ABSTRACT
Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (I ds-V ds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS2) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeSe/n-HfS2 vdWH diode was used as a ternary inverter. The TMD vdWH diode, which can exhibit different band alignments, is a step forward on the road to developing high-performance multifunctional devices in electronics.
ABSTRACT
Nano-hydroxyapatite is being investigated as vital components of implants and dental and tissue engineering devices. It is found as a bone replacement due to its non-toxicity and cytocompatibility with dental tissues and bone. The reality that nanocrystalline hydroxyapatite can be made of porous granules and scaffolds. Additionally, it has a massive loading potential indicating its use as a transporter for drugs or a regulated drug release mechanism in pharmaceutical research. This review aims to present existing nano-hydroxyapatite research developments as a drug carrier employed in bone tissue disorders locally and deliver poorly soluble drugs with reduced bioavailability. We have discussed the nano-hydroxyapatite role in the delivery of drugs (i.e. anti-resorptive, anti-cancer, and antibiotics), proteins, genetic material, and radionuclides.
