1.
Opt Express
; 21(9): 11132-40, 2013 May 06.
Article
in English
| MEDLINE
| ID: mdl-23669970
ABSTRACT
In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 µm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.