A Transferrable, Adaptable, Free-Standing, and Water-Resistant Hyperbolic Metamaterial.

Hyperbolic metamaterials (HMMs) have attracted significant attention due to the profound manipulation of the photonic density of states, resulting in the efficient optoelectronic devices with the enhanced light-matter interaction. HMMs are conventionally built on rigid large-size substrates with poor conformability and the absence of flexibility. Here, we demonstrate a grating collageable HMM (GCHMM), which is composed of eight alternating layers of Au and poly(methyl methacrylate) (PMMA) and PMMA grating nanostructure containing quantum dots (QDs). The QDs serve as a scattering gain medium performing a random laser action, and the grating nanostructure enhances the extraction of light from QDs. The GCHMM enhances laser action by 13 times, reduces lasing threshold by 46%, and increases differential quantum efficiency by 1.8 times as compared to a planar collageable HMM. In addition, the GCHMM can be retransferred multiple times to other substrates as well as provide sufficient protection in water and still retain an excellent performance. It also shows stable functionality even when transferred to a dental floss. The GCHMM, therefore, promises to become a versatile platform for foldable, adaptable, free-standing, and water-resistant optoelectronic device applications.

Nanoscale Core-Shell Hyperbolic Structures for Ultralow Threshold Laser Action: An Efficient Platform for the Enhancement of Optical Manipulation.

Plasmonic material has emerged with multifunctionalities for its remarkable tailoring light emission, reshaping density of states (DOS), and focusing subwavelength light. However, restricted by its propagation loss and narrowband resonance in nature, it is a challenge for plasmonic material to provide a broadband DOS to advance its application. Here, we develop a novel nanoscale core-shell hyperbolic structure that possesses a remarkable coupling effect inside the multishell nanoscale composite owing to a higher DOS and a longer time of collective oscillations of the electrons than the plasmonic-based pure-metal nanoparticles. Subsequently, a giant localized electromagnetic wave of surface plasmon resonance is formed at the surface, causing pronounced out-coupling effect. Specifically, the nanoscale core-shell hyperbolic structure confines the energy well without being decayed, reducing the propagation loss and then achieving an unprecedented stimulated emission (random lasing action by dye molecule) with a record ultralow threshold (∼30 µJ/cm2). Besides, owing to the radial symmetry of the nanoscale core-shell hyperbolic structure, the excitation of high wavevector modes and induced additional DOS are easily accessible. We believe that the nanoscale core-shell hyperbolic structure paves a way to enlarge the development of plasmonic-based applications, such as high optoelectronic conversion efficiency of solar cells, great power extraction of light-emitting diodes, wide spectra photodetectors, carrying the emitter inside the core part as quantitative fluorescence microscopy and bioluminescence imaging system for in vivo and in vitro research on human body.

A Highly-Efficient Single Segment White Random Laser.

Production of multicolor or multiple wavelength lasers over the full visible-color spectrum from a single chip device has widespread applications, such as superbright solid-state lighting, color laser displays, light-based version of Wi-Fi (Li-Fi), and bioimaging, etc. However, designing such lasing devices remains a challenging issue owing to the material requirements for producing multicolor emissions and sophisticated design for producing laser action. Here we demonstrate a simple design and highly efficient single segment white random laser based on solution-processed NaYF4:Yb/Er/Tm@NaYF4:Eu core-shell nanoparticles assisted by Au/MoO3 multilayer hyperbolic meta-materials. The multicolor lasing emitted from core-shell nanoparticles covering the red, green, and blue, simultaneously, can be greatly enhanced by the high photonic density of states with a suitable design of hyperbolic meta-materials, which enables decreasing the energy consumption of photon propagation. As a result, the energy upconversion emission is enhanced by ∼50 times with a drastic reduction of the lasing threshold. The multiple scatterings arising from the inherent nature of the disordered nanoparticle matrix provide a convenient way for the formation of closed feedback loops, which is beneficial for the coherent laser action. The experimental results were supported by the electromagnetic simulations derived from the finite-difference time-domain (FDTD) method. The approach shown here can greatly simplify the design of laser structures with color-tunable emissions, which can be extended to many other material systems. Together with the characteristics of angle free laser action, our device provides a promising solution toward the realization of many laser-based practical applications.

Transient and Flexible Hyperbolic Metamaterials on Freeform Surfaces.

Transient technology is deemed as a paramount breakthrough for its particular functionality that can be implemented at a specific time and then totally dissolved. Hyperbolic metamaterials (HMMs) with high wave-vector modes for negative refraction or with high photonic density of states to robustly enhance the quantum transformation efficiency represent one of the emerging key elements for generating not-yet realized optoelectronics devices. However, HMMs has not been explored for implementing in transient technology. Here we show the first attempt to integrate transient technology with HMMs, i.e., transient HMMs, composed of multilayers of water-soluble and bio-compatible polymer and metal. We demonstrate that our newly designed transient HMMs can also possess high-k modes and high photonic density of states, which enables to dramatically enhance the light emitter covered on top of HMMs. We show that these transient HMMs devices loss their functionalities after immersing into deionized water within 5 min. Moreover, when the transient HMMs are integrated with a flexible substrate, the device exhibits an excellent mechanical stability for more than 3000 bending cycles. We anticipate that the transient HMMs developed here can serve as a versatile platform to advance transient technology for a wide range of application, including solid state lighting, optical communication, and wearable optoelectronic devices, etc.

Deep-Ultraviolet Hyperbolic Metacavity Laser.

Given the high demand for miniaturized optoelectronic circuits, plasmonic devices with the capability of generating coherent radiation at deep subwavelength scales have attracted great interest for diverse applications such as nanoantennas, single photon sources, and nanosensors. However, the design of such lasing devices remains a challenging issue because of the long structure requirements for producing strong radiation feedback. Here, a plasmonic laser made by using a nanoscale hyperbolic metamaterial cube, called hyperbolic metacavity, on a multiple quantum-well (MQW), deep-ultraviolet emitter is presented. The specifically designed metacavity merges plasmon resonant modes within the cube and provides a unique resonant radiation feedback to the MQW. This unique plasmon field allows the dipoles of the MQW with various orientations into radiative emission, achieving enhancement of spontaneous emission rate by a factor of 33 and of quantum efficiency by a factor of 2.5, which is beneficial for coherent laser action. The hyperbolic metacavity laser shows a clear clamping of spontaneous emission above the threshold, which demonstrates a near complete radiation coupling of the MQW with the metacavity. This approach shown here can greatly simplify the requirements of plasmonic nanolaser with a long plasmonic structure, and the metacavity effect can be extended to many other material systems.

A White Random Laser.

Random laser with intrinsically uncomplicated fabrication processes, high spectral radiance, angle-free emission, and conformal onto freeform surfaces is in principle ideal for a variety of applications, ranging from lighting to identification systems. In this work, a white random laser (White-RL) with high-purity and high-stability is designed, fabricated, and demonstrated via the cost-effective materials (e.g., organic laser dyes) and simple methods (e.g., all-solution process and self-assembled structures). Notably, the wavelength, linewidth, and intensity of White-RL are nearly isotropic, nevertheless hard to be achieved in any conventional laser systems. Dynamically fine-tuning colour over a broad visible range is also feasible by on-chip integration of three free-standing monochromatic laser films with selective pumping scheme and appropriate colour balance. With these schematics, White-RL shows great potential and high application values in high-brightness illumination, full-field imaging, full-colour displays, visible-colour communications, and medical biosensing.

Self-textured oxide structure for improved performance of 365 nm ultraviolet vertical-type light-emitting diodes.

High performance 365 nm vertical-type ultraviolet light-emitting diodes (LEDs) are demonstrated by the insertion of a self-textured oxide mask (STOM) structure using metal-organic chemical vapor deposition. The dislocation densities were reduced significantly via the STOM by the observation of the transmission electron microcopy image. Under an injection current of 20 mA, a 50% light output power enhancement was achieved, representing an enhancement of 35.4% in light extraction efficiency and injected electron efficiency of the LED with STOM in comparison to that without STOM. At 350 mA, the light output power of the STOM-LEDs was approximately 24.4% higher. Measurements of the optical and electrical properties of the LED showed that the corrugated STOM structure improved the light scattering and reflection which increased the light output, and also enhanced the current spreading to intensify radiative recombination.

Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications.

Growth of hexagonal GaN on Si(100) templates via pulsed laser deposition (PLD) was investigated for the further development of GaN-on-Si technology. The evolution of the GaN growth mechanism at various growth times was monitored by SEM and TEM, which indicated that the GaN growth mode changes gradually from island growth to layer growth as the growth time increases up to 2 hours. Moreover, the high-temperature operation (1000 °C) of the PLD meant no significant GaN meltback occurred on the GaN template surface. The completed GaN templates were subjected to MOCVD treatment to regrow a GaN layer. The results of X-ray diffraction analysis and photoluminescence measurements show not only the reliability of the GaN template, but also the promise of the PLD technique for the development of GaN-on-Si technology.

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

GaN light emitting diodes with wing-type imbedded contacts.

A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.

High thermal stability of high indium content InGaN films grown by pulsed laser deposition.

Thermal stability on the structural and optical properties of high indium content InGaN films grown using pulsed laser deposition (PLD) was investigated through long-duration and high-temperature annealing. X-ray diffraction and cathode- luminescence measurements of the 33% indium InGaN revealed no differences in the line-shape and peak position even after annealing at 800°C for 95 min; similar structural stability was found for the 60% samples after annealing for 75 min. The higher thermal stability is attributed to nanoscale InN domains with different orientations create mixed-polarity InGaN/InN interfaces, resulting in higher activation energies at interfaces and increasing the thermal stability of the material. Furthermore, the InGaN films were subjected to metalorganic chemical vapor deposition treatment to regrow a GaN layer; results are promising for the development of high thermal stability InGaN films using the PLD technique.

High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode.

The experimental demonstrations of light-emitting diode (LED) fabrication with surface plasmon (SP) coupling with the radiating dipoles in its quantum wells are first reviewed. The SP coupling with a radiating dipole can create an alternative emission channel through SP radiation for enhancing the effective internal quantum efficiency when the intrinsic non-radiative recombination rate is high, reducing the external quantum efficiency droop effect at high current injection levels, and producing partially polarized LED output by inducing polarization-sensitive SP for coupling. Then, we report the theoretical and numerical study results of SP-dipole coupling based on a simple coupling model between a radiating dipole and the SP induced on a nearby Ag nanoparticle (NP). To include the dipole strength variation effect caused by the field distribution built in the coupling system (the feedback effect), the radiating dipole is represented by a saturable two-level system. The spectral and dipole-NP distance dependencies of dipole strength variation and total radiated power enhancement of the coupling system are demonstrated and interpreted. The results show that the dipole-SP coupling can enhance the total radiated power. The enhancement is particularly effective when the feedback effect is included and hence the dipole strength is increased.

A GaN photonic crystal membrane laser.

The implementation of a series of optically pumped GaN photonic crystal (PhC) membrane lasers is demonstrated at room temperature. The photonic crystal is composed of a scalene-triangular arrangement of circular holes in GaN. Three defect structures are fabricated for comparing their lasing characteristics with those of perfect PhC. It is observed that all the lasing defect modes have lasing wavelengths very close to the band-edge modes in the perfect PhC structure. Although those lasing modes, including band-edge and defect modes, have different optical pump thresholds, different lasing spectral widths, different quality factors (Q factors), and different polarization ratios, all their polarization distributions show maxima in the directions around one of the hole arrangement axes. The similar lasing characteristics between the band-edge and defect modes are attributed to the existence of extremely narrow partial band gaps for forming the defect modes. Also, the oriented polarization properties are due to the scalene-triangle PhC structure. In one of the defect lasing modes, the lasing threshold is as low as 0.82 mJ cm(-2), the cavity Q factor is as large as 1743, and the polarization ratio is as large as 25.4. Such output parameters represent generally superior lasing behaviors when compared with previously reported implementations of similar laser structures.