Strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors.

Stretchable neuromorphic optoelectronics present tantalizing opportunities for intelligent vision applications that necessitate high spatial resolution and multimodal interaction. Existing neuromorphic devices are either stretchable but not reconcilable with multifunctionality, or discrete but with low-end neurological function and limited flexibility. Herein, we propose a defect-tunable viscoelastic perovskite film that is assembled into strain-insensitive quasi-continuous microsphere morphologies for intrinsically stretchable neuromorphic vision-adaptive transistors. The resulting device achieves trichromatic photoadaptation and a rapid adaptive speed (<150 s) beyond human eyes (3 ~ 30 min) even under 100% mechanical strain. When acted as an artificial synapse, the device can operate at an ultra-low energy consumption (15 aJ) (far below the human brain of 1 ~ 10 fJ) with a high paired-pulse facilitation index of 270% (one of the best figures of merit in stretchable synaptic phototransistors). Furthermore, adaptive optical imaging is achieved by the strain-insensitive perovskite films, accelerating the implementation of next-generation neuromorphic vision systems.

A detachable interface for stable low-voltage stretchable transistor arrays and high-resolution X-ray imaging.

Challenges associated with stretchable optoelectronic devices, such as pixel size, power consumption and stability, severely brock their realization in high-resolution digital imaging. Herein, we develop a universal detachable interface technique that allows uniform, damage-free and reproducible integration of micropatterned stretchable electrodes for pixel-dense intrinsically stretchable organic transistor arrays. Benefiting from the ideal heterocontact and short channel length (2 µm) in our transistors, switching current ratio exceeding 106, device density of 41,000 transistors/cm2, operational voltage down to 5 V and excellent stability are simultaneously achieved. The resultant stretchable transistor-based image sensors exhibit ultrasensitive X-ray detection and high-resolution imaging capability. A megapixel image is demonstrated, which is unprecedented for stretchable direct-conversion X-ray detectors. These results forge a bright future for the stretchable photonic integration toward next-generation visualization equipment.

Biomimetic nanocluster photoreceptors for adaptative circular polarization vision.

Nanoclusters with atomically precise structures and discrete energy levels are considered as nanoscale semiconductors for artificial intelligence. However, nanocluster electronic engineering and optoelectronic behavior have remained obscure and unexplored. Hence, we create nanocluster photoreceptors inspired by mantis shrimp visual systems to satisfy the needs of compact but multi-task vision hardware and explore the photo-induced electronic transport. Wafer-scale arrayed photoreceptors are constructed by a nanocluster-conjugated molecule heterostructure. Nanoclusters perform as an in-sensor charge reservoir to tune the conductance levels of artificial photoreceptors by a light valve mechanism. A ligand-assisted charge transfer process takes place at nanocluster interface and it features an integration of spectral-dependent visual adaptation and circular polarization recognition. This approach is further employed for developing concisely structured, multi-task, and compact artificial visual systems and provides valuable guidelines for nanocluster neuromorphic devices.

Molecular Design of Multifunctional Integrated Polymer Semiconductors with Intrinsic Stretchability, High Mobility, and Intense Luminescence.

Multifunctional semiconductors integrating unique optical, electrical, mechanical, and chemical characteristics are critical to advanced and emerging manufacturing technologies. However, due to the trade-off challenges in design principles, fabrication difficulty, defects in existing materials, etc., realizing multiple functions through multistage manufacturing is quite taxing. Here, an effective molecular design strategy is established to prepare a class of multifunctional integrated polymer semiconductors. The pyridal[1,2,3]triazole-thiophene co-structured tetrapolymers with full-backbone coplanarity and considerable inter/intramolecular noncovalent interactions facilitate short-range order and excellent (re)organization capability of polymer chains, providing stress-dissipation sites in the film state. The regioregular multicomponent conjugated backbones contribute to dense packing, excellent crystallinity, high crack onset strain over 100%, efficient carrier transport with mobilities exceeding 1 cm2  V-1  s-1 , and controllable near-infrared luminescence. Furthermore, a homologous blending strategy is proposed to further enhance the color-tunable luminescent properties of polymers while effectively retaining mechanical and electrical properties. The blended system exhibits excellent field-effect mobility (µ) and quantum yield (Φ), reaching a record Φ · µ of 0.43 cm2  V-1  s-1 . Overall, the proposed strategy facilitates a rational design of regioregular semicrystalline intrinsically stretchable polymers with high mobility and color-tunable intense luminescence, providing unique possibilities for the development of multifunctional integrated semiconductors in organic optoelectronics.

Photoinduced Nonvolatile Memory Transistor Based on Lead-Free Perovskite Incorporating Fused π-Conjugated Organic Ligands.

Perovskites field-effect transistors (PeFETs) have been intensively investigated for their application in detector and synapse. However, synapse based on PeFETs is still very difficult to integrate excellent charge carrier transporting ability, photosensitivity, and nonvolatile memory effects into one device, which is very important for developing bionic electronic devices and edge computing. Here, two-dimensional (2D) perovskites are synthesized by incorporating fused π-conjugated pyrene-O-ethyl-ammonium (POE) ligands and a systematic study is conducted to obtain enhanced performance and reliable PeFETs. The optimized (POE)2 SnI4 transistors display the hole mobility over 0.3 cm2  V-1  s-1 , high repeatability, and operational stability. Meanwhile, the derived photo memory devices show remarkable photoresponse, with a switching ratio higher than 105 , high visible light responsivity (>4 × 104  A W-1 ), and stable storage-erase cycles, as well as competitive retention performance (104  s). The photoinduced memory behavior can be benefiting from the insulating nature of quantum-well in 2D perovskite under dark and its excellent light sensitivity. The excellent photo memory behaviors have been maintained after 40 days in a N2 atmosphere. Finally, a 2D perovskite-only transistors with a multi-level memory behavior (16 distinct states) is described by controlling incident light pulse. This work provides broader attention toward 2D perovskite and optoelectronic application.

Van der Waals Multilayer Heterojunction for Low-Voltage Organic RGB Area-Emitting Transistor Array.

Organic light-emitting transistors (OLETs) have garnered considerable attention from academy and industry due to their potential applications in next-generation display technologies, multifunctional devices, and organic electrically pumped lasers. However, overcoming the trade-offs among power consumption, external quantum efficiency (EQE), and uniform area emission remains a long-standing issue for OLETs. Herein, a van der Waals multilayer heterojunction methodology is proposed to enhance the layer-to-layer interfacial interaction and contact, resulting in better dipole shielding, carrier transport, exciton recombination, and current density distribution. The prepared multilayer heterojunction OLET (MLH-OLET) array shows uniform and bright RGB area emission and low operating voltage (<30 V among the lowest applied voltage of reported lateral LETs). Additionally, a high brightness under area emission of 1060 cd m-2 , a high EQE value of 0.85%, and a high loop stability (over 380 cycles, outperforming state-of-the-art OLETs) indicate that the proposed multilayer heterojunction is obviously superior to the reported lateral device configuration. The van der Waals multilayer heterojunction developed for the preparation of OLET arrays sufficiently meets the low-voltage, high-performance, and low-cost requirements of future display technologies.

A Self-Assembled 3D Penetrating Nanonetwork for High-Performance Intrinsically Stretchable Polymer Light-Emitting Diodes.

The emergence of wearable technology can significantly benefit from electronic displays fabricated using intrinsically stretchable (is-) materials. Typically, an improvement in the stretchability of conventional light-emitting polymers is accompanied by a decrease in charge transportability, thus resulting in a significant decrease in device efficiency. In this study, a self-assembled 3D penetrating nanonetwork is developed to achieve increased stretchability and mobility simultaneously, based on high-molecular-weight phenylenevinylene (L-SY-PPV) and polyacrylonitrile (PAN). The mobility of L-SY-PPV/PAN increases by 5-6 times and the stretchability increases from 20% (pristine L-SY-PPV film) to 100%. A high current efficiency (CE) of 8.13 cd A-1 is observed in polymer light-emitting diodes (PLEDs) fabricated using 40% stretched L-SY-PPV/PAN. Furthermore, using a polyethyleneimine ethoxylated (PEIE), an 1,10-phenanthroline monohydrate (pBphen), and a reduced Triton X-100 (TR) chelated Zn-based is- electron-injection layer of Zn-PEIE-pBphen-TR, an is-PLED is realized with a turn-on voltage of 6.5 V and a high CE of 2.35 cd A-1 . These results demonstrate the effectiveness of using the self-assembled 3D penetrating nanonetwork for the fabrication of is-PLEDs.

Optimization design of a Lamb wave device for density sensing of nonviscous liquid.

A Lamb wave device composed of a piezoelectric plate loaded with a nonviscous liquid layer is presented. The relation between the Lamb wave phase velocity and the liquid density can be used for liquid density sensing. In this paper, utilizing the partial wave theory, the concept of effective permittivity is introduced to analyze the Lamb wave's excitation and the phase velocity calculation under a certain liquid density. The interface between the Lamb wave device and the liquid layer is metallized to eliminate the influence of liquid electrical properties when sensing liquid density. Based on the theory model, the phase difference measurement method is adopted to study the device's sensitivity to liquid density. In order to achieve high sensitivity to liquid density with sufficient excitation efficiency of Lamb wave, the optimal parameters of the Lamb wave device including plate thickness and cut orientation are obtained by numerical calculation. The experimental results are found to be in agreement with the theoretical simulations, verifying the validity of the theory model and the practicability of the optimization design.

Evaluating sensor reliability in classification problems based on evidence theory.

This paper presents a new framework for sensor reliability evaluation in classification problems based on evidence theory (or the Dempster-Shafer theory of belief functions). The evaluation is treated as a two-stage training process. First, the authors assess the static reliability from a training set by comparing the sensor classification readings with the actual values of data, which are both represented by belief functions. Information content contained in the actual values of each target is extracted to determine its influence on the evaluation. Next, considering the ability of the sensor to understand a dynamic working environment, the dynamic reliability is evaluated by measuring the degree of consensus among a group of sensors. Finally, the authors discuss why and how to combine these two kinds of reliabilities. A significant improvement using the authors' method is observed in numerical simulations as compared with the recently proposed method.

Eigenvalue and field equations of three-layered uniaxial fibers and their applications to the characteristics of long-period fiber gratings with applied axial strain.

By using the Debye potentials, the exact eigenvalue equations and the corresponding field distributions of the core and cladding modes for three-layered, radially stratified, and dielectric uniaxial optical fibers are derived completely; the modes include TE, TM, and hybrid HE/EH modes. The strain characteristics of long-period fiber gratings' (LPFGs') with applied axial strain are investigated theoretically by studying three-layered uniaxial optical fibers. When uniform axial strain is applied to fiber, the core, and inner and outer cladding become uniaxial crystal optically; that is, the optical axes are parallel to the fiber's axis. Analytic expressions of the strain sensitivities of LPFGs are derived. The analysis reveals that the strain sensitivities of LPFGs based on various cladding modes, including the shift value and direction of the resonance wavelength, differ greatly.

Investigation on SAW properties of LGS and optimal cuts for high-temperature applications.

A promising perspective for surface acoustic wave (SAW) device applications at high temperature has been opened by langasite (LGS). The SAW properties of LGS in singly and doubly rotated cuts at 250 degrees C are investigated. Three noticeable regions for SAW-cut orientations and propagation directions at high temperature are put forward and are defined by Euler angles [0 degrees, 20 degrees --> 50 degrees, 35 degrees --> 45 degrees], [0 degrees, 85 degrees --> 110 degrees, 0 degrees --> 5 degrees], and [0 degrees, 138 degrees --> 145 degrees, 20 degrees --> 23 degrees], respectively. The first region includes zero or comparatively reduced temperature coefficient of delay (TCD) (<2 ppm) and smaller electromechanical coupling factor (K2) (0.2%-0.35%); the second one exhibits higher K2 (0.35%-0.45%) and moderate TCD (<5 ppm); and the highest K2 (>0.45%) and larger TCD (25-30 ppm) characterize the last region. For some typical orientations within the above-mentioned three regions, the temperature dependency of SAW characteristics (up to 1000 degrees C) is discussed. The second region [0 degrees, 85 degrees --> 110 degrees, 0 degrees --> 5 degrees], especially the orientation [0 degrees, 90 degrees, 0 degrees], has better comprehensive characteristics of SAW and is more suitable for high-temperature applications. Therefore, we should give a top priority to the orientation [0 degrees, 90 degrees, 0 degrees] in the design of SAW devices operating at high temperature. Comparison between published experimental results and numerical predictions based on LGS constants and their temperature coefficients available in the literature reveals that the theoretical results of TCD under 250 degrees C are in agreement with the experimental ones (the relative error of TCD is within 10%).

[Sensing scheme of minim liquid density based on Lamb-wave].

This paper presents and discusses the liquid density sensing potential of a delay line Lamb-wave sensor configuration, where Lamb wave is excited only by interdigital transducer (IDT), without membrane when fabricated. An optimized cut orientation and the normalized thickness of substrate by using genetic algorithm is presented to improve the sensitivity of the sensor and to get low noise. Experimental measurements performed on Lamb-wave device fabricated from Y-Z LiNbO3 in a delay line configuration are found to be in agreement with theoretical calculations.