1.
Phys Rev Lett
; 108(22): 226402, 2012 Jun 01.
Article
in English
| MEDLINE
| ID: mdl-23003631
ABSTRACT
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies (V(Si)) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 µs. Two opposite schemes of the optical alignment of the populations between the ground-state spin sublevels of the silicon vacancy upon illumination with unpolarized light are realized in 4H- and 6H-SiC at room temperature. These altogether make the silicon vacancy in SiC a very favorable defect for spintronics, quantum information processing, and magnetometry.
2.
Small
; 7(11): 1533-7, 2011 Jun 06.
Article
in English
| MEDLINE
| ID: mdl-21520495