ABSTRACT
The field-emission properties of SnO(2):WO(2.72) hierarchical nanowire heterostructure have been investigated. Nanoheterostructure consisting of SnO(2) nanowires as stem and WO(2.72) nanothorns as branches are synthesized in two steps by physical vapor deposition technique. Their field emission properties were recorded. A low turn-on field of ~0.82 V/µm (to draw an emission current density ~10 µA/cm(2)) is achieved along with stable emission for 4 h duration. The emission characteristic shows the SnO(2):WO(2.72) nanoheterostructures are extremely suitable for field-emission applications.
ABSTRACT
Here, we report the synthesis of vertically aligned gallium sulfide (GaS) nanohorn arrays using simple vapor-liquid-solid (VLS) method. The morphologies of GaS nano and microstructures are tuned by controlling the temperature and position of the substrate with respect to the source material. A plausible mechanism for the controlled growth has been proposed. It is important to note that the turn-on field value of GaS nanohorns array is found to be the low turn-on field 4.2 V/µm having current density of 0.1 µA/cm(2). The striking feature of the field emission behavior of the GaS nanohorn arrays is that the average emission current remains nearly constant over long time without any degradation.
