Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition.

Phototransistors have gained significant attention in diverse applications such as photodetectors, image sensors, and neuromorphic devices due to their ability to control electrical characteristics through photoresponse. The choice of photoactive materials in phototransistor research significantly impacts its development. In this study, we propose a novel device that emulates artificial synaptic behavior by leveraging the off-current of a phototransistor. We utilize a p-type organic semiconductor, dinaphtho[2,3-b:2',3'- f]thieno[3,2-b]thiophene (DNTT), as the channel material and dope it with the organic semiconductor 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) on the DNTT transistor. Under light illumination, the general DNTT transistor shows no change in off-current, except at 400 nm wavelength, whereas the TPBi-doped DNTT phototransistor exhibits increased off-current across all wavelength bands. Notably, DNTT phototransistors demonstrate broad photoresponse characteristics in the wavelength range of 400-1000 nm. We successfully simulate artificial synaptic behavior by differentiating the level of off-current and achieving a recognition rate of over 70% across all wavelength bands.

Cationic Iridium(III) Complexes with Benzothiophene-Quinoline Ligands for Deep-Red Light-Emitting Electrochemical Cells.

Three new cationic cyclometalated iridium(III) complexes equipped with differently substituted benzo[b]thiophen-2-ylquinoline cyclometalating ligands and with a sterically demanding tert-butyl-substituted 2,2'-bipyridine ancillary ligand were synthesized and structurally characterized by NMR and X-ray diffraction techniques. To tune the electronic properties of such complexes, the quinoline moiety of the cyclometalating ligands was kept pristine or equipped with electron-withdrawing phenyl and -CF3 substituents, leading to complexes 1, 2, and 3, respectively. A complete electrochemical and photophysical investigation, supported by density functional theory calculations, permits a deep understanding of their electronic properties. The emission of all complexes arises from ligand-centered triplet states in the spectral range between 625 and 950 nm, with excited-state lifetimes between 2.10 and 6.32 µs at 298 K. The unsubstituted complex (1) exhibits the most blue-shifted emission in polymeric matrix at 298 K (λmax = 667 nm, photoluminescence quantum yield (PLQY) = 0.25 and τ = 5.32 µs). The phenyl-substituted complex (2) displays the highest photoluminescent quantum yields (up to 0.30 in polymeric matrix), while the CF3-substituted counterpart (3) shows the most red-shifted emission, peaking at approx. 720 nm, but with lower quantum yields (e.g., 0.10 in polymeric matrix at 298 K). Complexes 1 and 2 were tested in single-layer nondoped light-emitting electrochemical cells (LEECs), using a nozzle-printing technique; both devices display deep-red electroluminescence with an external quantum efficiency close to 20%.

Printed Organic Light-Emitting Diodes on Fabric with Roll-to-Roll Sputtered ITO Anode and Poly(vinyl alcohol) Planarization Layer.

Electronic textiles, which are a combination of fabrics and electronics, can help realize wearable electronic devices by changing the rigidity of these textiles. We demonstrate organic light-emitting diodes (OLEDs) by directly printing the emitting material on fabric substrates using the nozzle-printing technique. Printing the emitting material directly on a fabric substrate with a rough surface is difficult. To address this, we introduce a planarization layer by using a synthesized 3.5 wt % poly(vinyl alcohol) (PVA) solution. The sputtered ITO anode with the thermally annealed PVA planarization layer on a fabric substrate achieves a low sheet resistance in the range of 60-80 Ω/sq, whereas the ITO electrode without a PVA layer exhibits high sheet resistance values of 10-25 kΩ/sq. This result is because the thermally annealed PVA layer on the fabric surface has a uniform surface morphology and a water contact angle as high as 96°, thus acting as a protective layer with a waterproofing effect; in contrast, the water is completely absorbed on the rough surface without a PVA layer. The fabric-based OLEDs with a thermally annealed PVA layer exhibit a lower turn-on voltage of 3 V and higher luminance values of 5346 cd/m2 at 8 V compared with the devices without a PVA layer (7 V and 3622 cd/m2) at 18 V. These fabric-based OLEDs with a PVA planarization layer can be produced by the nozzle-printing process and can achieve selective patterning as well as direct printing of the emitting material and ITO sputtering on a fabric substrate; furthermore, they emit well even when it bent into a circle with a radius of 1 cm.

High-Efficiency Diphenylpyrimidine Derivatives Blue Thermally Activated Delayed Fluorescence Organic Light-Emitting Diodes.

Organic light-emitting diodes with thermally activated delayed fluorescence emitter have been developed with highly twisted donor-acceptor configurations and color-pure blue emitters. Synthesized 4-(4-(4,6-diphenylpyrimidin-2-yl)phenyl)-10H-spiro[acridine-9,9'-fluorene] (4,6-PhPMAF) doped device with spiroacridine as a donor unit and diphenylpyrimidine as acceptor exhibits the device characteristics such as the luminescence, external quantum efficiencies, current efficiencies, and power efficiencies corresponding to 213 cd/m2, 2.95%, 3.27 cd/A, and 2.94 lm/W with Commission International de l'Eclairage (CIE) coordinates of (0.15, 0.11) in 4,6-PhPMAF-doped DPEPO emitter. The reported 10-(4-(2,6-diphenylpyrimidin-4-yl)phenyl)-10H-spiro[acridine-9,9'-fluorene] (2,6-PhPMAF) doped device exhibit high device performance with 1,445 cd/m2, 12.38%, 19.6 cd/A, and 15.4 lm/W, which might be originated from increased internal quantum efficiency by up-converted triplet excitons to the singlet state with relatively smaller ΔE ST of 0.17 eV and higher reverse intersystem crossing rate (k RISC) of 1.0 ×108/s in 2,6-PhPMAF than 0.27 eV and 3.9 ×107/s in 4,6-PhPMAF. Despite low performance of 4,6-PhPMAF doped device, synthesized 4,6-PhPMAF has better color purity as a deep-blue emission with y axis (0.11) than reported 2,6-PhPMAF with y axis (0.19) in CIE coordinate. The synthesized 4,6-PhPMAF has higher thermal stability of any transition up to 300°C and decomposition temperature with only 5% weight loss in 400°C than reported 2,6-PhPMAF. The maximum photoluminescence emission of 4,6-PhPMAF in various solvents appeared at 438 nm, which has blue shift about 20 nm than that of 2,6-PhPMAF, which contributes deep-blue emission in synthesized 4,6-PhPMAF.

Optimization of Super-Hydrophobic Property by Two-Step Surface Modification.

The super-hydrophobic surface can be used in anti-pollution, self-cleaning, and anti-corrosive properties. Two-step surface treatment process on Al-coated glass was conducted by surface etching using potassium hydroxide (KOH) and surface coating using lauric acid for super-hydrophobic surface. The KOH-etched Al surface (1st etching) was changed to a hydrophilic property with a water contact angle (WCA) of 68° to 48°. On the other hand, the WCA of the etched Al surface was changed to about 153° with super-hydrophobic property when the lauric acid coating (2nd coating) was applied on the KOH-etched Al surface for 30 minutes. We found that the hydrophobicity of Al surface was related to the roughness by surface modification as well as the Al film thickness by sputtering method.

Preparation and Characterization of the Sputtered TiAlN Coatings Using a Ti-Al Alloy Metal Target.

Titanium aluminium nitride (TiAlN) ternary coatings were deposited on glass substrates by means of reactive magnetron sputtering technique, using a Ti-Al alloy metal target (Ti0.5Al0.5). The depositions were performed at various N2 and Ar flux ratios of N2/(Ar + N2) ═ 33, 50, 67, 83%. The structure, morphology, chemical composition and mechanical properties were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDS), and nano indenter (MTS System), respectively. The orientation of coatings depends on the flux ratios of N2/(Ar + N2) and substrate temperature. The coatings deposited with N2/(Ar + N2) ratios of 33, 50 at.% consists of pyramid-like column grains separated by porous and voids, which can be attributed to cubic-TiN (220) preferred orientation. The coatings deposited with N2/(Ar + N2) greater than 67% exhibits the phase of hexagonal-AlN and cubic-TiN. The surface of coatings becomes more compact and smoother with the N2/(Ar + N2) ratios increase. The coatings deposited with N2/(Ar+N2) ratio of 83% shows the largest hardness of 21.5 GPa, which is attributed to the preferred (200) orientation. However, this hardness increases significantly with increasing substrate temperature. The coatings deposited at more than 100 °C exhibited the (111) and/or (200) orientation. The amounts of grains grown along the (111) and (200) orientations play a significant role on the mechanical performance of TiAlN coatings. Four independent mechanisms, such as TiAlN stoichiometry and lattice parameter, the (111) preferred growth orientation, and the density increases (elimination of void), were found to contribute to the enhancement of TiAlN mechanical performance.

Preferential Orientation of Tetrahedral Silicon-Based Hosts in Phosphorescent Organic Light-Emitting Diodes.

Vacuum-processed diphenylbis(3-(pyridine-2-yl)phenyl)silane (2PTPS), diphenylbis(3-(pyridine-3-yl)phenyl)silane (3PTPS), and diphenylbis(3-(pyridine-4-yl)phenyl)silane (4PTPS) have been used as electron-transporting host materials combined with tris(4-carbazoyl-9-ylphenyl)amine (TCTA) as the hole-transporting host, which induce balanced charge carrier transport for high-efficiency phosphorescent organic light-emitting diodes. The 4PTPS-based organic light-emitting diodes with tris[2-phenylpyridinato-C 2,N]iridium(III) [Ir(ppy)3] dopant showed highest current efficiency and external quantum efficiency of 53.54 cd/A and 15.61%, compared to 2PTPS (40.75 cd/A, 11.84%) and 3PTPS (29.35 cd/A, 8.54%). These results were attributed to the well-aligned structure with preferential horizontal orientation of the emitting material layer by the diffraction intensity distribution as a function of azimuthal angle in two-dimensional grazing incidence X-ray diffraction analysis. The molecular orientation of TCTA:4PTPS material with a narrow azimuthal intensity distribution had better priority to the horizontal direction than the other TCTA:2PTPS and TCTA:3PTPS materials, which is related to the charge transport as well as the device efficiency. We found that the preferential horizontal orientation of the co-host material with a balanced charge carrier was not affected by Ir(ppy)3 dopant with a homoleptic structure and bis-[2-(4,6-difluorophenyl)pyridinato-N,C 2](picolinato)iridium [Firpic] dopant with a heteroleptic structure in the co-host/dopant system.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.