ABSTRACT
Resistivity, ρ(T), and magnetoresistance (MR) are investigated in graphene grown on SiC (0 0 0 1), at temperatures between T ~ 4-85 K in pulsed magnetic fields of B up to 30 T. According to the Raman spectroscopy and Kelvin-probe microscopy data, the material is a single-layer graphene containing ~20% double-layer islands with a submicron scale and relatively high amount of intrinsic defects. The dependence of ρ(T) exhibits a minimum at temperature T m ~ 30 K. The low-field Hall data have yielded a high electron concentration, n R ≈ 1.4 × 1013 cm-2 connected to intrinsic defects, and a mobility value of µ H ~ 300 cm2 (Vs)-1 weakly depending on T. Analysis of the Shubnikov-de Haas oscillations of MR, observed between B ~ 10-30 T, permitted to establish existence of the Berry phase ß ≈ 0.55 and the cyclotron mass, m c ≈ 0.07 (in units of the free electron mass) close to expected values for the single-layer graphene, respectively. MR at 4.2 K is negative up to B ~ 9 T, exhibiting a minimum near 3 T. Analysis of MR within the whole range of B = 0-10 T below the onset of the SdH effect has revealed three contributions, connected to (i) the classical MR effect, (ii) the weak localization, and (iii) the electron-electron interaction. Analysis of the ρ(T) dependence has confirmed the presence of the contributions (ii) and (iii), revealing a high importance of the electron-electron scattering. As a result, characteristic relaxation times were obtained; an important role of the spin-orbit interaction in the material has been demonstrated, too.
ABSTRACT
Shubnikov-de Haas (SdH) effect and magnetoresistance measurements of single crystals of diluted II-V magnetic semiconductors (Cd1-x-y Zn x Mn y )3As2 (x + y = 0.4, y = 0.04 and 0.08) are investigated in the temperature range T = 4.2 ÷ 300 K and in transverse magnetic field B = 0 ÷ 25 T. The values of the cyclotron mass m c, the effective g-factor g*, and the Dingle temperature T D are defined. In one of the samples (y = 0.04) a strong dependence of the cyclotron mass on the magnetic field m c(B) = m c(0) + αB is observed. The value of a phase shift close to ß = 0.5 indicates the presence of Berry phase and 3D Dirac fermions in a single crystals of (Cd1-x-y Zn x Mn y )3As2 in one of the samples (y = 0.08).
ABSTRACT
Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x = 0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x = 0.47. Magnetoresistance (MR) of CZTGeSe with x = 0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x = 0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B = 0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) [Formula: see text] B (2) is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x = 0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.
