Correction: Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds.

Correction for 'Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds' by L. Fernandez et al., Nanoscale, 2020, 12, 22258-22267, DOI: 10.1039/D0NR04964F.

Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds.

One-atom-thick rare-earth/noble metal (RE-NM) compounds are attractive materials to investigate two-dimensional magnetism, since they are easy to synthesize into a common RE-NM2 structure with high crystal perfection. Here we perform a comparative study of the GdAu2, HoAu2, and YbAu2 monolayer compounds grown on Au(111). We find the same atomic lattice quality and moiré superlattice periodicity in the three cases, but different electronic properties and magnetism. The YbAu2 monolayer reveals the characteristic electronic signatures of a mixed-valence configuration in the Yb atom. In contrast, GdAu2 and HoAu2 show the trivalent character of the rare-earth and ferromagnetic transitions below 22 K. Yet, the GdAu2 monolayer has an in-plane magnetic easy-axis, versus the out-of-plane one in HoAu2. The electronic bands of the two trivalent compounds are very similar, while the divalent YbAu2 monolayer exhibits different band features. In the latter, a strong 4f-5d hybridization is manifested in neatly resolved avoided crossings near the Fermi level. First principles theory points to a residual presence of empty 4f states, explaining the fluctuating valence of Yb in the YbAu2 monolayer.

Topologization of ß-antimonene on Bi2Se3 via proximity effects.

Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of ß-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although ß-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of ß-antimonene is found to be driven by the hybridization of the bands from either side of the interface.

Synthesis of mesoscale ordered two-dimensional π-conjugated polymers with semiconducting properties.

Two-dimensional materials with high charge carrier mobility and tunable band gaps have attracted intense research effort for their potential use in nanoelectronics. Two-dimensional π-conjugated polymers constitute a promising subclass because the band structure can be manipulated by varying the molecular building blocks while preserving key features such as Dirac cones and high charge mobility. The major barriers to the application of two-dimensional π-conjugated polymers have been the small domain size and high defect density attained in the syntheses explored so far. Here, we demonstrate the fabrication of mesoscale ordered two-dimensional π-conjugated polymer kagome lattices with semiconducting properties, Dirac cone structures and flat bands on Au(111). This material has been obtained by combining a rigid azatriangulene precursor and a hot dosing approach, which favours molecular diffusion and eliminates voids in the network. These results open opportunities for the synthesis of two-dimensional π-conjugated polymer Dirac cone materials and their integration into devices.

Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study.

We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(1 0 5) surface which is the main strained face found on Ge/Si(0 0 1) quantum dots and is considered a prototypical model system for surface strain relaxation in heteroepitaxial growth. Using a vicinal surface as a model system for obtaining a stable single-domain film structure with large terraces and rebonded-step surface termination, we realized an extended and ordered Ge/Si planar hetero-junction suitable for direct study with angle-resolved photoemission spectroscopy. At the coverage of four Ge monolayers photoemission spectroscopy reveals the presence of 2D surface and film bands displaying energy-momentum dispersion compatible with the 5 × 4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.

Evidence of ß-antimonene at the Sb/Bi2Se3 interface.

We report a study of the interface between antimony and the prototypical topological insulator Bi2Se3. Scanning tunnelling microscopy measurements show the presence of ordered domains displaying a perfect lattice match with bismuth selenide. Density functional theory calculations of the most stable atomic configurations demonstrate that the ordered domains can be attributed to stacks of ß-antimonene.

Spin-polarized confined states in Ag films on Fe(1 1 0).

Spin- and angle-resolved photoemission spectroscopy of thin Ag(1 1 1) films on ferromagnetic Fe(1 1 0) shows a series of spin-polarized peaks. These features derive from Ag sp-bands, which form quantum well states and resonances due to confinement by a spin-dependent interface potential barrier. The spin-up states are broader and located at higher binding energy than the corresponding spin-down states at [Formula: see text], although the differences attenuate near the Fermi level. The spin-down states display multiple gap openings, which interrupt their parabolic-like dispersion. First-principles calculations attribute these findings to the symmetry- and spin-selective hybridization of the Ag states with the exchange-split bands of the substrate.

Signature of surface periodicity in the electronic structure of Si(1 1 1)-(7 × 7).

The surface electronic structure of Si(1 1 1)-[Formula: see text] has been studied by angle-resolved photo electron spectroscopy. Replicas of the S 1 surface state are found in correspondence with several [Formula: see text] unit cells in the reciprocal space. This observation resolves in a direct way the long-standing dichotomy between the structural and electronic properties of the system previously discussed on the basis of the [Formula: see text] or [Formula: see text] R30° surface models.

Interface electronic structure at the topological insulator-ferrimagnetic insulator junction.

An interface electron state at the junction between a three-dimensional topological insulator film, Bi2Se3, and a ferrimagnetic insulator film, Y3Fe5O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film.

Interplay between electronic and structural properties in the Pb/Ag(1 0 0) interface.

We report an investigation of the structural and electronic properties of a Pb monolayer (ML) grown on Ag(1 0 0), by combining x-ray photoelectron diffraction (XPD) and angle resolved photoelectron spectroscopy (ARPES). The Pb atoms are found to arrange in a pseudo-hexagonal adlayer commensurate to the underlying square Ag substrate, resulting in a coincidence cell with c([Formula: see text]) periodicity. The electronic structure of the Pb ML in proximity of the Fermi level consists in three p-derived bands, which show different degrees of hybridization with the substrate for their different orbital characters. In particular, we report that the p xy states disperse without forming energy gap, in contrast to previous ARPES studies of the Pb ML on different metallic substrates. We attribute the absence of energy gap to the commensurability between substrate and adlayer, resulting in a higher two-dimensionality of the Pb ML.

Spectroscopic signatures of an ordered array of independent Ag heptamers.

A periodic network of Ag heptamers forms on the carburized W(1 1 0)-R(15 × 12) surface, upon deposition of sub-monolayer amounts of Ag. We investigate the electronic structure and dimensionality of this system by angle-resolved photoemission spectroscopy. The observation of very well-defined Ag 4d-levels confirms the highly ordered growth of size-selected Ag nano-particles on the W(1 1 0)-R(15 × 12) template. The absence of energy dispersion of these states indicates negligible coupling among the Ag heptamers, and points out the local character of the heptamer-substrate interaction. The system can be described as an array of Ag heptamers with fully confined Ag 4d-levels.

Coexistence of multiple silicene phases in silicon grown on Ag(1 1 1).

Silicene, the silicon equivalent of graphene, is attracting increasing scientific and technological attention in view of the exploitation of its exotic electronic properties. This novel material has been theoretically predicted to exist as a free-standing layer in a low-buckled, stable form, and can be synthesized by the deposition of Si on appropriate crystalline substrates. By employing low-energy electron diffraction and microscopy, we have studied the growth of Si on Ag(1 1 1) and observed a rich variety of rotationally non-equivalent silicene structures. Our results highlight a very complex formation diagram, reflecting the coexistence of different and nearly degenerate silicene phases, whose relative abundance can be controlled by varying the Si coverage and growth temperature. At variance with other studies, we find that the formation of single-phase silicene monolayers cannot be achieved on Ag(1 1 1).

Controlling the topology of Fermi surfaces in metal nanofilms.

The properties of metal crystals are governed by the electrons of the highest occupied states at the Fermi level and determined by Fermi surfaces, the Fermi energy contours in momentum space. Topological regulation of the Fermi surface has been an important issue in synthesizing functional materials, which we found to be realized at room temperature in nanometer-thick films. Reducing the thickness of a metal thin film down to its electron wavelength scale induces the quantum size effect and the electronic system changes from three to two-dimensional, transforming the Fermi surface topology. Such an ultrathin film further changes its topology through one-dimensional (1D) structural deformation of the film when it is grown on a 1D substrate. In particular, when the interface has 1D metallic bands, the system is additionally stabilized by forming an electron energy gap by hybridization between 1D states of the film and substrate.

Electronic states of moiré modulated Cu films.

We examined by low-energy electron diffraction and scanning tunneling microscopy the surface of thin Cu films on Pt(111). The Cu/Pt lattice mismatch induces a moiré modulation for films from 3 to about 10 ML thickness. We used angle-resolved photoemission spectroscopy to examine the effects of this structural modulation on the electronic states of the system. A series of hexagonal- and trigonal-like constant energy contours is found in the proximity of the Cu(111) zone boundaries. These electronic patterns are generated by Cu sp-quantum well state replicas, originating from multiple points of the reciprocal lattice associated with the moiré superstructure. Layer-dependent strain relaxation and hybridization with the substrate bands concur to determine the dispersion and energy position of the Cu Shockley surface state.

Electronic structure study of ultrathin Ag(111) films modified by a Si(111) substrate and √3 × âˆš3-Ag2Bi surface.

Angle-resolved photoemission spectroscopy experiments show that the electronic structure of a Ag(111) film grown on Si(111) is markedly perturbed by the formation of a √3 × âˆš3-Ag(2)Bi Rashba-type surface alloy. Four spin-split surface states, with different band dispersions and energy contours, intercept and hybridize selectively with the sp-derived quantum well states of the Ag layer. Detailed two-dimensional band mapping of the system was carried out and constant energy contours at different energies result in hexagonal-, star- and flower-like distortions of the quantum well states as a result of various interactions. Further wavy-like modulations of the electronic structure of the film are found to originate from umklapp reflections of the Ag film states according to the surface periodicity.

Highly anisotropic Dirac cones in epitaxial graphene modulated by an island superlattice.

We present a new method to engineer the charge carrier mobility and its directional asymmetry in epitaxial graphene by using metal cluster superlattices self-assembled onto the moiré pattern formed by graphene on Ir(111). Angle-resolved photoemission spectroscopy reveals threefold symmetry in the band structure associated with strong renormalization of the electron group velocity close to the Dirac point giving rise to highly anisotropic Dirac cones. We further find that the cluster superlattice also affects the spectral-weight distribution of the carbon bands as well as the electronic gaps between graphene states.