Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments.

Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices. Transverse magnetic focusing is a potential technique to accomplish both those tasks. In a material where there is significant Rashba spin-orbit interaction, electrons of different spins will traverse different paths in the presence of an external magnetic field. Experiments have demonstrated the viability of this technique by measuring conductance spectra that indicate the separation of spin-up and spin-down electrons. However the effect that the geometry of the leads has on these measurements is not well understood. By simulating an InGaAs-based transverse magnetic focusing device, we show that the resolution of features in the conductance spectra is affected by the shape, separation and width of the leads. Furthermore, the number of subbands occupied by the electrons in the leads affects the ratio between the amplitudes of the spin-split peaks in the spectra. We simulated devices with random onsite potentials and observed that transverse magnetic focusing devices are sensitive to disorder. Ultimately we show that careful choice and characterisation of device geometry are crucial for correctly interpreting the results of transverse magnetic focusing experiments.

Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide.

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.