ABSTRACT
Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes.
ABSTRACT
Organic-inorganic halide perovskites have demonstrated significant light detection potential, with a performance comparable to that of commercially available photodetectors. In this study, a general design guideline, which is applicable to both inverted and regular structures, is proposed for high-performance perovskite photodiodes through an interfacial built-in electric field (E) for efficient carrier separation and transport. The interfacial E generated at the interface between the active and charge transport layers far from the incident light is critical for effective charge carrier collection. The interfacial E can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post-annealing time and temperature. Employing the proposed design guideline, the inverted and regular perovskite photodiodes exhibit the external quantum efficiency of 83.51% and 76.5% and responsivities of 0.37 and 0.34 A W-1 , respectively. In the self-powered mode, the dark currents reach 7.95 × 10-11 and 1.47 × 10-8 A cm-2 , providing high detectivities of 7.34 × 1013 and 4.96 × 1012 Jones, for inverted and regular structures, respectively, and a long-term stability of at least 1600 h. This optimization strategy is compatible with existing materials and device structures and hence leads to substantial potential applications in perovskite-based optoelectronic devices.
