Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay.

InGaN-based micro-light-emitting diodes have a strong potential as a crucial building block for next-generation displays. However, small-size pixels suffer from efficiency degradations, which increase the power consumption of the display. We demonstrate strategies for epitaxial structure engineering carefully considering the quantum barrier layer and electron blocking layer to alleviate efficiency degradations in low current injection regime by reducing the lateral diffusion of injected carriers via reducing the tunneling rate of electrons through the barrier layer and balanced carrier injection. As a result, the fabricated micro-light-emitting diodes show a high external quantum efficiency of 3.00% at 0.1 A/cm2 for the pixel size of 10 × 10 µm2 and a negligible Jmax EQE shift during size reduction, which is challenging due to the non-radiative recombination at the sidewall. Furthermore, we verify that our epitaxy strategies can result in the relaxation of self-heating of the micro-light-emitting diodes, where the average pixel temperature was effectively reduced.

High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors.

Conventional photon detectors necessarily face critical challenges regarding strong wavelength-selective response and narrow spectral bandwidth, which are undesirable for spectroscopic applications requiring a wide spectral range. With this perspective, herein, we overcome these challenges through a free-carrier absorption-based waveguide-integrated bolometer for infrared spectroscopic sensors on a silicon-on-insulator (SOI) platform featuring a spectrally flat response at near-infrared (NIR) range (1520-1620 nm). An in-depth thermal analysis was conducted with a systematic investigation of geometry dependence on the detectors. We achieved great performances: temperature coefficient of resistance (TCR) of -3.786%/K and sensitivity of -26.75%/mW with a low wavelength dependency, which are record-high values among reported waveguide bolometers so far, to our knowledge. In addition, a clear on-off response with the rise/fall time of 24.2/29.2 µs and a 3-dB roll-off frequency of ∼22 kHz were obtained, sufficient for a wide range of sensing applications. Together with the possibility of expanding an operation range to the mid-infrared (MIR) band, as well as simplicity in the detector architecture, our work here presents a novel strategy for integrated photodetectors covering NIR to MIR at room temperature for the development of the future silicon photonic sensors with ultrawide spectral bandwidth.

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips: publisher's note.

This publisher's note contains a correction to Opt. Lett. 47, 714 (2022).

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips.

We developed an inter-chip optical link using direct optical wire (DOW) bonding by open-to-air polymerization. An arch-shaped wire was drawn from a tip in a similar way to a metal wire, but the wire was formed from a polymer solution that solidified in the air during wiring. The DOW bonding was examined for silicon photonic chips where grating couplers are integrated for input/output coupling. Cone-shaped studs were formed at the ends of the wire, and their geometry was optimized using finite-difference time-domain simulation to give a mode conversion function. Although the polymer wire had a multimode scale of 7 µm, the wire bonding between the grating couplers showed a relatively low insertion loss of 5.8 dB at a wavelength of 1590 nm compared to a conventional connection using single-mode fiber blocks. It also showed a larger wavelength tolerance within the range of ∼1520-1590 nm. DOW bonding between a grating coupler and a single-mode fiber were also examined to verify the feasibility of out-of-plane connection with edge-coupling devices. The grating-to-fiber wire link also exhibited a large wavelength tolerance.

Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors.

In this paper, we systematically investigated tailoring bolometric properties of a proposed heat-sensitive TiOx/Ti/TiOx tri-layer film for a waveguide-based bolometer, which can play a significant role as an on-chip detector operating in the mid-infrared wavelength range for the integrated optical gas sensors on Ge-on-insulator (Ge-OI) platform. As a proof-of-concept, bolometric test devices with a TiOx single-layer and TiOx/Ti/TiOx tri-layer films were fabricated by varying the layer thickness and thermal treatment condition. Comprehensive characterization was examined by the scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses in the prepared films to fully understand the microstructure and interfacial properties and the effects of thermal treatment. Quantitative measurements of the temperature- and time-dependent resistance variations were conducted to deduce the minimum detectable change in temperature (ΔTmin) of the prepared films. Furthermore, based on these experimentally obtained results, limit-of-detection (LoD) for the carbon dioxide gas sensing was estimated to demonstrate the feasibility of the proposed waveguide-based bolometer with the TiOx/Ti/TiOx tri-layer film as an on-chip detector on the Ge-OI platform. It was found that the LoD can reach ∼3.25 ppm and/or even lower with the ΔTmin of 11.64 mK in the device with the TiOx/Ti/TiOx (47/6/47 nm) tri-layer film vacuum-annealed at 400 °C for 15 min, which shows great enhancement of ∼7.7 times lower value compared to the best case of TiOx single-layer films. Our theoretical and experimental demonstration for tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film provides fairly useful insight on how to improve LoD in the integrated optical gas sensor with the bolometer as an on-chip detector.

On-chip monitoring of far-field patterns using a planar diffractor in a silicon-based optical phased array.

We demonstrate the on-chip monitoring of far-field patterns in a silicon-based optical phased array (OPA) using a planar diffractor and traveling-wave photodetectors (PDs) integrated at the end of the radiator array. To reproduce the diffraction patterns within a silicon slab, the planar diffractor is designed with a diffraction region surrounded by an absorptive boundary and seven discrete outlet waveguides. Each outlet waveguide is linked to the photon-assisted tunneling PD which has a silicon p-n junction and is operated under a reverse bias to detect a sub-bandgap wavelength, 1.3 µm. With the 1×16 OPA and seven detectors, the positions of the main beams aligned to specific directions in the free space were clearly monitored.