Broadband phase shifter based on SiN-MoS2 integrated racetrack resonator.

As the critical device of microwave photonics and optical communication, the low-loss and high-efficiency optical phase shifter has attracted intense attention in photonic integrated circuits. However, most of their applications are restricted to a particular band. Little is known about the characteristics of broadband. In this paper, an SiN-MoS2 integrated broadband racetrack phase shifter is demonstrated. The coupling region and the structure of the racetrack resonator are elaborately designed to improve the coupling efficiency at each resonance wavelength. The ionic liquid is introduced to form a capacitor structure. Then, the effective index of the hybrid waveguide can be efficiently tuned by adjusting the bias voltage. We achieve a phase shifter with a tunable range covering all the WDM bands and even up to 1900 nm. The highest phase tuning efficiency is measured to be 72.75 pm/V at 1860 nm, and the corresponding half-wave-voltage-length product is calculated as 0.0608 V·cm.

Nonlinear optical response of inverse-designed integrated photonic devices.

Gradient-based optimization combined with the adjoint method has been demonstrated to be an efficient way to design a nano-structure with a vast number of degrees of freedom. However, most inverse-designed photonic devices are applied as linear photonic devices. Here, we demonstrate the nonlinear optical response in inverse-designed integrated splitters fabricated on a SiN platform. The splitting ratio is tunable under different incident powers. The thermo-optical effect can be used as an effective approach for adjusting the nonlinear optical response threshold and modulation depth of the device. These promising results indicate the great potential of inverse-designed photonic devices in nonlinear optics and optical communications.

MoS2 hybrid integrated micro-ring resonator phase shifter based on a silicon nitride platform.

We demonstrate a low-power, compact micro-ring phase shifter based on hybrid integration with atomically thin two-dimensional layered materials, and experimentally establish a low-loss silicon nitride platform. Using a wet transfer method, a large-area few-layer MoS2 film is hybrid integrated with a micro-ring phase shifter, leading to a tuning efficiency of 5.8 pm V-1 at a center wavelength of 1545.294 nm and a half-wave-voltage-length product as low as 0.09 V cm. Our device is designed to provide a hybrid-integration-based active phase modulation scheme for integrated optical communication networks with large-cross-section silicon nitride waveguides.