Two Birds with One Stone: Prelithiated Two-Dimensional Nanohybrids as High-Performance Anode Materials for Lithium-Ion Batteries.

As an inexpensive and naturally abundant two-dimensional (2D) material, molybdenum disulfide (MoS2) exhibits a high Li-ion storage capacity along with a low volume expansion upon lithiation, rendering it an alternative anode material for lithium-ion batteries (LIBs). However, the challenge of using MoS2-based anodes is their intrinsically low electrical conductivity and unsatisfied cycle stability. To address the above issues, we have exploited a wet chemical technique and integrated MoS2 with highly conductive titanium carbide (Ti3C2) MXene to form a 2D nanohybrid. The binary hybrids were then subjected to an n-butyllithium (n-Buli) treatment to induce both MoS2 deep phase transition and MXene surface functionality modulation simultaneously. We observed a substantial increase in 1T-phase MoS2 content and a clear suppression of -F-containing functional groups in MXene due to the prelithiation process enabled by the n-Buli treatment. Such an approach not only increases the overall network conductivity but also improves Li-ion diffusion kinetics. As a result, the MoS2/Ti3C2 composite with n-Buli treatment delivered a high Li-ion storage capacity (540 mA h g-1 at 100 mA g-1), outstanding cycle stability (up to 300 cycles), and excellent rate capability. This work provides an effective strategy for the structure-property engineering of 2D materials and sheds light on the rational design of high-performance LIBs using 2D-based anode materials.

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors.

Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic refrigeration effect with an effective electron temperature of ∼145 K in the monolayer MoS2, which enables the transport factor lowering and thus the steep-slope switching (across for three decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 µA/µm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the potential of a 2D Dirac-source cold electron transistor as a steep-slope transistor concept for future energy-efficient nanoelectronics.

Diode-Like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride.

2D semiconductors such as monolayer molybdenum disulfide (MoS2 ) are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts, which limit the performance potential for practical device applications. In this work, 2D monolayer hexagonal boron nitride (h-BN) is exploited as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and an innovative device architecture is designed as a platform to reveal a novel diode-like selective enhancement of the carrier transport through the MIS contact. The contact resistance is significantly reduced when the electrons are transported from the semiconductor to the metal, but is barely affected when the electrons are transported oppositely. A concept of carrier collection barrier is proposed to interpret this intriguing phenomenon as well as a negative Schottky barrier height obtained from temperature-dependent measurements, and the critical role of the collection barrier at the drain end is shown for the overall transistor performance.

Enhanced carrier transport by transition metal doping in WS2 field effect transistors.

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1-3 orders of magnitude, and consequently elevate electron mobilities by 5-7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.

Approaching completely continuous centimeter-scale graphene by copolymer-assisted transfer.

Transferring graphene from copper foil to a target substrate should ideally be a nondestructive process, but cracks, holes, and wrinkles have proved difficult to prevent. Here we report a method in which we use a commercially available copolymer in addition to poly(methylmethacrylate) (PMMA) to obtain 99.8% continuous centimeter-scale transferred graphene. Our findings are based on characterization using Raman spectroscopy, quantitative image analysis, scanning electron microscopy, and terahertz time-domain spectroscopy. Compared to conventional methods, this copolymer-assisted approach not only results in fewer holes, but also effectively eliminates cracks and wrinkles. We attribute this to a more thorough relaxation of the initially deposited PMMA by solvent contained in the thicker copolymer layer. This results in improved contact at the PMMA-graphene interface before removal of the underlying copper substrate.