Growth of multiple WS2/SnS layered semiconductor heterojunctions.

Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers of each of these materials using atomic layer deposition on 5 cm × 5 cm substrates. Initially, WS2 and SnS films were grown and characterized separately. Back-gated transistors of WS2 displayed n-type behavior with an effective mobility of 12 cm(2) V(-1) s(-1), whereas SnS transistors showed a p-type conductivity with a hole mobility of 818 cm(2) V(-1) s(-1). All mobility measurements were performed at room temperature. As expected, the heterostructure displayed an ambipolar behavior with a slightly higher electron mobility than that of WS2 transistors, but with a significantly reduced hole mobility. The reason for this drop can be explained with transmission electron micrographs that show the striation direction of the SnS layers is perpendicular to that of the WS2 with a 15 degree twist, hence the holes have to pass through van der Waals layers that results in drop of their mobility.

Nanoparticle-enhanced sensitivity of a nanogap-interdigitated electrode array impedimetric biosensor.

Interdigitated electrode (IDE) arrays with nanometer-scale gaps have been utilized to enhance the sensitivity of affinity-based detection. The geometry of nanogap IDEs was first optimized on the basis of simulations of the electric field and current density. It was determined that the gap (G) between the electrodes was the most important geometric parameter in determining the distribution and strength of the electric field and the current density compared to the width (W) and height (H) of the IDEs. Several devices were materialized and analyzed for their sensitivity to the electrochemical environment using faradic electrochemical impedance spectroscopy (EIS) as the detection technique. Nanogap optimized IDEs were then employed as biosensors for the label-free, affinity-based detection of antitissue transglutaminase antibodies (αtTG-Abs), a biomarker for the detection of autoimmune disorder celiac sprue, triggered by ingesting gluten. The label-free biosensor assay was found to be less sensitive compared to on-chip ELISA. Gold nanoparticles (GNPs) were then employed to improve the sensitivity of the nanogap IDE-based biosensor. With GNPs, the transducer sensitivity increased by 350% over that of label-free detection. The suitability of nanogap IDEs as biosensor transducers for EIS in label-free and GNP-labeled formats was established. The immunobiosensor assay detection sensitivity with the GNPs was found comparable to ELISA.

Electronic properties of metal-arene functionalized graphene.

We have employed first-principles density-functional calculations to study the electronic characteristics of covalently functionalized graphene by metal-bis-arene chemistry. It is shown that functionalization with M-bis-arene (M = Ti, V, Cr, Mn, Fe) molecules leads to an opening in the bandgap of graphene (up to 0.81 eV for the Cr derivative), and as a result, transforms it from a semimetal to a semiconductor. The bandgap induced by attachment of a metal atom topped by a benzene ring is attributed to modification of π-conjugation and depends on the concentration of functionalizing molecules. This approach offers a means of tailoring the band structure of graphene and potentially its applications for future electronic devices.

Electrical properties of covalently immobilized single-layer graphene devices.

Arrays of covalently immobilized and aligned graphene ribbons have been successfully prepared on silicon wafers. The effect of covalent modification on the electrical properties of the single-layer graphene was investigated. The effective electron field mobility of the constructed FETs, measured at 2700 cm2V(-1) s(-1), was higher than that for graphene film directly deposited on SiO2, possibly due to lower phonon scattering from the substrate surface, implying that the field effect mobilities may be enhanced with proper choice of substrates. The contact resistance between Cr electrodes and the single-layer graphene ribbon was determined to be 1.62 komega from the TLM structures.

3D nanogap interdigitated electrode array biosensors.

Three-dimensional interdigitated electrodes (IDEs) have been investigated as sensing elements for biosensors. Electric field and current density were simulated in the vicinity of these electrodes as a function of the electrode width, gap, and height to determine the optimum geometry. Both the height and the gap between the electrodes were found to have significant effect on the magnitude and distribution of the electric field and current density near the electrode surface, while the width of the electrodes was found to have a smaller effect on field strength and current density. IDEs were fabricated based on these simulations and their performance tested by detecting C-reactive protein (CRP), a stress-related protein and an important biomarker for inflammation, cardiovascular disease risk indicator, and postsurgical recuperation. CRP-specific antibodies were immobilized on the electrode surface and the formation of an immunocomplex (IC) with CRP was monitored. Electrochemical impedance spectroscopy (EIS) was employed as the detection technique. EIS data at various concentrations (1 pg/mL to 10 microg/mL) of CRP spiked in buffer or diluted human serum was collected and fitted into an equivalent electrical circuit model. Change in resistance was found to be the parameter most sensitive to change in CRP concentration. The sensor response was linear from 0.1 ng/mL to 1 microg/mL in both buffer and 5% human serum samples. The CRP samples were validated using a commercially available ELISA for CRP detection. Hence, the viability of IDEs and EIS for the detection of serum biomarkers was established without using labeled or probe molecules.

A simple and scalable route to wafer-size patterned graphene.

Producing large-scale graphene films with controllable patterns is an essential component of graphene-based nanodevice fabrication. Current methods of graphene pattern preparation involve either high cost, low throughput patterning processes or sophisticated instruments, hindering their large-scale fabrication and practical applications. We report a simple, effective, and reproducible approach for patterning graphene films with controllable feature sizes and shapes. The patterns were generated using a versatile photocoupling chemistry. Features from micrometres to centimetres were fabricated using a conventional photolithography process. This method is simple, general, and applicable to a wide range of substrates including silicon wafers, glass slides, and metal films.

Electrical detection of the temperature induced melting transition of a DNA hairpin covalently attached to gold interdigitated microelectrodes.

The temperature induced melting transition of a self-complementary DNA strand covalently attached at the 5' end to the surface of a gold interdigitated microelectrode (GIME) was monitored in a novel, label-free, manner. The structural state of the hairpin was assessed by measuring four different electronic properties of the GIME (capacitance, impedance, dissipation factor and phase angle) as a function of temperature from 25 degrees C to 80 degrees C. Consistent changes in all four electronic properties of the GIME were observed over this temperature range, and attributed to the transition of the attached single-stranded DNA (ssDNA) from an intramolecular, folded hairpin structure to a melted ssDNA. The melting curve of the self-complementary single strand was also measured in solution using differential scanning calorimetry (DSC) and UV absorbance spectroscopy. Temperature dependent electronic measurements on the surface and absorbance versus temperature values measured in solution experiments were analyzed assuming a two-state process. The model analysis provided estimates of the thermodynamic transition parameters of the hairpin on the surface. Two-state analyses of optical melting data and DSC measurements provided evaluations of the thermodynamic transition parameters of the hairpin in solution. Comparison of surface and solution measurements provided quantitative evaluation of the effect of the surface on the thermodynamics of the melting transition of the DNA hairpin.

Current rectification in a single silicon nanowire p-n junction.

Diodes within individual silicon nanowires were fabricated by doping them during growth to produce p-n junctions. Electron beam lithography was then employed to contact p- and n-doped ends of these nanowires. The current-voltage (I-V) measurements showed diode-like characteristics with a typical threshold voltage (Vt) of about 1 V and an ideality factor (n) of about 3.6 in the quasi-neutral region. The reverse bias I-V measurement showed an exponential behavior, indicating tunneling as the current leakage mechanism.

SiGe nanowire field effect transistors.

Si0.5Geo0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V(-1)s(-1). Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V(-1)s(-1).

SiGe nanowire growth and characterization.

Single-crystal SiGe nanowires were synthesized via the vapour-liquid-solid (VLS) growth mechanism using disilane and germane as precursor gases. We have investigated the effect of temperature, pressure, and the inlet gas ratio on the growth and stoichiometry of Si(x)Ge(1-x) nanowires. The nanowires were characterized using scanning and transmission electron microscopies and energy dispersive x-ray analysis. It was found that nanowires with a Si:Ge ratio of about 1 had smooth surfaces, whereas departure from this ratio led to rough surfaces. Electrical properties were then investigated by fabricating back-gated field effect transistors (using a focused ion beam system) where single SiGe nanowires served as the conduction channels. Gated conduction was observed although resistance in the undoped devices was high.

Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects.

We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires were aligned between the electrodes. Several alignment mechanisms, including the induced charge layer on the electrode surface, nanowire dipole-dipole interactions, and an enhanced local electrical field surrounding the aligned nanowires are proposed to explain these novel dielectrophoretic phenomena of one-dimensional nanostructures. This study demonstrates the promising potential of dielectrophoresis for constructing nanoscale interconnects using metallic nanowires as building blocks.