator (FAC) lens. The sub-micron positioning of the FAC lens is conventionally conducted with an active alignment strategy by monitoring changes in the laser beam profile with an external sensitive camera. The optimization of the beam profile characteristics is controlled by a specifically programmed motorized robotic aligner. However, active alignment, a very accurate method, often results in a higher cycle time than the passive approach, where the lens is placed in a pre-measured position. Here, we developed a new active approach, without closed loop control to position the micro-optics, that relies on the use of a pretrained convolutional network (CNN). We trained and evaluated three CNNs that can predict the optimal lens position using the single camera image of the laser beam. We predict that implementation of the best performing CNN-based model would lead to a decrease in alignment time from tens of seconds to hundreds of milliseconds and will be broadly applied in a high-volume manufacturing environment.
ABSTRACT
Wafer-level probing of photonic integrated circuits is key to reliable process control and efficient performance assessment in advanced production workflows. In recent years, optical probing of surface-coupled devices such as vertical-cavity lasers, top-illuminated photodiodes, or silicon photonic circuits with surface-emitting grating couplers has seen great progress. In contrast to that, wafer-level probing of edge-emitting devices with hard-to-access vertical facets at the sidewalls of deep-etched dicing trenches still represents a major challenge. In this paper, we address this challenge by introducing a novel concept of optical probes based on 3D-printed freeform coupling elements that fit into deep-etched dicing trenches on the wafer surface. Exploiting the design freedom and the precision of two-photon laser lithography, the coupling elements can be adapted to a wide variety of mode-field sizes. We experimentally demonstrate the viability of the approach by coupling light to edge-emitting waveguides on different integration platforms such as silicon photonics (SiP), silicon nitride (TriPleX), and indium phosphide (InP). Achieving losses down to 1.9 dB per coupling interface, we believe that 3D-printed coupling elements represent a key step towards highly reproducible wafer-level testing of edge-coupled photonic integrated circuits.
ABSTRACT
We suggest a method for chemical mapping that is based on scanning transmission electron microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The analysis method uses a comparison of intensity normalized with respect to the incident electron beam with intensity calculated employing the frozen lattice approximation. This procedure is validated with an In(0.07)Ga(0.93)N layer with homogeneous In concentration, where the STEM results were compared with energy filtered imaging, strain state analysis and energy dispersive X-ray analysis. Good agreement was obtained, if the frozen lattice simulations took into account static atomic displacements, caused by the different covalent radii of In and Ga atoms. Using a sample with higher In concentration and series of 32 images taken within 42 min scan time, we did not find any indication for formation of In rich regions due to electron beam irradiation, which is reported in literature to occur for the parallel illumination mode. Image simulation of an In(0.15)Ga(0.85)N layer that was elastically relaxed with empirical Stillinger-Weber potentials did not reveal significant impact of lattice plane bending on STEM images as well as on the evaluated In concentration profiles for specimen thicknesses of 5, 15 and 50 nm. Image simulation of an abrupt interface between GaN and In(0.15)Ga(0.85)N for specimen thicknesses up to 200 nm showed that artificial blurring of interfaces is significantly smaller than expected from a simple geometrical model that is based on the beam convergence only. As an application of the method, we give evidence for the existence of In rich regions in an InGaN layer which shows signatures of quantum dot emission in microphotoluminescence spectroscopy experiments.
