SiGe quantum dot crystals with periods down to 35 nm.

By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.

Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.

Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.

Direct formation of ZnO nanostructures by chemical solution deposition and EUV exposure.

The development of effective methods for the fabrication of ZnO nanostructures is important for the use of this semiconductor material with interesting optical and electronic properties. Chemical solution deposition methods have been demonstrated for creating ZnO films and electron beam exposure of a precursor film, zinc naphthenate, has been shown to yield ZnO nanostructures. Here, we report on the fabrication of ZnO nanostructures with photon beam exposure of a precursor film in the extreme ultraviolet range followed by a high temperature anneal in air. Interference lithography at this wavelength (13.5 nm) led to the production of extremely smooth line/space and dot array type periodic nanostructures with sizes as small as 10 nm. ZnO films obtained through EUV exposure exhibit markedly improved PL spectra with a sharp emission line in the UV range and much suppressed green emission. Electron microscopy and x-ray diffraction measurements also show strong effects of the EUV exposure step in ZnO formation as a function of precursor film thickness, EUV exposure dose and anneal temperature. The use of energetic photons for direct formation of ZnO nanostructures is found to be a method that warrants more investigation for the fabrication of patterned ZnO films with controlled properties.

Electric and magnetic resonances in arrays of coupled gold nanoparticle in-tandem pairs.

We present an experimental and theoretical study on the optical properties of arrays of gold nanoparticle in-tandem pairs (nanosandwiches). The well-ordered Au pairs with diameters down to 35 nm and separation distances down to 10 nm were fabricated using extreme ultraviolet (EUV) interference lithography. The strong near-field coupling of the nanoparticles leads to electric and magnetic resonances, which can be well reproduced by Finite-Difference Time-Domain (FDTD) calculations. The influence of the structural parameters, such as nanoparticle diameter and separation distance, on the hybridized modes is investigated. The energy and lifetimes of these modes are studied, providing valuable physical insight for the design of novel plasmonic structures and metamaterials.