ABSTRACT
The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contacts. However, Au metal contacts are quite expensive, are incompatible with the complementary metal oxide-semiconductor foundries, and also have poor thermal stability. Thus, seeking an alternative that is affordable and thermally stable is crucial. In the present study, we investigate Au-free Ohmic contact formation on p-type GaN using a bilayer Ni/Al-doped ZnO (AZO) thin film. Careful studies were focused on identifying the role of process parameters such as annealing parameters: temperature, time, and atmosphere in order to obtain an excellent Ohmic contact on p-GaN. Our results show that the contact resistance can be significantly reduced using a Ni/AZO bilayer with a suitable rapid thermal process. We demonstrate that the specific contact resistance for Ni/AZO on p-GaN can reach the lowest value of 1.85 × 10-4 Ω·cm2 for a sample with a 5 nm Ni layer annealed at 500 °C in air for 5 min. Our work demonstrates that the bilayer Ni/AZO contact could be suitable for efficient GaN power diodes or transistors.
ABSTRACT
Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.
ABSTRACT
In this study, different seed layers like gold (Au), zinc oxide (ZnO) and aluminum-doped ZnO (AZO) have been associated to ZnO nanowires (NWs) for the development of mechanical energy harvesters. ZnO NWs were grown by using a low temperature hydrothermal method. The morphological properties were investigated using Scanning Electron Microscopy (SEM) and the analysis of crystalline quality and growth orientation was studied using X-ray Diffraction (XRD). The obtained ZnO NWs are found to be highly dense, uniformly distributed and vertically well aligned on the ZnO and AZO seed layers, while ZnO NWs grown on Au possess a low density and follow a non-uniform distribution. Moreover, the NWs exhibited good crystal quality over the seed layers. The piezoelectric nanogenerator (PENG) consists of ZnO NWs grown on the three different seed layers, parylene-C matrix, Ti/Al top electrode and poly(dimethylsiloxane) (PDMS) encapsulated polymer composite. The measurements of the open circuit voltage (VOC) were around 272 mV, 36 mV for ZnO, AZO seed layers while the PENG including Au seed layer presented a short-circuited state. This study is an important step in order to investigate the effect of different seed layers influencing the magnitude of the generated electrical performances under identical growth and measurement conditions. It will also help identify the most suitable seed layers for energy harvesting devices and their future integration in industrial applications.
