Emergent tetragonality in a fundamentally orthorhombic material.

Symmetry plays a key role in determining the physical properties of materials. By Neumann's principle, the properties of a material remain invariant under the symmetry operations of the space group to which the material belongs. Continuous phase transitions are associated with a spontaneous reduction in symmetry. Less common are examples where proximity to a continuous phase transition leads to an increase in symmetry. We find signatures of an emergent tetragonal symmetry close to a charge density wave (CDW) bicritical point in a fundamentally orthorhombic material, ErTe3, for which the two distinct CDW phase transitions are tuned via anisotropic strain. We first establish that tension along the a axis favors an abrupt rotation of the CDW wave vector from the c to a axis and infer the presence of a bicritical point where the two continuous phase transitions meet. We then observe a divergence of the nematic elastoresistivity approaching this putative bicritical point, indicating an emergent tetragonality in the critical behavior.

Light-Induced Currents at Domain Walls in Multiferroic BiFeO3.

Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.