Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As[Formula: see text]P[Formula: see text] gate layer.

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text]P[Formula: see text]) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As[Formula: see text]P[Formula: see text] energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As[Formula: see text]P[Formula: see text] atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of [Formula: see text] A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.

Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices.

We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.

Helicity-Driven Ratchet Effect Enhanced by Plasmons.

We demonstrate that the ratchet effect-a radiation-induced direct current in periodically modulated structures with built-in asymmetry-is dramatically enhanced in the vicinity of the plasmonic resonances and has a nontrivial polarization dependence. For a circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. In the high-mobility structures, this component might increase by several orders of magnitude due to the plasmonic effects and exceed the current component in the modulation direction. Our theory also predicts that in the dirty systems, where the plasma resonances are suppressed, the ratchet current is controlled by the Maxwell relaxation.

Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays.

We show that the strong amplification of terahertz radiation takes place in an array of field-effect transistors at small DC drain currents due to hydrodynamic plasmon instability of the collective plasmon mode. Planar designs compatible with standard integrated circuit fabrication processes and strong coupling of terahertz radiation to plasmon modes in FET arrays make such arrays very attractive for potential applications in solid-state terahertz amplifiers and emitters.

Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels.

We develop a device model for a heterostructure device with an electron channel and with a periodic system of interdigitated gates. Using this model, we find the conditions of the self-excitation of plasma oscillations in portions of the channel. It is shown that the self-excitation of plasma oscillations in these devices and the terahertz emission observed in the experiments (Otsuji et al 2006 Appl. Phys. Lett. 89 263502; Meziani et al 2007 Appl. Phys. Lett. 90 061105; Otsuji et al 2007 Solid-State Electron. 51 1319) might be attributed to the electron-transit-time effect in the barrier regions.

An ultra-stable non-coherent light source for optical measurements in neuroscience and cell physiology.

We demonstrate that high power light-emitting diodes (LED's) exhibit low-frequency noise characteristics that are clearly superior to those of quartz tungsten halogen lamps, the non-coherent light source most commonly employed when freedom from intensity variation is critical. Their extreme stability over tens of seconds (combined with readily selectable wavelength) makes high power LED's ideal light sources for DC recording of optical changes, from living cells and tissues, that last more than a few hundred milliseconds. These optical signals (DeltaI/I(0)) may be intrinsic (light scattering, absorbance or fluorescence) or extrinsic (absorbance or fluorescence from probe molecules) and we show that changes as small as approximately 8 x 10(-5) can be recorded without signal averaging when LED's are used as monochromatic light sources. Here, rapid and slow changes in the intrinsic optical properties of mammalian peptidergic nerve terminals are used to illustrate the advantages of high power LED's compared to filament bulbs.