High efficiency reflective waveplates in the midwave infrared.

We demonstrate a high efficiency reflective waveplate which exhibits incidence angle dependent phase shift tuning capabilities in the midwave infrared. Using Finite Difference Time Domain (FDTD) modeling, the phase shift and reflection efficiency are simulated for a variety of geometrical parameters, the results of which are then employed to optimize design. Devices were fabricated and both the polarization and efficiency characteristics were measured and compared to FDTD simulations showing excellent agreement. Further, the potential for scalability to other wavelength ranges and the capability to generate an arbitrary phase shift are explored to demonstrate the versatility of our design.

All-semiconductor negative-index plasmonic absorbers.

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.

Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities.

We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

Fabrication of a nanostructure thermal property measurement platform.

Measurements of the electrical and thermal transport properties of one-dimensional nanostructures (e.g. nanotubes and nanowires) are typically obtained without detailed knowledge of the specimen's atomic-scale structure or defects. To address this deficiency, we have developed a microfabricated, chip-based characterization platform that enables both transmission electron microscopy (TEM) of the atomic structure and defects as well as measurement of the thermal transport properties of individual nanostructures. The platform features a suspended heater line that physically contacts the center of a suspended nanostructure/nanowire that was placed using in situ scanning electron microscope nanomanipulators. Suspension of the nanostructure across a through-hole enables TEM characterization of the atomic and defect structure (dislocations, stacking faults, etc) of the test sample. This paper explains, in detail, the processing steps involved in creating this thermal property measurement platform. As a model study, we report the use of this platform to measure the thermal conductivity and defect structure of a GaN nanowire.

Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb.

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0 degrees to 35 degrees in 5 degrees steps. A fundamental resonance shift of approximately 123 cm-1 (1.4 microm) is observed by varying the doping from 1 x 10(16) to 2 x 10(18) cm(-3). The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.

Active control and spatial mapping of mid-infrared propagating surface plasmons.

Periodic arrays of subwavelength apertures in metal films have been shown to exhibit strongly enhanced transmission at wavelengths determined by the periodicity of the film as well as the optical properties of the metal and surrounding dielectric material. Here we investigate the coupling between such a grating and a Quantum Cascade Laser. By actively tuning the optical properties of our grating, we control the coupling of laser light to the plasmonic structure, switching our grating from a predominantly transmitting state to a state that allows coupling to propagating surface waves, which can then be imaged on the metallic surface.

Loss mechanisms in mid-infrared extraordinary optical transmission gratings.

The optical properties of periodic arrays of subwavelength apertures in metal films on GaAs substrates are studied. Specifically, geometric and material losses for these plasmonic structures are characterized using angular dependent transmission, normal incidence reflection, and angular dependent diffraction experiments, in addition to a crossed-polarizer transmission experiment. The optical properties of the samples as a function of engineered material losses are studied. Using this comprehensive approach to the characterization of the plasmonic structures, we are able to identify and isolate specific loss mechanisms, as well as identify the effect of free carriers on the optical properties of the structures.

A plasmonic terahertz detector with a monolithic hot electron bolometer.

A plasmonic terahertz detector that integrates a voltage-controlled planar barrier into a grating gated GaAs/AlGaAs high electron mobility transistor has been fabricated and experimentally characterized. The plasmonic response at fixed grating gate voltage has a full width at half-maximum of 40 GHz at ∼405 GHz. Substantially increased responsivity is achieved by introducing an independently biased narrow gate that produces a lateral potential barrier electrically in series with the resonant grating gated region. DC electrical characterization in conjunction with bias-dependent terahertz responsivity and time constant measurements indicate that a hot electron bolometric effect is the dominant response mechanism at 20 K.

Picosecond time-resolved two-dimensional ballistic electron transport.

Time-resolved transport of ballistic electrons in a two-dimensional electron gas has been measured with a resolution of less than 5 ps. This was accomplished by using picosecond electrical pulses to launch electrons from the emitter of a transverse magnetic focusing structure and optoelectronically sampling the collector voltage. Both plasma resonances and the ballistic transport signal are clearly resolved. The transit time appears to be somewhat longer than expected from simple Fermi velocity considerations.