Co-Occurrence Fingerprint Data-Based Heterogeneous Transfer Learning Framework for Indoor Positioning.

Distribution discrepancy is an intrinsic challenge in existing fingerprint-based indoor positioning system(s) (FIPS) due to real-time environmental variations; thus, the positioning model needs to be reconstructed frequently based on newly collected training data. However, it is expensive or impossible to collect adequate training samples to reconstruct the fingerprint database. Fortunately, transfer learning has proven to be an effective solution to mitigate the distribution discrepancy, enabling us to update the positioning model using newly collected training data in real time. However, in practical applications, traditional transfer learning algorithms no longer act well to feature space heterogeneity caused by different types or holding postures of fingerprint collection devices (such as smartphones). Moreover, current heterogeneous transfer methods typically require enough accurately labeled samples in the target domain, which is practically expensive and even unavailable. Aiming to solve these problems, a heterogeneous transfer learning framework based on co-occurrence data (HTL-CD) is proposed for FIPS, which can realize higher positioning accuracy and robustness against environmental changes without reconstructing the fingerprint database repeatedly. Specifically, the source domain samples are mapped into the feature space in the target domain, then the marginal and conditional distributions of the source and target samples are aligned in order to minimize the distribution divergence caused by collection device heterogeneity and environmental changes. Moreover, the utilized co-occurrence fingerprint data enables us to calculate correlation coefficients between heterogeneous samples without accurately labeled target samples. Furthermore, by resorting to the adopted correlation restriction mechanism, more valuable knowledge will be transferred to the target domain if the source samples are related to the target ones, which remarkably relieves the "negative transfer" issue. Real-world experimental performance implies that, even without accurately labeled samples in the target domain, the proposed HTL-CD can obtain at least 17.15% smaller average localization errors (ALEs) than existing transfer learning-based positioning methods, which further validates the effectiveness and superiority of our algorithm.

Interpretation of Rubidium-Based Perovskite Recipes toward Electronic Passivation and Ion-Diffusion Mitigation.

Rubidium cation (Rb+ ) addition is witnessed to play a pivotal role in boosting the comprehensive performance of organic-inorganic hybrid perovskite solar cells. However, the origin of such success derived from irreplaceable superiorities brought by Rb+ remains ambiguous. Herein, grain-boundary-including atomic models are adopted for the accurate theoretical analysis of practical Rb+ distribution in perovskite structures. The spatial distribution, covering both the grain interiors and boundaries, is thoroughly identified by virtue of synchrotron-based grazing-incidence X-ray diffraction. On this basis, the prominent elevation of the halogen vacancy formation energy, improved charge-carrier dynamics, and the electronic passivation mechanism in the grain interior are expounded. As evidenced by the increased energy barrier and suppressed microcurrent, the critical role of Rb+ addition in blocking the diffusion pathway along grain boundaries, inhibiting halide phase segregation, and eventually enhancing intrinsic stability is elucidated. Hence, the linkage avalanche effect of occupied location dominated by subtle changes in Rb+ concentration on electronic defects, ion migration, and phase stability is completely investigated in detail, shedding a new light on the advancement of high-efficiency cascade-incorporating strategies and perovskite compositional engineering.

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure.

Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107 ). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

Graphdiyne: Bridging SnO2 and Perovskite in Planar Solar Cells.

The matching of charge transport layer and photoactive layer is critical in solar energy conversion devices, especially for planar perovskite solar cells based on the SnO2 electron-transfer layer (ETL) owing to its unmatched photogenerated electron and hole extraction rates. Graphdiyne (GDY) with multi-roles has been incorporated to maximize the matching between SnO2 and perovskite regarding electron extraction rate optimization and interface engineering towards both perovskite crystallization process and subsequent photovoltaic service duration. The GDY doped SnO2 layer has fourfold improved electron mobility due to freshly formed C-O σ bond and more facilitated band alignment. The enhanced hydrophobicity inhibits heterogeneous perovskite nucleation, contributing to a high-quality film with diminished grain boundaries and lower defect density. Also, the interfacial passivation of Pb-I anti-site defects has been demonstrated via GDY introduction.

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2.

Defect engineering is widely applied in transition metal dichalcogenides (TMDs) to achieve electrical, optical, magnetic, and catalytic regulation. Vacancies, regarded as a type of extremely delicate defect, are acknowledged to be effective and flexible in general catalytic modulation. However, the influence of vacancy states in addition to concentration on catalysis still remains vague. Thus, via high throughput calculations, the optimized sulfur vacancy (S-vacancy) state in terms of both concentration and distribution is initially figured out among a series of MoS2 models for the hydrogen evolution reaction (HER). In order to realize it, a facile and mild H2O2 chemical etching strategy is implemented to introduce homogeneously distributed single S-vacancies onto the MoS2 nanosheet surface. By systematic tuning of the etching duration, etching temperature, and etching solution concentration, comprehensive modulation of the S-vacancy state is achieved. The optimal HER performance reaches a Tafel slope of 48 mV dec-1 and an overpotential of 131 mV at a current density of 10 mA cm-2, indicating the superiority of single S-vacancies over agglomerate S-vacancies. This is ascribed to the more effective surface electronic structure engineering as well as the boosted electrical transport properties. By bridging the gap, to some extent, between precise design from theory and practical modulation in experiments, the proposed strategy extends defect engineering to a more sophisticated level to further unlock the potential of catalytic performance enhancement.

A-Site Management for Highly Crystalline Perovskites.

An in-depth understanding and effective suppression of nonradiative recombination pathways in perovskites are crucial to their crystallization process, in which supersaturation discrepancies at different time scales between CH3 NH3 I (MAI, methylammonium iodide) and PbI2 remain a key issue. Here, an A-site management strategy via the introduction of an A-site placeholder cation, NH4 + , to offset the deficient MA+ precipitation by occupying the cavity of Pb-I framework, is proposed. The temporarily remaining NH4 + is substituted by subsequently precipitated MA+ . The temperature-dependent crystallization process with the generation and consumption of a transient phase is sufficiently demonstrated by the dynamic changes in crystal structure characteristic peaks through in situ grazing-incidence X-ray diffraction and the surface potential difference evolution through temperature-dependent Kelvin probe force microscopy. A highly crystalline perovskite is consequently acquired, indicated by the enlarged grain size, lowered nonradiative defect density, prolonged carrier lifetime, and fluorescence lifetime imaging. Most importantly, it is identified that the A-site IMA defect is responsible for such crystal quality optimization based on theoretical calculations, transient absorption, and deep-level transient spectroscopy. Furthermore, the universality of the proposed A-site management strategy is demonstrated with other mixed-cation perovskite systems, indicating that this methodology successfully provides guidance for synthesis route design of highly crystalline perovskites.

Graphene-Based Mixed-Dimensional van der Waals Heterostructures for Advanced Optoelectronics.

Although the library of 2D atomic crystals has greatly expanded over the past years, research into graphene is still one of the focuses for both academia and business communities. Due to its unique electronic structure, graphene offers a powerful platform for exploration of novel 2D physics, and has significantly impacted a wide range of fields including energy, electronics, and photonics. Moreover, the versatility of combining graphene with other functional components provides a powerful strategy to design artificial van der Waals (vdWs) heterostructures. Aside from the stacked 2D-2D vdWs heterostructure, in a broad sense graphene can hybridize with other non-2D materials through vdWs interactions. Such mixed-dimensional vdWs (MDWs) structures allow considerable freedom in material selection and help to harness the synergistic advantage of different dimensionalities, which may compensate for graphene's intrinsic shortcomings. A succinct overview of representative advances in graphene-based MDWs heterostructures is presented, ranging from assembly strategies to applications in optoelectronics. The scientific merit and application advantages of these hybrid structures are particularly emphasized. Moreover, considering possible breakthroughs in new physics and application potential on an industrial scale, the challenges and future prospects in this active research field are highlighted.

All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional van der Waals Heterostructure for Ultrasensitive Photodetector.

2D transition metal dichalcogenide (2D-TMD) materials and their van der Waals heterostructures (vdWHs) have inspired worldwide efforts in the fields of electronics and optoelectronics. However, photodetectors based on 2D/2D vdWHs suffer from performance limitations due to the weak optical absorption of their atomically thin nature. In this work, taking advantage of an excellent light absorption coefficient, low-temperature solution-processability, and long charge carrier diffusion length, all-inorganic halides perovskite CsPbI3- x Br x quantum dots are integrated with monolayer MoS2 for high-performance and low-cost photodetectors. A favorable energy band alignment facilitating interfacial photocarrier separation and efficient carrier injection into the MoS2 layer inside the 0D-2D mixed-dimensional vdWHs are confirmed by a series of optical characterizations. Owing to the synergistic effect of the photogating mechanism and the modulation of Schottky barriers, the corresponding phototransistor exhibits a high photoresponsivity of 7.7 × 104 A W-1, a specific detectivity of ≈5.6 × 1011 Jones, and an external quantum efficiency exceeding 107%. The demonstration of such 0D-2D mixed-dimensional heterostructures proposed here would open up a wide realm of opportunities for designing low-cost, flexible transparent, and high-performance optoelectronics.

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect.

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.