Bright Single-Photon Source at 1.3 µm Based on InAs Bilayer Quantum Dot in Micropillar.

A pronounced high count rate of single-photon emission at the wavelength of 1.3 µm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 µm) cavity of distributed Bragg reflectors was investigated, whose photon extraction efficiency has achieved 3.3%. Cavity mode and Purcell enhancement have been observed clearly in microphotoluminescence spectra. At the detection end of Hanbury-Brown and Twiss setup, the two avalanched single-photon counting modules record a total count rate of ~62,000/s; the time coincidence counting measurement demonstrates single-photon emission, with the multi-photon emission possibility, i.e., g 2(0), of only 0.14.

Large optical Stark shifts in single quantum dots coupled to core-shell GaAs/AlGaAs nanowires.

Nanowire quantum dots (NW-QDs) can be used for future compact and efficient optoelectronic devices. Many efforts have been made to control the QD states by inserting the QDs in doped structures and applying an electric field in a nanowire system. In this paper, we use down-conversion and up-conversion photoluminescence excitations to explore the optical and electronic properties of single quantum dots in GaAs/AlGaAs core-shell nanowires. We investigate a large optical Stark shift in this system as a new method to tune the QD states. When the tunable laser lies within the spectral bandwidth of ZB/WZ GaAs (780 nm-860 nm), we observe an extremely large optical Stark shift of 1.3 nm (0.5 nm) with increasing excitation power at a resonant wavelength of 800 nm (840 nm) in GaAs states. The ability to in situ control the energy states of self-catalyzed NW-QDs should open a new way for quantum light sources and nonlinear optics in a nanowire system.

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 µm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g (2)(0) < 0.5 which demonstrates a pure single-photon emission.

In situ probing and integration of single self-assembled quantum dots-in-nanowires for quantum photonics.

The realization of fiber-output single photon sources is necessary for quantum photonics. Here we present in situ probing and integration of single self-assembled quantum dots (QDs)-in-nanowires. Single self-assembled AlGaAs QDs were synthesized in GaAs/AlGaAs core-shell nanowires by molecular beam epitaxy and characterized by optical excitation in both micro-PL and fiber-integrating set-up. Cascaded biexciton-exciton emission with a saturation signal of 1000 counts per second at nitrogen temperature is achieved through the fiber-integrating setup, which makes single mode fibers an ideal candidate for single photons sources and paves the way for the realization of 'all fiber' devices. Numerical calculations were carried out to illustrate the collection efficiency and polarized photoluminescence characteristics. Extraction efficiencies as high as 70% over a broadband emission are reported and increase by a factor of about seven in comparison with air extraction, due to the larger refractive index of the fiber core.

Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy.

Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures with designed properties. Herein, we demonstrate the morphological tailoring of self-assembled nanostructures on faceted GaAs nanowires (NWs). The NWs are deposited on different kinds of substrates. Triangular and hexagonal prism morphologies are obtained, and their corresponding {110} sidewalls act as platforms for the nucleation of gallium droplets (GDs). We demonstrate that the morphologies of the nanostructures depend not only on the annealing conditions but also on the morphologies of the NWs' sidewalls. Here, we achieve morphological engineering in the form of novel quantum dots (QDs), 'square' quantum rings (QRs), 'rectangular' QRs, 3D QRs, crescent-shaped QRs, and nano-antidots. The evolution mechanisms for the peculiar morphologies of both NWs and nanostructures are modeled and discussed in detail. This work shows the potential of combining nano-structural engineering with NWs to achieve multifunctional properties and applications.

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications.

Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.

We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 µeV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.