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Opt Express
; 27(22): 32409-32426, 2019 Oct 28.
Article
in English
| MEDLINE
| ID: mdl-31684455
ABSTRACT
In this paper, we present the design, fabrication and characterization of a carrier depletion silicon-photonic switch based on a highly doped vertical pn junction. The vertical nature of the pn junction enables the device to exhibit a modulation efficiency as high as 0.23â V.cm. Fast switching times of 60ps are achieved in a lumped configuration. Moreover, the process flow is highly tolerant to fabrication deviations allowing a seamless transfer to the 350â nm process node of a commercial complementary-metal-oxide semiconductor (CMOS) foundry. Overall, this work showcases the possibility of fabricating highly efficient carrier depletion-based silicon photonic switches using medium resolution lithography.