Effects of He and Ar Heat-Assisted Plasma Treatments on the Adhesion Properties of Polytetrafluoroethylene (PTFE).

Heat-assisted plasma (HAP) treatment using He gas is known to improve the adhesive-bonding and adhesive-free adhesion properties of polytetrafluoroethylene (PTFE). In this study, we investigated the effects of He and Ar gaseous species on the HAP-treated PTFE surface. Epoxy (EP) adhesive-coated stainless steel (SUS304) and isobutylene-isoprene rubber (IIR) were used as adherents for the evaluation of the adhesive-bonding and adhesive-free adhesion properties of PTFE. In the case of adhesive bonding, the PTFE/EP-adhesive/SUS304 adhesion strength of the Ar-HAP-treated PTFE was the same as that of the He-HAP-treated PTFE. In the case of adhesive-free adhesion, the PTFE/IIR adhesion strength of the Ar-HAP-treated PTFE was seven times lower than that of the He-HAP-treated PTFE. The relation among gaseous species used in HAP treatment, adhesion properties, peroxy radical density ratio, surface chemical composition, surface modification depth, surface morphology, surface hardness, and the effect of irradiation with vacuum ultraviolet (VUV) and UV photons were investigated. The different adhesive-free adhesion properties obtained by the two treatments resulted from the changes in surface chemical composition, especially the ratios of oxygen-containing functional groups and C-C crosslinks.

Surface Modification and Adhesion Mechanism of Isotactic Polypropylene with Low-Energy Electron-Beam Treatments.

Recently, smaller-size electron-beam (EB) accelerators have offered EB irradiation in laboratory systems. Therefore, polymer surface treatments with low-energy EB have been developed in the past years. For high adhesion strength, low-energy EB treatment is also a promising method in comparison to plasma surface treatment. In the plasma treatment, the mechanism of the effect on the adhesion properties has been proved and the excess treatments led to the formation of a weak boundary layer and reduction of adhesion strength. In contrast, the low-energy EB possesses high penetration ability. In this work, we focused on the surface treatments of isotactic polypropylene (it.PP) with low-energy EB irradiation for adhesion. The dependence of adhesion strength on the absorbed dose of electron beam was evaluated, and the mechanism of electron beam on the adhesion properties was investigated from various perspectives of surface properties and morphology. Compared to that of plasma-treated it.PP, the adhesion strength of it.PP with electron-beam irradiation increased drastically. We proved that the radical was generated in the substrates after electron-beam treatments and would form covalent bonds between adhesives and substrates, which achieved higher adhesion than plasma treatments. In addition, the electron beam reached effectively a deep region from the top surface of the substrates and provided larger adhesion strength.

Surface Modification of Poly(ether ether ketone) through Friedel-Crafts Reaction for High Adhesion Strength.

Poly(ether ether ketone) (PEEK) possesses attractive mechanical and thermal properties but demonstrates poor adhesion. To overcome this disadvantage, in this study, the surface modification of PEEK or PEEK-based carbon-fiber-reinforced thermoplastics (CFRTP) was performed through the Friedel-Crafts reaction and successive epoxidation. Under optimized reaction conditions, surface modification was achieved without surface deterioration, and epoxy groups were introduced. The progress of the Friedel-Crafts reaction and epoxidation was demonstrated by X-ray photoelectron spectroscopy measurements after fluorine labeling through thiol-en reaction and amine addition, respectively. The adhesive strength between CFRTP and epoxy adhesives was increased to 23.5 MPa, and cohesive fracture of epoxy adhesives, rather than interfacial peeling, occurred. In addition, compared with conventional plasma treatment, the durability of the modified surface and thickness of the modified surface layer increased. Therefore, we succeeded in modifying the surface properties through the epoxidation of the PEEK surface.

Drastic Improvement in Adhesion Property of Polytetrafluoroethylene (PTFE) via Heat-Assisted Plasma Treatment Using a Heater.

The heating effect on the adhesion property of plasma-treated polytetrafluoroethylene (PTFE) was examined. For this purpose, a PTFE sheet was plasma-treated at atmospheric pressure while heating using a halogen heater. When plasma-treated at 8.3 W/cm2 without using the heater (Low-P), the surface temperature of Low-P was about 95 °C. In contrast, when plasma-treated at 8.3 W/cm2 while using the heater (Low-P+Heater), the surface temperature of Low-P+Heater was controlled to about 260 °C. Thermal compression of the plasma-treated PTFE with or without heating and isobutylene-isoprene rubber (IIR) was performed, and the adhesion strength of the IIR/PTFE assembly was measured via the T-peel test. The adhesion strengths of Low-P and Low-P+Heater were 0.12 and 2.3 N/mm, respectively. Cohesion failure of IIR occurred during the T-peel test because of its extremely high adhesion property. The surfaces of the plasma-treated PTFE with or without heating were investigated by the measurements of electron spin resonance, X-ray photoelectron spectroscopy, nanoindentation, scanning electron microscopy, and scanning probe microscopy. These results indicated that heating during plasma treatment promotes the etching of the weak boundary layer (WBL) of PTFE, resulting in a sharp increase in the adhesion property of PTFE.

Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching.

Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because a huge amount of the resonator is demanded for installing to various electronic devices. Resonance frequency of the quartz resonator is decided by the thickness of the quartz crystal wafer. Therefore, it is necessary to uniform the thickness distribution of the wafer with nanometric level. We have proposed the improvement technique of the thickness distribution of the quartz crystal wafer by numerically controlled correction using atmospheric pressure plasma which is non-contact and chemical removal technique. Heating effects of the quartz wafer in the removal rate and the correction accuracy were investigated. The heating of the substrate and compensate of the scanning speed of the worktable according to the variation of the surface temperature enabled an increase of 50% in the etching rate and 10-nanometric-level accuracy in the correction of the thickness distribution of the quartz wafer, respectively.

Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching.

A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm without any subsurface damage by applying one correction process. Furthermore, applying a pulse-modulated plasma markedly decreased the correction time of the thickness distribution without breaking the quartz crystal wafer by thermal stress.