Top-down synthesis and enhancing device adaptability of graphene quantum dots.

Quantum dots (QD) are rapidly making their way into several application sectors including optoelectronics, and there is a strong need to focus on non-toxic QDs. In this work, we have synthesized graphene QDs in the size range of 1.4-4.2 nm from inexpensive graphite by oxidative cleavage using a sulphuric and nitric acid mixture. A subsequent hydrogen peroxide oxidation step, investigated using two thermal budgets, has resulted in QDs with excellent photoluminescence (PL) intensity. Prolonged, higher temperature oxidation results in smaller size GQDs. X-ray photoelectron spectroscopy analysis confirmed the role of ·OH radicals in the oxidation process and Raman analysis revealed that the higher thermal budget oxidation results in lower defect density. To overcome the challenges in device adaptability due to the inherent acidity in the QDs, a post-synthesis neutralization process was devised. The neutralized GQDs were formed into a film to be used as the active layer in a photodetector device. Fluorescence decay analysis showed there is no significant change in lifetime because of the film formation process. The fabricated GQD photodetector device exhibited high photocurrent under ultraviolet illumination with an ON/OFF ratio of 400% at an applied bias of ±1 V. The device performance underlines the high potential for the non-toxic, top-down synthesized GQDs for application in optoelectronic devices.

Very High Brightness Quantum Dot Light-Emitting Devices via Enhanced Energy Transfer from a Phosphorescent Sensitizer.

We demonstrate very efficient and bright quantum dot light-emitting devices (QDLEDs) with the use of a phosphorescent sensitizer and a thermal annealing step. Utilizing CdSe/CdS core/shell quantum dots with 560 nm emission peak, bis(4,6-difluorophenylpyridinatoN,C2) picolinatoiridium as a sensitizer, and thermal annealing at 50 °C for 30 min, green-emitting QDLEDs with a maximum current efficiency of 23.9 cd/A, a power efficiency of 31 lm/W, and a brightness of 65,000 cd/m(2) are demonstrated. The high efficiency and brightness are attributed to annealing-induced enhancements in both the Forster resonance energy transfer (FRET) process from the phosphorescent energy donor to the QD acceptor and hole transport across the device. The FRET enhancement is attributed to annealing-induced diffusion of the phosphorescent material molecules from the sensitizer layer into the QD layer, which results in a shorter donor-acceptor distance. We also find, quite interestingly, that FRET to a QD acceptor is strongly influenced by the QD size, and is generally less efficient to QDs with larger sizes despite their narrower bandgaps.

Heterojunction silicon microwire solar cells.

We report radial heterojunction solar cells of amorphous silicon on crystalline silicon microwires with high surface passivation. While the shortened collection path is exploited to increase the photocurrent, proper choice of the wire radius and the highly passivated surface prevent drastic decrease in the voltage due to high surface-to-volume ratio. The heterojunction is formed by depositing a ∼12-16 nm of amorphous silicon on crystalline silicon wires of radius approximately equal to minority carrier diffusion length (∼10 µm). In spite of very short carrier lifetime (<1 µs), the microwire array devices generate photocurrent of ∼30 mA/cm(2), and the same time, voltages close to 600 mV are achieved, leading to efficiency in excess of 12% in extremely short carrier lifetime silicon. We also find that formation of nanocrystallites of silicon in the deposited film results in loss of the expected passivation.