1.
Micromachines (Basel)
; 10(4)2019 Apr 17.
Article
in English
| MEDLINE
| ID: mdl-30999667
ABSTRACT
A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.