ABSTRACT
AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength.
ABSTRACT
We present optitrode, a miniaturized flexible probe for integrated, localized light delivery and electrical recording. This device features an annular light guide with transparent polymer and fused silica layers surrounding a twisted-wire tetrode. We have developed a novel fabrication process, V-groove guided capillary assembly, to achieve high-precision, coaxial alignment of the various layers of the device. Optitrode with a length-to-diameter ratio â¼500 (5 cm long, 100 µm diameter) has been fabricated, and both the electrical and optical functions have been characterized. The prototype can deliver 11% (110 mW) of the total laser power under abrupt bending angle â¼25°.
Subject(s)
Electricity , Light , Optical DevicesABSTRACT
The characteristics of surface acoustic waves (SAW) propagating on a three-layered structure consisting of a perovskite-type ferroelectric film, a buffer layer and a semiconductor substrate have been studied theoretically. Large coupling coefficients (K(2)) can be obtained when the interdigital transducer (IDT) is on top of the perovskite-type ferroelectric film, with (type 4) and without (type 3) the floating-plane electrode at the perovskite-type ferroelectric film-buffer layer interface. In the above cases, the peak values of K (2) Of the Pb(Zr,Ti)O(3) (PZT) films (3.2%-3.8%) are higher than those of the BaTiO(3) (BT) and PbTiO(3) (PT) films. In the IDT configuration of type 4, there exists a minor peak of the coupling coefficients for the PZT and BT films, but not for the PT films when the normalized thickness (hK) of the perovskite-type ferroelectric film is about 0.3. The minor peak values of the coupling coefficients (0.62%-0.93%) for different layered structures (PZT/STO/Si, PZT/MgO/Si, and PZT/MgO/GaAs) all decrease when we increase hK value from 0 to 0.25. The results could be useful in the integration of ferroelectric devices, semiconductor devices, and SAW devices on the same substrate.
ABSTRACT
The effect of an SiO(2) buffer layer on the surface acoustic wave (SAW) properties of ZnO/SiO(2)/GaAs structure is examined. Both theoretical and experimental results show that the coupling coefficient is increased appreciably by providing an SiO(2 ) film between the ZnO film and the GaAs substrate. Adding an SiO (2) film is also beneficial to the promotion of quality of ZnO thin film. The results could be useful for the further development of monolithic SAW devices.
