Secondary electron count imaging in SEM.

Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM image quality for a given imaging dose. SE count imaging, which uses the direct count of SEs detected from the sample instead of the average signal intensity, would overcome this limitation and lead to improvement in SEM image quality. In this paper, we implement an SE count imaging scheme by synchronously outcoupling the detector and beam scan signals from the microscope and using custom code to count detected SEs. We demonstrate a ∼30% increase in the image signal-to-noise-ratio due to SE counting compared to conventional imaging. The only external hardware requirement for this imaging scheme is an oscilloscope fast enough to accurately sample the detector signal for SE counting, making the scheme easily implementable on any SEM.

Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads.

In this work, we report the use of commercial gallium nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors. This was accomplished by taking advantage of the small form-factor, low-power dissipation, and high temperature compatibility of GaN field effect transistors (GaNFETs) to integrate pulsers directly into the loads to be switched, even under vacuum. This integration reduces parasitics to allow for faster switching and removes the requirement to impedance match the load to a transmission line by allowing for a lumped element approximation of the load even with subnanosecond switching. Depending on the chosen GaNFET and driver, these GaN pulsers are capable of generating pulses ranging from 100 to 650 V and 5 to 60 A in 0.25-8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by using a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. We test these circuits under vacuum and up to 120 °C to demonstrate their flexibility. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.

Electrostatic electron mirror in SEM for simultaneous imaging of top and bottom surfaces of a sample.

The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques such as low-energy electron microscopy has been established. However, in this work, by implementing an easy to construct, fully electrostatic electron mirror system under a sample in a conventional scanning electron microscope (SEM), we present a new imaging scheme which allows us to form scanned images of the top and bottom surfaces of the sample simultaneously. We believe that this imaging scheme could be of great value to the field of in-situ SEM which has been limited to observation of dynamic changes such as crack propagation and other surface phenomena on one side of samples at a time. We analyze the image properties when using a flat versus a concave electron mirror system and discuss two different regimes of operation. In addition to in-situ SEM, we foresee that our imaging scheme could open up avenues towards spherical aberration correction by the use of electron mirrors in SEMs without the need for complex beam separators.

Image-histogram-based secondary electron counting to evaluate detective quantum efficiency in SEM.

Scanning electron microscopy is a powerful tool for nanoscale imaging of organic and inorganic materials. An important metric for characterizing the limits of performance of these microscopes is the Detective Quantum Efficiency (DQE), which measures the fraction of emitted secondary electrons (SEs) that are detected by the SE detector. However, common techniques for measuring DQE approximate the SE emission process to be Poisson distributed, which can lead to incorrect DQE values. In this paper, we introduce a technique for measuring DQE in which we directly count the mean number of secondary electrons detected from a sample using image histograms. This technique does not assume Poisson distribution of SEs and makes it possible to accurately measure DQE for a wider range of imaging conditions. As a demonstration of our technique, we map the variation of DQE as a function of working distance in the microscope.

Imparting Superhydrophobicity with a Hierarchical Block Copolymer Coating.

A robust and transparent silica-like coating that imparts superhydrophobicity to a surface through its hierarchical multilevel self-assembled structure is demonstrated. This approach involves iterative steps of spin-coating, annealing, and etching of polystyrene-block-polydimethylsiloxane block copolymer thin films to form a tailored multilayer nanoscale topographic pattern with a water contact angle up to 155°. A model based on the hierarchical topography is developed to calculate the wetting angle and optimize the superhydrophobicity, in agreement with the experimental trends, and explaining superhydrophobicity arising through the combination of roughness at different lengthscales. Additionally, the mechanical robustness and optically passive properties of the resulting hydrophobic surfaces are demonstrated.