ABSTRACT
Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe measurements. 2PG is isolated from other pump induced effects through the difference between measurements performed with parallel and perpendicular polarizations of pump and probe. An enhancement in the 2PG coefficient of nearly 2 orders of magnitude is reported. The results point a possible way toward two-photon semiconductor lasers.
ABSTRACT
Highly efficient second-harmonic generation can be achieved by harnessing resonance effects in microring resonator structures. We propose an angular quasi-phase-matching scheme based on the position dependence of polarization inside the ring resonator.
ABSTRACT
Using two-color optical coherence control techniques in intrinsic GaAs at 80 K with orthogonally polarized 70 fs, 1430 and 715 nm pulses, we generate a pure spin source current that yields a transverse Hall pure charge current; or alternatively, with parallel polarized pulses, we generate a pure charge source current that yields a pure spin current. By varying the relative phase or polarization of the incident pulses, one can effectively tune the type, magnitude and direction of both the source and transverse currents without application of electric or magnetic fields.
ABSTRACT
We describe a reflection scheme that allows Bragg-spaced semiconductor quantum wells to be used to trap, store, and release light. We study the temporal and spectral distortion of delayed light pulses and show that this geometry allows multibit delays and offers a high degree of distortion compensation.
ABSTRACT
We demonstrate all-optical quantum interference injection and control of a ballistic pure spin current (without an accompanying charge current) in GaAs/AlGaAs quantum wells, consisting of spin-up electrons traveling in one direction and spin-down electrons traveling in the opposite direction. This current is generated through quantum interference of one- and two-photon absorption of approximately 100 fs phase-locked pulses that have orthogonal linear polarizations. We use a spatially resolved pump-probe technique to measure carrier movement of approximately 10 nm. Results agree with recent theoretical predictions.
